Novel lithium niobate optical waveguide wafer and preparation method thereof

An optical waveguide, lithium niobate technology, which is applied to optical waveguides, light guides, optics, etc., can solve the problems of complex preparation process, high preparation cost, low yield, etc., and achieves high light damage threshold, simple preparation process, and yield. high effect

Pending Publication Date: 2019-08-16
天津领芯科技发展有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] However, both of the above two existing technical solutions have problems such as complex preparation process and low maturity of preparation technology, resulting in high preparation cost and low yield, which cannot meet the requirements of mass production.

Method used

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  • Novel lithium niobate optical waveguide wafer and preparation method thereof
  • Novel lithium niobate optical waveguide wafer and preparation method thereof
  • Novel lithium niobate optical waveguide wafer and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0049] Such as figure 1 As shown, this embodiment provides a novel lithium niobate optical waveguide chip, including: a lithium niobate chip 1 and an optical waveguide 2;

[0050] The lithium niobate wafer 1 adopts an optical grade crystal, and its crystal orientation is one of four types: X-cut Y-pass or X-cut Z-pass or Y-cut Z-pass or Z-cut Y-pass;

[0051] The optical waveguide 2 is zinc oxide diffused lithium niobate optical waveguide, the waveguide width is 1 μm to 20 μm, and the waveguide depth is 1 μm to 20 μm.

[0052] Preferably, in order to utilize the maximum electro-optic coefficient γ of lithium niobate crystal 33 , the crystal orientation of the lithium niobate wafer 1 is selected as X-cut Y-pass or Z-cut Y-pass.

[0053] Preferably, the lithium niobate wafer 1 has a thickness of 0.1 mm to 2 mm.

[0054] Preferably, the lithium niobate wafer 1 has a thickness of 0.5 mm or 1 mm.

Embodiment 2

[0056] Such as figure 2 As shown, the present embodiment provides a manufacturing method of the novel lithium niobate optical waveguide wafer in Embodiment 1, and the flow chart of the manufacturing method is as follows figure 2 (a) to figure 2 (d), specifically include the following steps:

[0057] Step 1: using the conventional photolithography technology in the semiconductor process, a photoresist mask 3 with a pattern of the optical waveguide 2 is fabricated on the surface of the lithium niobate wafer 1;

[0058] Step 2: Prepare a layer of zinc oxide film 4 with a thickness of 10nm to 150nm on the photoresist mask by using one of the coating techniques such as electron beam evaporation or magnetron sputtering or ion sputtering;

[0059] Step 3: leave a strip-shaped zinc oxide film 4-1 with an optical waveguide 2 pattern on the surface of the lithium niobate wafer 1 through a lift-off process, the thickness of the strip-shaped zinc oxide film 4-1 is 10nm to 150nm, and ...

Embodiment 3

[0062] Such as image 3 As shown, the present embodiment provides another manufacturing method of the novel lithium niobate optical waveguide wafer in Embodiment 1, and the flow chart of the manufacturing method is as follows image 3 (a) to image 3 (d), specifically include the following steps:

[0063] Step 1: Prepare a zinc oxide film 4 with a thickness of 10nm to 150nm on the surface of the lithium niobate wafer 1 by using one of the coating techniques such as electron beam evaporation or magnetron sputtering or ion sputtering;

[0064] Step 2: Fabricate a photoresist mask 3 with a pattern of the optical waveguide 2 on the surface of the zinc oxide film 4 by photolithography;

[0065] Step 3: Corroding or etching the area other than the photoresist mask 3 by wet etching or dry etching, and leaving the strip-shaped oxidation of the optical waveguide 2 pattern on the surface of the lithium niobate wafer 1 The zinc thin film 4-1, the strip-shaped zinc oxide thin film 4-1 ...

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Abstract

The invention discloses a novel lithium niobate optical waveguide wafer. The novel lithium niobate optical waveguide wafer comprises a lithium niobate wafer and an optical waveguide, wherein the lithium niobate wafer is an optical-level wafer, and the crystal orientation is one of X-cutting Y-transmission or Z-cutting Y-transmission or X-cutting Z-transmission or Y-cutting Z-transmission; and theoptical waveguide is a zinc oxide diffusion lithium niobate optical waveguide. In addition, the invention also provides a preparation method of the two lithium niobate optical waveguide wafers. The zinc oxide diffusion lithium niobate optical waveguide provided by the invention has the following advantages that (1) the two polarization modes of TE and TM can be simultaneously transmitted, a lightdamage threshold value higher than that of the titanium diffusion optical waveguide is achieved, and the wafer is more suitable for being applied to a light transmission system requiring relatively high optical power transmission; (2) the relatively high light damage threshold value is achieved, the two polarization modes can be transmitted at the same time, and a phenomenon that one of the polarization modes is filtered is avoided; and (3) the preparation process is simple, the rate of finished products is high, the cost is low, and the wafer is more suitable for batch production.

Description

technical field [0001] The invention belongs to the technical fields of optical fiber sensing, optical fiber communication, microwave photonics, quantum communication, etc., and in particular relates to a novel lithium niobate optical waveguide chip and a preparation method thereof. Background technique [0002] (1) Introduction of original technology [0003] Lithium niobate optical waveguide is the core part of lithium niobate integrated optical devices such as phase modulators, intensity modulators, polarization controllers, and nonlinear wavelength converters. At present, the common preparation methods of lithium niobate optical waveguide include titanium diffusion technology and annealing proton exchange technology. The formed titanium diffusion waveguide and proton exchange waveguide have the characteristics of low insertion loss, good long-term stability, and wide operating wavelength range. Gyroscopes, fiber optic current transformers, high-speed optical communicati...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B6/13G02B6/122
CPCG02B6/122G02B6/13G02B2006/1204G02B2006/12085G02B2006/12166
Inventor 李萍史云玲刘丹
Owner 天津领芯科技发展有限公司
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