Gate control bipolar-field field effect composite element semiconductor based vertical double-diffused metal oxide semiconductor transistor

A technology of oxide semiconductor and vertical double diffusion, which is applied in the direction of semiconductor devices, electrical components, circuits, etc.

Active Publication Date: 2019-09-06
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the on state, due to the short circuit between the base region and the source region, the parasitic bipolar transistor is still not turned on, and the device can only conduct electricity in the normally turned on channel

Method used

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  • Gate control bipolar-field field effect composite element semiconductor based vertical double-diffused metal oxide semiconductor transistor
  • Gate control bipolar-field field effect composite element semiconductor based vertical double-diffused metal oxide semiconductor transistor

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Embodiment Construction

[0026] Such as figure 1 As shown, the gate-controlled bipolar-field-effect compound element semiconductor-based vertical double-diffused metal-oxide-semiconductor transistor includes:

[0027] Elemental semiconductor substrate 1, the doping concentration is the concentration of general elemental semiconductor single crystal material, the typical value is 1×10 13 cm -3 ~1×10 15 cm -3 ;

[0028] The drift region 2 is epitaxially formed on the substrate, and the doping concentration of the drift region is 3×10 15 cm -3 ;

[0029] a gate insulating layer formed on the surface of the drift region, and forming a gate 7 above the gate insulating layer;

[0030] A heavily doped region 3 and a base region 4 are formed on the drift region; wherein, the doping concentration of the base region is 5×10 16 cm -3 , the doping concentration in the heavily doped region is 1×10 16 cm -3 ;

[0031] forming a source region 5 on the base region and simultaneously forming a channel on s...

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Abstract

The invention discloses a gate control bipolar-field field effect composite element semiconductor based vertical double-diffused metal oxide semiconductor transistor. A substrate and an epitaxially generated drift region of the structure are both made of element semiconductor materials; a base electrode is isolated from a source electrode and electrically connected with a gate electrode; and it issatisfied that when a voltage is applied to the gate electrode, a voltage obtained by a base region enables a bipolar transistor parasitized on a device to be turned on. Compared with a traditional device, while the device has the same breakdown voltage, the conduction current of the device is greatly improved, and the on resistance of the device is reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductor power devices, in particular to a vertical double-diffusion transistor. Background technique [0002] Power Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is a new generation of semiconductor power switching device developed on the basis of MOS integrated circuit technology. It has made great progress in the past 20 years. It started with LDMOS structure and experienced VVMOS, VUMOS, VDMOS. The evolution of structures such as , EXTFET, etc. is still dominated by VDMOS structures. Vertical double diffused metal oxide semiconductor (VDMOS) devices have a series of unique features such as high input impedance, fast switching speed, high operating frequency, voltage control, and good thermal stability. It has been widely used in switching steady-state power supplies, high-frequency heating, computer interface circuits, and power amplifiers. [0003] The traditional VDMOS uses a shor...

Claims

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Application Information

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IPC IPC(8): H01L29/78H01L29/167H01L29/10
CPCH01L29/1095H01L29/167H01L29/7802
Inventor 段宝兴董自明杨银堂
Owner XIDIAN UNIV
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