Conductive ink of ultra-low haze silver nanowire film and preparation method and application thereof

A technology of silver nanowires and conductive ink is applied in the field of conductive ink of ultra-low haze silver nanowire film and its preparation, which can solve the problems of high vacuum equipment, reduce costs and the like, achieve high production efficiency and ensure ultra-low haze , the effect of simple operation

Active Publication Date: 2019-08-16
NANJING SILVERNANO NEW MATERIALS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, indium tin oxide (ITO for short) is mainly used as the material for preparing transparent conductive films, but due to the brittleness of ITO itself, this requirement cannot be met, and the preparation of ITO uses the scarce element indium and requires high-vacuum equipment, so it is difficult to greatly reduce the cost.

Method used

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  • Conductive ink of ultra-low haze silver nanowire film and preparation method and application thereof
  • Conductive ink of ultra-low haze silver nanowire film and preparation method and application thereof
  • Conductive ink of ultra-low haze silver nanowire film and preparation method and application thereof

Examples

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Effect test

Embodiment 1

[0065] A preparation method of a conductive ink of an ultra-low haze silver nanowire film, comprising the following steps:

[0066] The synthesis of step A, silver nanowires,

[0067] Step A1. Weigh 0.84g of PVP (molecular mass: 500,000) into a 250ml Erlenmeyer flask, put 15ml of ethylene glycol solution into it, and place it on a heating plate at 130°C for 2 hours until PVP is completely dissolved and cooled naturally to obtain PVP Ethylene glycol solution;

[0068] Step A2, weigh 0.6g AgNO 3 Add 15mL of ethylene glycol, in a water bath at 4°C, ultrasonic at 100Hz for 7min to AgNO 3 Completely dissolved to get AgNO 3 Ethylene glycol solution;

[0069] Step A3, weigh 0.02gNaCl and 0.02gNaBr and dissolve them in 1ml ethylene glycol respectively to obtain two kinds of halogen ion ethylene glycol solutions;

[0070] Step A4, weigh 100mL of ethylene glycol and place it in a flask, and immerse the flask in an oil bath at room temperature, successively add the halide ion ethyle...

Embodiment 2

[0085] A preparation method of a conductive ink of an ultra-low haze silver nanowire film, comprising the following steps:

[0086] The synthesis of step A, silver nanowires,

[0087] Step A1. Weigh 0.4g of PVP (molecular mass: 360,000) and put it into 15ml of ethylene glycol solution, place it on a heating plate at 130°C for 2 hours until the PVP is completely thermally dissolved, then cool naturally to obtain a PVP ethylene glycol solution;

[0088] Step A2, weigh 0.5g AgNO 3 Add 15mL of ethylene glycol, in a water bath at 6°C, ultrasonic at 100Hz for 8min to AgNO 3 Completely dissolved to get AgNO 3 Ethylene glycol solution;

[0089] Step A3, taking 0.1g NaCl and dissolving it in 4ml ethylene glycol to obtain NaCl ethylene glycol solution;

[0090] Step A4, weigh 100mL of ethylene glycol and place it in a flask, and immerse the flask in an oil bath at room temperature, successively add the NaCl ethylene glycol solution obtained in step A3, the AgNO solution obtained in ...

Embodiment 3

[0105] A preparation method of a conductive ink of an ultra-low haze silver nanowire film, comprising the following steps:

[0106] The synthesis of step A, silver nanowires,

[0107] Step A1. Weigh 20g of PVP (molecular mass: 1.3 million) and put it into 170ml of ethylene glycol solution, place it on a heating plate at 130°C for 2 hours until the PVP is completely thermally dissolved, then cool naturally to obtain a PVP ethylene glycol solution;

[0108] Step A2, weigh 10g AgNO 3 Add 150mL ethylene glycol, in 8℃ water bath, 100Hz ultrasonic 9min to AgNO 3 Completely dissolved to get AgNO 3 Ethylene glycol solution;

[0109] Step A3, weigh 0.8g FeCl 3 Dissolve in 40ml of ethylene glycol to get FeCl 3 Ethylene glycol solution;

[0110] Step A4, weigh 1140mL ethylene glycol and place it in a flask, and immerse the flask in an oil bath at room temperature, and successively add the FeCl obtained in step A3 3 AgNO obtained in ethylene glycol solution, step A2 3 The PVP ethy...

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Abstract

The invention discloses a conductive ink of ultra-low haze silver nanowire film and a preparation method and an application thereof. The conductive ink is used to produce an ultra-low haze silver nanowire film. The silver nanowires obtained in the preparation method have a diameter of 20 nm and an length-diameter ratio of 1000. The optical ink produced by the conductive ink has an optical transmittance of more than 95% and a haze of less than 0.5%. The conductive ink in the present invention is formed in one time to achieve the photoelectric performance index of the film required for the high-definition screen. Silica sol is added to the conductive ink to tightly fix the silver nanowires on the substrate and form an aging protective layer on the surface thereof. The film has a surface hardness of 3H and is scratch resistant. The film has excellent environmental stability and anti-aging effect. The preparation method of conductive ink is environmentally friendly, non-polluting, and doesnot require expensive equipment such as high temperature and vacuum, and is easy to operate, and is advantageous for large-scale and low-cost promotion.

Description

technical field [0001] The invention belongs to the technical field of conductive ink of metal nanowires, in particular to a conductive ink of ultra-low haze silver nanowire film and its preparation method and application. Background technique [0002] Due to its excellent optical and electrical properties, transparent conductive films are widely used in touch, liquid crystal display, electronic display, electrocatalysis, solar cells, light emitting diodes and other devices. With the rapid development of the electronics industry, in addition to the requirements of intelligence and integration of electronic products, it is also expected that electronic equipment can be bent or even twisted and deformed. At present, indium tin oxide (ITO for short) is mainly used as the material for preparing transparent conductive films, but due to the brittleness of ITO itself, this requirement cannot be met. Moreover, the preparation of ITO uses the scarce element indium and requires high v...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09D11/52C09D11/03
CPCC09D11/03C09D11/52
Inventor 杨泽芳时君季书林
Owner NANJING SILVERNANO NEW MATERIALS TECH CO LTD
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