Low dielectric constant polyimide film and preparation method thereof

Abstract

The invention discloses a low dielectric constant polyimide film and a preparation method thereof. The preparation method comprises: taking a certain amount of aluminum acetylacetonate, uniformly dispersing in a synthesized polyamic acid solution, paving by using the obtained composite resin solution to form a film, and carrying out thermal imidization to prepare the low dielectric constant polyimide film. Compared with the prior art, the method of the present invention has the following characteristics that aluminum acetylacetonate is used as the pore-forming agent, and can be sublimated andvolatilized during the thermal imidization of polyimide, such that the holes are left in the polyimide matrix, and the hole forming process is simple, easy-performing, safe and environmentally friendly; and the prepared low dielectric constant polyimide film has characteristics of uniform air hole distribution, low dielectric constant and good mechanical property, and has good application prospects in the fields of electronics, microelectronics, and the like.

Description

technical field [0001] The invention relates to the technical field of polyimide materials, in particular to a low dielectric constant polyimide film and a preparation method thereof. Background technique [0002] Polyimide (PI) is the most important product among aromatic heterocyclic polymers. It has excellent comprehensive properties such as high temperature resistance, high mechanical strength, chemical stability, and good dimensional stability. It is widely used in aerospace, electrical, microelectronics and other industries. be widely used. With the rapid development of the electronics and microelectronics industry, the integration of electronic components is getting higher and higher, requiring the dielectric to have a lower dielectric constant. Polyimide is widely used in the microelectronics industry. However, the dielectric constant of ordinary imide is 3.2-3.9, which is difficult to meet the needs of future microelectronics technology development. Therefore, the...

AI Technical Summary

Problems solved by technology

[0003] In the prior art, there are generally two ways to prepare low dielectric constant PI: the first method is to reduce the polarizability of molecules, that is, to reduce the polarity of PI itself, such as using fluorine-containing diamine or dianhydride monomers to synthesize fluorine-containing PI However, the synthesis process of fluorine-containing polyimide is complex, the choice of raw materials is small, the cost is high, and it is not suitable for large-scale production and use; the second method is to reduce the number of polarized molecules per unit volume of the material , that is, to reduce the density of PI itself, such as increasing the free volume of PI molecules or introducing air inside the material

The preparation of porous polyimide is mainly to introduce degradable components to generate holes, or to add hybrid materials containing nano-micropores, or to add pore-forming agents to prepare composite materials, and then use chemical reaction or extraction to dissolve the pore-forming agents. Remove pores, but they either have high production costs or complicated processes, and organic acids such as hydrochloric acid and sulfuric acid or organic solvents are required to remove pore-forming substances, which will pollute the environment

Images