Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method of producing semiconductor epitaxial wafer

Active Publication Date: 2019-09-10
SUMCO CORP
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Furthermore, Patent Document 1 discloses that by implanting cluster ions containing three elements, carbon, hydrogen, and oxygen, large-sized black dot-like defects presumably originating from interstitial silicon are formed (Patent Document 1 The second black dot defect)

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method of producing semiconductor epitaxial wafer
  • Method of producing semiconductor epitaxial wafer
  • Method of producing semiconductor epitaxial wafer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0085] (trial example 1)

[0086] A silicon wafer (diameter: 300 mm, thickness: 725 μm, dopant type: phosphorus, resistivity: 10 Ω·cm) obtained from a CZ single crystal silicon ingot was prepared. Next, using a cluster ion generator (manufactured by NISSIN ION EQUIPMENT CO., LTD., model: CLARIS (registered trademark)), the surface of the silicon wafer was irradiated with diethyl ether (C 4 h 10 O) cluster ionized by CH 3 Multi-element cluster ions composed of O. In addition, the dose of the cluster ion was set to 1.0×10 15 Cluster / cm 2 (The carbon dose is also 1.0×10 15 atoms / cm 2 ).

[0087] Next, the above-mentioned silicon wafer was transferred to a monolithic epitaxial growth apparatus (manufactured by APPLIED MATERIALS, INC.) at a furnace temperature of 600°C. Next, the heating time up to 800° C. is set to 5 seconds (the heating rate is 40° C. / s), and the heating time from 800° C. to 1000° C. is set to 5 seconds (the heating rate is 40° C. / s). Raise the temperat...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
thicknessaaaaaaaaaa
electrical resistivityaaaaaaaaaa
Login to View More

Abstract

Provided is a method for manufacturing a semiconductor epitaxial wafer, which can have a higher gettering capability even if the conditions for cluster ion implantation are the same. A method for manufacturing a semiconductor epitaxial wafer according to the present invention includes: a first step of implanting multi-element cluster ions containing 3 elements of carbon, hydrogen, and oxygen as constituent elements into a surface of a semiconductor wafer to form a modified layer in which the constituent elements of the multi-element cluster ions are dissolved in a surface layer portion of thesemiconductor wafer; a second step of performing a defect formation heat treatment for increasing a defect density of the black-dot defects formed in the modified layer after the first step; and a third step of forming an epitaxial layer on the modified layer of the semiconductor wafer after the second step.

Description

technical field [0001] The invention relates to a method for manufacturing a semiconductor epitaxial wafer. In particular, the present invention relates to a method of manufacturing a semiconductor epitaxial wafer exhibiting a higher gettering capability. Background technique [0002] Metal contamination can be cited as a factor that degrades the characteristics of semiconductor devices. For example, in a back-illuminated solid-state imaging element, metal mixed into a semiconductor epitaxial wafer serving as the element substrate becomes a main cause of an increase in the dark current of the solid-state imaging element, and a defect called a white spot defect (white defect) occurs. defect. The back-illuminated solid-state imaging device is used in recent years because the wiring layer and the like are arranged on the lower layer of the sensor part, and the light from the outside is directly taken into the sensor, and even in a dark place, etc., it is possible to capture a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L21/265H01L21/322
CPCH01L21/02381H01L21/02439H01L21/02532H01L21/26566H01L21/3221H01L21/02293H01L21/324H01L27/146
Inventor 广濑谅
Owner SUMCO CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com