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Based on cspbbr 3 Molecularly imprinted photoelectrochemical sensor with /go homotype heterostructure and its preparation method and application

A molecular imprinting and heterostructure technology, applied in the fields of electrochemical variables of materials, scientific instruments, instruments, etc., can solve the problems such as the inability to meet the needs of optoelectronic devices, and achieve the effect of reuse, good application prospects, and improved selectivity.

Active Publication Date: 2021-06-15
HUBEI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the coating of materials can effectively improve the luminescence stability of perovskite quantum dots in water, it still cannot meet the needs of practical applications of optoelectronic devices.

Method used

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  • Based on cspbbr <sub>3</sub> Molecularly imprinted photoelectrochemical sensor with /go homotype heterostructure and its preparation method and application
  • Based on cspbbr <sub>3</sub> Molecularly imprinted photoelectrochemical sensor with /go homotype heterostructure and its preparation method and application
  • Based on cspbbr <sub>3</sub> Molecularly imprinted photoelectrochemical sensor with /go homotype heterostructure and its preparation method and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0049] Example 1CsPbBr 3 and CsPbBr 3 / GO preparation, the preparation process is as follows:

[0050] CsPbBr used in the present invention 3 Is referring to Li Zhichun et al in the literature (Highly Luminescentand Ultrastable CsPbBr 3 The method reported in Perovskite Quantum Dots Incorporated into a Silica / Alumina Monolith, Li Zhichun et al, Angewandte Chemie International Edition, 2017, 129, 8246-8250) and slightly modified. First, 10 mmol of cesium carbonate, 20 mL of 1-octadecene and 20 mL of oleic acid were added to a round-bottomed flask, vacuumed at 120 °C for 05 to 1 hour, and then the reaction temperature was raised to 150 °C or less under argon flow. An optically transparent solution is formed, and after reflux for 0.5 to 1 hour, the solution is cooled to obtain the precursor CsOA. Then 20 mL of 1-octadecene, 5 mL of oleylamine, 5 mL of oleic acid and 2 mmol of lead bromide were added to the three-necked flask, and vacuumized at 120 ° C for 0.5 to 1 hour; The ...

Embodiment 2

[0051] Example 2 Preparation of molecularly imprinted photoelectrochemical sensor, the preparation process is as follows:

[0052] The molecularly imprinted polymer film used in the present invention refers to Mao Lebao et al. in the literature (Molecularly imprinted photoelectrochemical sensor for fumonisin B 1 Based on the method in GO-CdSheterojunction, Mao Lebao et al, Biosens. Bioelectron. 2019, 127, 57-63). First take 20 μL of the CsPbBr prepared in Example 1 3 The / GO solution was drop-coated on a clean conductive glass (ITO) electrode, and placed in the air to dry; then 20 μL of PMMA was added dropwise and dried in the air to obtain a modified electrode. Next, drop 20 μL of AFB containing the original concentration of 20mg / ml on the modified electrode 1 Template molecule, functional monomer methacrylic acid (MAA), cross-linking agent of ethylene glycol dimethacrylate (EDMA) and polymerization solution of initiator azobisisobutyronitrile (AIBN), in which AFB 1 Templa...

Embodiment 3

[0053] Example 3 Molecularly imprinted photoelectrochemical sensor to AFB 1 Specific detection, the detection process is as follows:

[0054] Add different toxins, such as Fumonisin B, to the rice extract prepared for the sensor prepared in Example 2 1 (FB 1 ), Deoxynivalenol (DON), Ochratoxin A (OTA), Ochratoxin B (OTB), Patulin (PAT), Zearalenone (ZON), Patulin (PAT) and Aflatoxin B1 (AFB 1 ) and contains AFB 1 Incubated with a mixture of all the above toxins, the results are as follows image 3 As shown, the concentration of interfering substances is 10ng / mL, AFB 1 Concentration is 1ng / mL, it can be seen that the interfering substances have no effect on the signal acquisition of the sensor, while adding AFB 1 Afterwards, the current changed significantly and was consistent with the sensor signal of the mixture culture, showing that the sensor was sensitive to AFB 1 There are good options.

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Abstract

The invention discloses a perovskite quantum dot (CsPbBr 3 ) and graphene oxide (GO) homoheterostructure molecularly imprinted sensor and its application to aflatoxin B 1 (AFB 1 ) detection. The present invention uses CsPbBr 3 The molecularly imprinted photoelectrochemical sensor was successfully prepared by wrapping or supporting the folds of graphene oxide to construct a homogeneous heterostructure, using polymethyl methacrylate (PMMA) as a hydrophobic layer, and combining molecularly imprinted technology. The sensor prepared by the present invention uses CsPbBr 3 The homoheterojunction formed with GO is used as the photoelectric conversion layer, polymethyl methacrylate is used as the protective layer, and the AFB is realized by surface modification of the molecularly imprinted membrane containing toxin recognition sites 1 detection. The sensor has a wide detection range, good selectivity, high sensitivity, and a detection limit as high as 0.74pg·mL ‑1 ; At the same time, the response is stable and has good reproducibility.

Description

technical field [0001] The invention relates to the technical fields of photoelectrochemical analysis, environmental monitoring and sensing, in particular to a molecularly imprinted photoelectrochemical sensor based on perovskite quantum dots and graphene oxide homoheterostructure, in particular to a CsPbBr-based 3 Molecularly imprinted photoelectrochemical sensor with / GO homoheterostructure and its preparation method and aflatoxin B 1 (AFB 1 ) detection applications. Background technique [0002] Inorganic CsPbX 3 (X=I, Br, Cl) perovskite quantum dots (PQDs) have the characteristics of high photoluminescence quantum yield, narrow half-peak width, tunable broad emission spectrum and short radiative lifetime, so as a novel optoelectronic material , they can be used in light-emitting diodes, lasers, photodetection and backlight displays, solar cells and other fields. However, due to the inability of perovskite quantum dots to exist stably in water, its practical applicati...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N27/26G01N27/36G01N27/327G01N27/30
CPCG01N27/26G01N27/30G01N27/327G01N27/3275G01N27/36
Inventor 毛乐宝张修华文为何汉平王升富
Owner HUBEI UNIV
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