Wavelength locker and wavelength-tunable laser

A wavelength locking and filter technology, applied in the field of wavelength tunable lasers, can solve problems such as insufficient reflectivity, influence on signal adjustment, and insufficient fineness, and achieve high integration, improved accuracy, process complexity, and low cost Effect

Inactive Publication Date: 2019-05-31
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But in general, because the reflectivity of the surface of the F-P cavity is not high enough, the 3dB bandwidth of the obtained transmission curve is wide, the fineness is not enough, and the adjustment of the signal is affected, so Distributed Bragg reflectors (Distributed Bragg reflectors) can be added on both sides of the cavity , DBR), thereby improving the overall reflectivity and enhancing the degree of signal change

Method used

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  • Wavelength locker and wavelength-tunable laser
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  • Wavelength locker and wavelength-tunable laser

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Embodiment Construction

[0030] Such as figure 1 , figure 2 , image 3 As shown, the present invention designs a wavelength locker for a wavelength tunable laser. The wavelength locker includes a beam splitter 1 (using a Y-shaped waveguide beam splitter), a filter 2 (that is, a DBRF-P cavity filter), a first photodiode 3 and a second photodiode 4 . Wherein, the signal output by the first photodiode is the reference signal 7, and the power is P1, and the signal output by the second photodiode is the transmission signal 6, and the power is P2, wherein the DBRF-P cavity filter 2 includes the first distributed Bragg reflector 8. F-P cavity 9, second distributed Bragg reflector 10. The beam splitter 2, the F-P cavity 9, the first DBR 8 and the second DBR 10 are arranged on the SOI chip. The wavelength locker is integrated on the SOI chip, and the SOI chip includes a silicon substrate 11 and a silicon dioxide buried oxide layer 12 .

[0031] Such as image 3 As shown, the incident light 5 passes throug...

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Abstract

The invention discloses a wavelength locker and a wavelength-tunable laser. The wavelength locker comprises a beam splitter for splitting an input light wave into two beams of light, a first photodiode for receiving a first beam of light split by the beam splitter and outputting a reference signal, a filter for filtering a second beam of light split by the beam splitter, and a second photodiode for receiving an optical signal outputted by the filter and outputting a transmitting signal. According to the invention, the wavelength locker based on the SOI chip has advantages of high integration,low process complexity and low cost; and the wavelength stability of the laser can be improved. The wavelength locker has the fineness higher than that of the existing F-P etalon by dozens of times; the overall structure is smaller than that of the exiting commercially available wavelength locker; the compactness is high; all wavelengths of the wavelength-tunable laser within a tuning range can belocked; and the stability of the output wavelength is improved.

Description

technical field [0001] The invention relates to a wavelength-tunable laser in the field of optical communication, in particular to a wavelength locker and a wavelength-tunable laser. Background technique [0002] In the rapid development of the times, society's demand for information is growing explosively, and at the same time, higher requirements are placed on the speed and power consumption of information transmission. Advances in computer technology (and the continuation of Moore's Law) increasingly depend on faster data transfers between and within microchips. Optical interconnects may offer a path forward, while silicon photonics dominates when devices are once integrated on silicon. MUX / DEMUX (multiplexing / demultiplexing) of optical signals is another important component of optical communication networks. All these network building blocks integrated on silicon as silicon photonics devices have many advantages over conventional stand-alone optics and electronics. In...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B6/125G02B6/124
Inventor 黄莹储涛
Owner ZHEJIANG UNIV
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