Ultralow power consumption ferroelectric transistor type memory based on two-dimensional organic functional material and preparation method thereof

Abstract

The invention discloses an ultralow power consumption ferroelectric transistor type memory based on a two-dimensional organic functional material and a preparation method thereof. The method is as below: growing an aluminum oxide insulating layer on a substrate by an atomic beam deposition method; preparing a layer of ultrathin ferroelectric polymer crystalline film at room temperature by utilizing an anti-solvent assisted crystallization method; then simultaneously growing a layer of ultrathin polymethyl methacrylate and a layer of ultrathin dioctyl benzothiophene benzothiophene by utilizinga floating coffee ring effect and a phase separation method; and finally transferring a gold film onto a dioctyl benzothiophene layer as a source electrode and a drain electrode by utilizing a non-invasive gold film transfer process. A quasi-two-dimensional ferroelectric polymer crystalline film and a two-dimensional organic molecular crystal C8-BTBT are used as a dielectric layer to prepare the fast transistor memory, so that the power consumption of the ferroelectric organic field effect transistor memory can be greatly reduced, and meanwhile, the low-voltage operation capability and the fast storage capability are realized.

Description

technical field [0001] The invention relates to the fields of two-dimensional organic functional materials, ferroelectric polymers, semiconductor technology, organic transistor memory and the like, in particular to an ultra-low power consumption organic non-volatile memory and its preparation. Background technique [0002] The development of modern electronic technology has put forward higher and higher requirements for information storage, such as high speed, low energy consumption and high integration density. With the continuous emergence of emerging functional information technologies such as smart terminals and cloud services, advanced sensing and Internet of Things technologies, and big data management, memory has become an important cornerstone to support changes in the field of information science in the current era. At present, silicon-based electrical memory based on traditional semiconductors has the advantages of fast storage and long-term storage of information,...

AI Technical Summary

Problems solved by technology

However, Fe-OFET memory power consumption is generally at the nJ level

The commonly used ferroelectric polymer P (VDF-TrFE) film is generally 200-1000nm, so a higher voltage is required to achieve the control of polarization reversal (30-100V), and the high operating voltage not only produces high energy consumption, but also leads to unreliable Long-term stability of the device and incompatibility with the requirements of portable products such as mobile data storage, consumer electronics terminals, and solid-state drives

On the other hand, the metal / semiconductor layer interface still has the problem of difficult carrier injection, resulting in extremely high contact resistance, and the related heat loss problem needs to be solved urgently

Furthermore, charge carrier accumulation and depletion in the channel determine the transition between on-off states in ferroelectric organic field-effect transistors, and the slower switching behavior is detrimental to the energy-efficient operation of the device

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