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Groove type IGBT device capable of reducing Miller capacitance

A Miller capacitor, trench type technology, applied in electrical components, semiconductor devices, circuits, etc., can solve the problems of high product cost, complex manufacturing process and structure, etc., to improve turn-on speed, reduce Miller capacitance Cgc, improve Pressure-resistant effect

Active Publication Date: 2019-10-25
JIANGSU CAS IGBT TECHNOLOGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, the manufacturing process and structure of the two groove depths are complicated, and the product cost is high

Method used

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  • Groove type IGBT device capable of reducing Miller capacitance
  • Groove type IGBT device capable of reducing Miller capacitance
  • Groove type IGBT device capable of reducing Miller capacitance

Examples

Experimental program
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Embodiment Construction

[0023] The present invention will be further described below in conjunction with specific drawings and embodiments.

[0024] Such as figure 1 Shown: In order to reduce the Miller capacitance of the device, increase the turn-on speed of the device, and reduce the turn-on loss of the device without affecting the withstand voltage, conduction voltage drop and short-circuit characteristics of the IGBT device, the N-type IGBT device is used as For example, the present invention includes a semiconductor substrate having an N conductivity type and a cell area arranged in the central area of ​​the semiconductor substrate, the cells in the cell area adopt a trench structure, and the cell trench 17 is located in the semiconductor substrate;

[0025] On the cross-section of the IGBT device, the cell in the cell region includes two adjacent cell trenches 16 and a floating P region 10 that is adapted to connect with the cell trench 17, and the bottom of the floating P region 10 Located below th...

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Abstract

The invention relates to a groove type IGBT device capable of reducing Miller capacitance. The carrier concentration in the emitter side of an IGBT can be improved via a floated second conductive typearea, the junction depth of the floated second conductive type area is greater than the depth of a cellular groove, the floated second conductive type area wraps part of the bottom of the cellular groove to reduce the electric field in the corners of the cellular groove, and further withstand voltage of the IGBT device is improved. The floated second conductive type area is internally provided with one or multiple floated area grooves, the depth of each floated area groove is lower than the junction depth of the floated second conductive type area, the width of the floated area groove is notlower than that fo the cellular groove, and polycrystalline silicon in the floated area groove makes ohmic contact with metal of the emitter so as to shield voltage change of the cellular gate polycrystalline silicon and effectively reduce the Miller capacitance Cgc. Further, switching on is rapider, and the ON loss is reduced.

Description

Technical field [0001] The present invention relates to a trench IGBT device, in particular to a trench IGBT device capable of reducing Miller capacitance, and belongs to the technical field of trench IGBT devices. Background technique [0002] Insulated gate bipolar transistor (IGBT) is a new type of power electronic device that combines MOS field effect and bipolar transistor. It not only has the advantages of large MOSFET input resistance, easy drive, and simple control; it also has the advantages of reduced conduction voltage of bipolar transistors and large conduction current. It has become one of the core components in modern power electronic circuits and is widely used in transportation, energy, industry, household appliances and other fields. [0003] Since the invention of IGBT, people have been committed to improving the characteristics of IGBT. At present, Infineon's commercial IGBT has developed to the seventh generation, from the original PT type to the NPT type, and ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/739H01L29/06H01L29/423
CPCH01L29/7397H01L29/0696H01L29/0619H01L29/4236
Inventor 陈钱许生根张金平姜梅
Owner JIANGSU CAS IGBT TECHNOLOGY CO LTD
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