Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of metallographical section sample of sapphire substrate electronic assembly

A metallographic slicing and electronic component technology, which is used in the preparation, sampling, and analysis of materials for testing, can solve the problems of large loss of grinding and polishing materials, and achieve the advantages of saving loss, good surface effect, and improving surface grinding and polishing efficiency. Effect

Active Publication Date: 2019-07-16
全德科技(厦门)有限公司
View PDF10 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In order to overcome the technical problem of large loss of grinding and polishing materials in the preparation of metallographic section samples of existing sapphire substrate electronic components, the present invention provides a method for preparing metallographic section samples of sapphire substrate electronic components

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of metallographical section sample of sapphire substrate electronic assembly
  • Preparation method of metallographical section sample of sapphire substrate electronic assembly
  • Preparation method of metallographical section sample of sapphire substrate electronic assembly

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0053] The preparation method of the metallographic section sample of the sapphire substrate electronic component specifically includes the following steps:

[0054] Step S1, cutting the sapphire sample to be processed to obtain the sample to be ground, and selecting a grinding disc with a mesh type from coarse to fine to perform preliminary grinding on the sample to be ground after cutting, so as to obtain a preliminary grinding sapphire sample; and

[0055] In step S2, a polishing liquid with a mesh type of less than 2 μm is used to grind on the pre-ground sapphire sample to perform polishing treatment to obtain a desired metallographic section sample.

[0056] In the present invention, in order to achieve better sapphire sample processing, before cutting, it also includes embedding the sapphire sample to be observed. Specifically: the sapphire sample to be observed is placed in a sample mold and fixed, a mixture of resin and additives is placed, and the sapphire sample to be proce...

no. 1 Embodiment

[0084] The preparation method of the metallographic slice sample of the sapphire substrate electronic component is based on the analysis of the conductive circuit structure applied to the protective screen of the smart wearable device with the product code name B, and is carried out according to the following instrument and parameter conditions:

[0085] Use model BuehlerIso 5000 precision cutting machine, set the cutter wheel speed to 2500rpm, and the cutting rate to cut at 1.5mm / min.

[0086] Use a grinding and polishing machine model BuehlerPHOENIXBETA+VECTOR, set the grinding disc speed to 300rpm, and change the diamond grinding discs of 70μm, 40μm, 30μm, 15μm, 9μm, 6μm or 3μm in turn. Each mesh type corresponds to grinding for 5 minutes each .

[0087] Adopt a grinding and polishing machine model BuehlerPHOENIXBETA+VECTOR, set the speed of the grinding disc to 150rpm, and replace the diamond polishing liquid with 0.25μm and 0.05μm mesh in turn, and polish for 5min.

[0088] Use ...

no. 2 Embodiment

[0091] The difference from the above-mentioned first specific embodiment is that the speed of the grinding disc is 300 rpm, and the diamond grinding discs with the mesh type of 70 μm, 30 μm, 9 μm, 6 μm, or 3 μm are sequentially replaced.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a preparation method of a metallographical section sample of a sapphire substrate electronic assembly. By adopting the combination of cutting, grinding and abrasive polishing for a sapphire sample, the surface grinding and polishing efficiency of the metallographical section sample of the sapphire substrate electronic assembly can be improved; the grinding and polishing process design is carried out according to sequential combination of different mesh number types, good surface quality of the metallographical section sample can be prepared, and efficient grinding and polishing material selection and design of a relevant process can be achieved; and loss of grinding and polishing materials in the preparation of the metallographical section sample of the sapphire substrate electronic assembly can be effectively reduced, and meanwhile the observation effect of the metallographical sample can be improved.

Description

[0001] 【Technical Field】 [0002] The invention belongs to the technical field of metallographic section analysis, and specifically relates to a method for preparing a metallographic section sample of a sapphire substrate electronic component. [0003] 【Background technique】 [0004] The main component of sapphire single crystal is aluminum oxide, the hardness is second only to diamond, and its Mohs hardness can reach 9. Sapphire single crystal has the characteristics of scratch resistance, impact resistance, high melting point, good transparency, excellent electrical insulation, and stable chemical properties. It is widely used in industry, national defense, scientific research and other fields. In conventional metallographic section analysis, ordinary abrasive grinding and polishing materials are used. The abrasive is generally silicon carbide, which can be used for metallographic section analysis of electronic components made of glass. However, due to its high hardness and high b...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G01N1/28G01N1/32
CPCG01N1/286G01N1/32G01N2001/2866
Inventor 汤洪坤刘小梅黄丝梦杨詠钧杨培华谢忠诚
Owner 全德科技(厦门)有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com