Low-cost preparation method of titanium silicon alloy target material

A titanium-silicon alloy, low-cost technology, applied in metal material coating process, ion implantation plating, coating, etc., can solve problems such as uneven structure, composition segregation, high cost, etc., to improve composition uniformity and metallurgical The effect of uniform quality, structure and composition, low yield and low cost

Active Publication Date: 2019-09-20
上海交通大学包头材料研究院 +1
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0005] According to literature reports, conventional smelting methods for titanium-silicon targets have problems such as alloy brittleness, composition segregation, and uneven structure, and the silicon content is generally lower than 15% (mass ratio), and the ingot with a silicon content greater than 15% is prone to Cracking phenomenon, while the silicon content is less than 15%, prone to composition segregation or brittle cracks
CN102699325A and CN102321833A respectively provide a method for preparing titanium-silicon or titanium-aluminum-silicon targets by hot pressing and sintering. Preparation and wide application, unable to meet the requirements of tools and molds for the use of coating layers

Method used

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  • Low-cost preparation method of titanium silicon alloy target material
  • Low-cost preparation method of titanium silicon alloy target material
  • Low-cost preparation method of titanium silicon alloy target material

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] The titanium-silicon alloy target of the present invention is made of raw materials with the following mass fractions: sponge titanium 93.5%, crystalline silicon 6.5%;

[0040] The purity of the sponge titanium is ≥99.6%, and the purity of the crystalline silicon is ≥99.68%.

[0041] The preparation method of the titanium-silicon alloy target of this embodiment includes the following steps:

[0042] (1) Mixing: the sponge titanium (particle size is 1mm) and crystalline silicon (particle size size is 2mm) are uniformly mixed with a three-dimensional mixer, and the mixing time is 5min;

[0043] (2) Electrode pressing: Use a 630-ton hydraulic press to press the evenly mixed raw materials into electrode rods with a diameter of 35×45×380mm, each electrode rod is 2.5kg; keep the temperature in a 90°C oven for 3.5h.

[0044] (3) One-time consumable smelting: use a argon arc welding machine in a protective atmosphere to weld an appropriate number of electrode rods in step (2) ...

Embodiment 2

[0050] The titanium-silicon alloy target of the present invention is made of the following raw materials in atomic percentage: 87.5% of titanium sponge and 12.5% ​​of crystalline silicon;

[0051] The purity of the sponge titanium is ≥99.6%, and the purity of the crystalline silicon is ≥99.68%.

[0052] The preparation method of the titanium-silicon alloy target of this embodiment includes the following steps:

[0053] (1) Mixing: the titanium sponge (particle size is 10mm) and the crystalline silicon (the size is 6mm) are uniformly mixed with a three-dimensional mixer, and the mixing time is 8min;

[0054] (2) Electrode pressing: Use a 630-ton hydraulic press to press the evenly mixed raw materials into electrode rods with a diameter of 35 × 50 × 380 mm, each electrode rod is 2.8 kg; keep the temperature in a 100 ℃ oven for 4 hours.

[0055] (3) One-time consumable smelting: use a argon arc welding machine in a protective atmosphere to weld an appropriate number of electrode...

Embodiment 3

[0061] The titanium-silicon alloy target of the present invention is made of the following raw materials in atomic percentage: 80% of titanium sponge and 20% of crystalline silicon;

[0062] The purity of the sponge titanium is ≥99.6%, and the purity of the crystalline silicon is ≥99.68%.

[0063] The preparation method of the titanium-silicon alloy target of this embodiment includes the following steps:

[0064] (1) Mixing: the sponge titanium (particle size is 8mm) and crystalline silicon (size is 6mm) are uniformly mixed with a three-dimensional mixer, and the mixing time is 10min;

[0065] (2) Electrode pressing: Use a 630-ton hydraulic press to press the evenly mixed raw materials into electrode rods with a diameter of 35×60×380mm, each electrode rod is 4.5kg; keep the temperature in a 110°C oven for 6h.

[0066] (3) One-time consumable smelting: use a argon arc welding machine in a protective atmosphere to weld an appropriate number of electrode rods in step (2) in an e...

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Abstract

The invention provides a low-cost preparation method of a titanium silicon alloy target material. The low-cost preparation method of the titanium silicon alloy target material comprises the following steps of A, mixing: uniformly mixing sponge titanium and crystal silicon according to the proportion; B, pressing an electrode: pressing the mixed raw material into an electrode rod, and heating the electrode rod; C, carrying out self-consumption smelting for the first time: under a protective atmosphere, welding the heated electrode, then carrying out vacuum self-consumption smelting for the first time, and obtaining a primary ingot of titanium silicon alloy; D, welding: after flattening two ends of the primary ingot of the titanium silicon alloy, combining and welding the primary ingot of the titanium silicon alloy by utilizing a vacuum electron beam welding technology, and obtaining an electrode material; E, carrying out self-consumption smelting for the second time: carrying out vacuum self-consumption smelting on the electrode material for the second time, and obtaining a secondary ingot of the titanium silicon alloy; and F, processing the secondary ingot of the titanium silicon alloy, and obtaining the final titanium silicon target material. The titanium silicon target material prepared by the method provided by the invention has a compact structure, and is uniform and fine, high in raw material production rate, low in cost, and suitable for engineering mass production.

Description

technical field [0001] The invention relates to the technical field of preparation technology of a target for material surface modification coating, in particular to a low-cost preparation method of a titanium-silicon alloy target. Background technique [0002] With the rapid development of the electronic information industry and the improvement of social awareness of environmental protection, the application of thin film science has become increasingly widespread, and the surface coating process of materials has also developed from traditional electroplating and chemical plating to vacuum sputtering coating technology. Vacuum sputtering has become one of the main technologies for preparing thin-film materials, and has been widely used in coating fields such as hardware decoration, electronic products, automobiles and construction. Therefore, the demand for coated targets in the above fields is increasingly urgent, and higher and higher requirements are also placed on the ta...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C22C1/02C22C14/00
CPCC22C1/02C22C14/00C23C14/3414
Inventor 毛建伟吕维洁韩远飞黄光法
Owner 上海交通大学包头材料研究院
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