Method for detecting diffusion depth of semiconductor doping

Abstract

The invention relates to a method for detecting the diffusion depth of semiconductor doping, which comprises the steps of conducting diffusion of a doping agent, and measuring breakdown voltage of a semiconductor photoelectric detection device; calculating the diffusion depth of the doping agent according to the breakdown voltage, and carrying out supplementary diffusion on the device according tothe detected diffusion depth so as to optimize the diffusion process. The detection method does not need to complete tape-out proceses of all chips or split the chips into single chip devices, and does not need destructive sample preparation of other characterization detection means. In addition, the method can carry out large-scale fast and nondestructive testing and sampling on dots on siliconwafers while completing the diffusion of the doping agent, and is accurate, efficient and nondestructive in test characterization. The diffusion process is optimized based on the method so as to achieve expected objectives and subsequent tape-out processes.

Description

technical field [0001] The invention relates to the field of photodetectors, in particular to a method for detecting the diffusion depth of semiconductor doping. Background technique [0002] The thermal diffusion of semiconductor dopants is often used in III-V semiconductor photodetectors based on P-N junctions. Metal-organic Chemical Vapor Deposition (MOCVD), the diffusion profile and depth, etc. The gas flow rate, temperature, carrier gas flow rate, time and other parameters are related, and the diffusion process of III-V semiconductor photodetector chips based on P-N junctions often requires multiple diffusions, and each diffusion is not uniformly diffused across the entire chip. There are different situations such as forward diffusion, lateral diffusion, and constant concentration diffusion. It needs to be analyzed with the help of various advanced characterization methods. [0003] At present, the characterization and detection methods commonly used for the diffusion...

AI Technical Summary

Problems solved by technology

[0005] Aiming at the existing technical problems, the present invention proposes a method for detecting the diffusion depth of semiconductor doping, which is used to solve the problem that it is difficult to realize batch testing in the prior art, and is generally applicable to chips on the entire wafer, low cost, and non-destructive. Characterization detection problems of dopant diffusion

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