Visual directional growth device and growth method for large-size bromine-lead-cesium single crystal
A technology of crystal growth and directional growth, which is applied in the directions of single crystal growth, single crystal growth, and crystal growth. Quality and optical transmittance, easy to observe the crystal growth status, good effect of crystal transparency
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Embodiment 1
[0050] One for large size CsPbBr 3 A device for visual directional growth of single crystals, with a structure such as figure 1 As shown, it includes a body of furnace and a rotary descending system. The body of furnace includes a quartz furnace tube 4 and a heating device. The cavity in the quartz furnace tube is a crystal growth chamber, and the heating device is arranged outside the quartz furnace tube 4. The outer jacket of the heating device is provided with an insulating sleeve 6, the insulating sleeve 6 is a transparent quartz tube, the inner wall of the transparent quartz tube is coated with a gold layer, and the insulating sleeve is close to the heating device; the wall thickness of the transparent quartz tube is 2 mm to 5 mm; The translucent insulation sleeve is convenient for observing the growth status in the furnace during the crystal growth process; at the same time, the gold layer can reflect the heat generated by the heater to the center of the furnace body to ...
Embodiment 2
[0054] One for large size CsPbBr 3 The visual directional growth device of a single crystal is the same as that in Example 1, except that the length of the seed crystal bag is 20mm and the inner diameter is 6mm; the angle of the funnel-shaped shoulder area is 60°; the inner diameter of the equal-diameter area determines the growth of the crystal. outside diameter.
Embodiment 3
[0056] A kind of utilizing the device of embodiment 1 to grow large size CsPbBr 3 The method for a single crystal comprises the following steps:
[0057] Step 1: Cleaning the Crystal Growth Crucible
[0058] (a) Preliminary rinsing of the quartz crucible is carried out with deionized water;
[0059] (b) immerse the rinsed quartz crucible in a hydrofluoric acid solution with a concentration of 10% for 1 hour, and then rinse the quartz crucible soaked in hydrofluoric acid with deionized water;
[0060] (c) Soak the washed quartz crucible with absolute ethanol and ultrasonically for 2 hours, then rinse it with deionized water;
[0061] (d) drying the quartz crucible in a vacuum oven for crystal growth;
[0062] Step 2: The a-direction CsPbBr for orientation processing 3 The seed crystal is placed in the seed crystal bag at the bottom of the crystal growth crucible, and then 220g CsPbBr 3 The polycrystalline material is placed in the crystal growth crucible, and the vacuum is...
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