Mosaic growth method of large-size single-crystal diamond epitaxial wafer

Abstract

The invention provides a mosaic growth method of a large-size single-crystal diamond epitaxial wafer to overcome defects in mosaic preparation of large-size single-crystal diamond. Firstly, by use ofion injection and separation technologies, multiple single-crystal diamond epitaxial wafers with strictly consistent crystal orientation are obtained after chemical vapor deposition, then, the epitaxial wafers are arranged along consistent crystal orientation and bonded on a substrate, then, flattening processing and ion injection are performed, and finally, the large-size single-crystal diamond epitaxial wafer is obtained after chemical vapor deposition and separation. The single-crystal diamond epitaxial wafer of 1-6 inches can be obtained with the method, and the quality of crystals epitaxially growing at mosaic interfaces does not obviously deteriorate.

Description

technical field [0001] The invention belongs to the technical field of large-size single crystal diamond preparation, and in particular relates to a method for splicing and growing large-size single crystal diamond epitaxial wafers. Background technique [0002] As the basic material for the development of electricity, electronics and information technology, the performance of the first-generation semiconductor materials represented by Si has gradually approached the theoretical limit in terms of device operating voltage, power consumption, and device response speed. Traditional Si semiconductor devices are Faced with gradual replacement. The application requirements in the fields of high power, low loss, high temperature, and high frequency have prompted the emergence of a new batch of wide bandgap semiconductor materials such as SiC, GaN, and diamond. Compared with Si semiconductor materials, the band gap, breakdown electric field, carrier mobility, and thermal conductivi...

AI Technical Summary

Problems solved by technology

The current technology has generally achieved 8-10 mm high quality (diamond 1332 cm -1 Raman peak width at half maximum is less than 2.6 cm -1 ) epitaxial growth of single crystal diamond wafers, but due to the lack of larger seed crystals as substrates for single crystal diamond epitaxial growth, the preparation of inch-scale (>1 inch) single crystal diamond wafers for the development of diamond semiconductor devices still faces challenges focus on difficulties

[0004] At present, in the preparation process of large-sized single-crystal diamond materials, the method of splicing and growing smaller-sized single-crystal diamonds according to a consistent crystal orientation is usually used to obtain larger-sized single-crystal diamonds, as reported by Yamada in their research. The splicing growth method of 1-inch and 2-inch single crystal diamond [1, 2] has been proved, and the feasibility of obtaining splicing growth of large-size single-crystal diamond materials has been confirmed. The preparation of materials has not yet been well resolved

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