Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A kind of capacitive pressure sensor and preparation method thereof

A pressure sensor and capacitive technology, applied in the direction of instruments, measuring force, measuring devices, etc., can solve the problems of complex process, high preparation cost, and long time consumption

Active Publication Date: 2021-01-12
三三智能科技(日照)有限公司
View PDF6 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

On the other hand, we used self-assembled porous anodized aluminum oxide (AAO) templates with low cost, simple preparation process and long-range ordered pores to assist in the preparation of ion gel nano-microstructure arrays, which successfully solved the problem of high preparation cost and energy consumption in the prior art. Time-consuming, complicated process, problems of adhesion between microstructured film and template

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of capacitive pressure sensor and preparation method thereof
  • A kind of capacitive pressure sensor and preparation method thereof
  • A kind of capacitive pressure sensor and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0067] 1. A capacitive pressure sensor, such as figure 1 As shown, the sensor includes: a top electrode, a bottom electrode, an ion gel medium layer and a wire; wherein: the top electrode and the bottom electrode are all made of a substrate 4 whose surface is provided with a silver nanowire (Ag NWs) layer 5; The wire 9 extending to the outside of the silver nanowire layer 5 is embedded in the silver nanowire layer;

[0068] The ion gel medium layer is provided on the surface of the silver nanowire layer 5 on the top electrode and the bottom electrode; the structure of the ion gel medium layer is: the surface of the base layer 6 is distributed with columnar ion gel 7 , the shown columnar ion gel 7 includes a gap 8, thereby forming an ion gel medium layer of an array structure, and the ion gel layer medium layer is composed of P(VDF-HFP) polymer and [EMI][TFSA] Made of ionic liquid;

[0069] The structure of the capacitive pressure sensor is as follows: the base layer 6 is pos...

Embodiment 2

[0089] A preparation method of a capacitive pressure sensor, comprising the steps of:

[0090] (1) A porous AAO template, such as figure 2 Shown, its preparation method is specifically as follows:

[0091] S1. Soak the aluminum sheet in acetone and ethanol solution and ultrasonically clean it for 30 minutes, then transfer it to a medium-temperature tube furnace, and heat it under N 2 Under atmosphere, anneal at 450°C for 7h;

[0092] S2. With the aluminum sheet annealed in step S1 as the anode, the lead block as the cathode, and 0.3mol / L oxalic acid as the electrolyte, carry out the first oxidation reaction, the reaction voltage is 205V, and the reaction time is 2h. Preliminary ordered alumina film;

[0093] S3. Soak the aluminum sheet obtained in step S1 in a mixed solution of 6wt% phosphoric acid and 1.8wt% chromic acid, place it in an oven at 80° C., remove the surface aluminum oxide film formed by primary oxidation, and take it out after 10 hours. Rinse with deionized...

Embodiment 3

[0108] A preparation method of a capacitive pressure sensor, comprising the steps of:

[0109] (1) The preparation method of the porous AAO template is the same as in Example 1.

[0110] (2) ion gel preparation: P (VDF-HFP) polymer is dissolved in N-methylpyrrolidone, obtains the solution that concentration is 18wt%, then adds [EMI] [TFSA] ionic liquid, described (P( The weight ratio of VDF-HFP) to [EMI][TFSA] was 6.7:3.3, and the ion gel was obtained; then heated and stirred in a water bath at 75°C for 30min to prepare P(VDF-HFP) / [EMI][TFSA] ions gel.

[0111] (3) Preparation of ion gel / AAO: spin-coat the ion gel prepared in step (2) on the AAO prepared in step (1), the spin coating process is: spin coating at a speed of 2000rpm for 80s, so that the ion gel It can be spread evenly to obtain ion gel / AAO.

[0112] (4) Iongel / AAO hot-pressing treatment: place the iongel / AAO in step (3) on a hot plate at 80°C and dry for 8 hours to volatilize the N-methylpyrrolidone solvent in t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
pore sizeaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention belongs to the technical field of capacitive pressure sensors, and particularly relates to a capacitive pressure sensor and a preparation method thereof. The sensor comprises electrodes,an ionic gel dielectric layer and wires, wherein the electrode is composed of a substrate of which the surface is provided with a silver nanowire layer; a wire extending to the outside of the silvernanowire layer is embedded in the silver nanowire layer; the ionic gel dielectric layer is arranged on the surfaces of the silver nanowire layers on the top electrode and the bottom electrode; the structure of the ionic gel dielectric layer is as follows: columnar ionic gel is distributed on the surface of a substrate layer; wherein the substrate layer in the ionic gel dielectric layer is arrangedon the silver nanowire layer of one electrode, and the silver nanowire layer of the other electrode is arranged on the columnar ionic gel in the ionic gel dielectric layer. The prepared sensor is high in sensitivity, small in hysteresis and good in repeatability, and can be widely applied to electronic skin, wearable products, implantation equipment and multifunctional sensor systems.

Description

technical field [0001] The invention relates to the technical field of pressure sensors, in particular to a capacitive pressure sensor and a preparation method thereof. Background technique [0002] Flexible electronic technology is an emerging electronic technology that integrates electronic components on flexible and extensible plastic or thin metal substrates. Compared with traditional inorganic rigid electronic devices, flexible electronic devices have unique advantages in terms of applicability, portability and comfort. Advantage. Flexible stress sensors convert physiological activity signals into visible electrical signals in the form of signal conduction, and have the characteristics of thinness, portability, excellent electrical performance, and high integration. Among many types of stress sensors, capacitive stress sensors have high response speed and dynamic range, high sensitivity to force, and can detect small static forces with low energy consumption. They are ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G01L1/14
Inventor 李阳郭云建牛闳森岳文静张春伟
Owner 三三智能科技(日照)有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com