Cadmium zinc telluride single crystal furnace and growth process of cadmium zinc telluride single crystals

Abstract

A cadmium zinc telluride single crystal furnace comprises a furnace body, a quartz ampoule is arranged in the furnace body, a boron nitride crucible is arranged in the quartz ampoule, an excitation coil is arranged outside the furnace body, a heat conduction device is arranged below the quartz ampoule, and the furnace body is inclined by 3-15 degrees relative to the vertical direction. A growth process of cadmium zinc telluride single crystals includes the steps that Cd1-xZnxTe seed crystals are selected, and the Cd1-xZnxTe seed crystals are ground and then soaked in a bromine-methanol solution, wherein x is selected within the range of 0.04-0.2; Cd1-xZnxTe polycrystals are selected, and the quartz ampoule is vacuumized and then sealed, wherein x is 0.04; the furnace is inclined by 3-15 degrees relative to the vertical direction, wherein the spiral nitrogen pipeline is arranged below the quartz ampoule, and the excitation coil is installed outside the furnace; crystal seeding is carried out; crystal growth is carried out, wherein the furnace body is placed in a cusp magnetic field, the initial flow rate of nitrogen is 50 mL / min, and the flow rate is increased at the speed of 0.1 mL / min; in-situ annealing and cooling are carried out. The cadmium zinc telluride single crystals obtained by the growth process have good lattice structure integrity and large diameter, the single crystal yield is high, the quality of the obtained single crystals is improved, and the economic benefit is good.

Description

Technical field [0001] The invention relates to the technical field of crystal growth, in particular to a cadmium zinc telluride single crystal furnace and a growth process of the cadmium zinc telluride single crystal. Background technique [0002] Cadmium zinc telluride crystal is a wide band gap II-VI group compound semiconductor. It has excellent photoelectric properties. It can directly convert X-rays and γ-rays into electrons at room temperature. It has been used to produce room-temperature X-rays and γ-rays so far. The most ideal semiconductor material for the detector is widely used as the epitaxial substrate of the infrared detector HgCdTe and the room temperature nuclear radiation detector. The methods for manufacturing cadmium zinc telluride single crystals in the prior art mainly include vertical Bridgman method, horizontal Bridgman method, moving heating zone method, high-pressure Bridgman method and vertical gradient solidification method. Most of the above methods ...

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Problems solved by technology

[0005] However, for increasingly stringent application requirements, whether it is the traditional method or the production method mentioned in the above patent that can save the relative mechanical movement, the lattice structure integrity and diameter of the obtained single wafer cannot meet some high standards. The demand of application occasions, and the defect of low single crystal yield also lead to the poor economic benefits of producing CdZnTe single crystal

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