Top covering layer of vertical magnetic resistance element, and manufacturing method of top covering layer

Abstract

The invention provides a top covering layer of a vertical magnetic resistance element. The top covering layer sequentially comprises an oxide covering layer and a metal top covering multilayer film, wherein the metal top cover multilayer film is composed of an oxidation prevention layer, a structure transition layer, an etching stop layer, and a hard mask layer; and the lower portion of the oxidation prevention layer is attached to the oxide covering layer. The invention further provides the vertical magnetic resistance element and a manufacturing method thereof; the manufacturing method comprises the following steps that 1, a bottom electrode layer, a seed layer, a vertical magnetic reference layer, a tunnel barrier layer and a magnetic memory layer are gradually grown on the substrate insequence; 2, the oxide covering layer is grown on the magnetic memory layer; 3, the metal top covering multilayer film is grown on the oxide covering layer in sequence; and 4, annealing treatment iscarried out on the magnetic resistance element multilayer film formed in the step 1 to the step 3. The introduction of the oxidation prevention layer and the structure transition layer can help improve the material and magnetoresistance performance of the MTJ multilayer film. Meanwhile, due to the removal of the TA, the etching of the MTJ multilayer film becomes relatively easy.

Description

technical field [0001] The invention relates to a top covering layer of a vertical magnetoresistance element and a manufacturing method thereof, belonging to the technical field of magnetic storage devices. Background technique [0002] In recent years, MRAM using the magnetoresistance effect of Magnetic Tunnel Junction (MTJ) is considered to be the future solid-state non-volatile memory, which has the characteristics of high-speed reading and writing, large capacity and low energy consumption. Ferromagnetic MTJ is usually a sandwich structure, which includes: a magnetic memory layer, which can change the magnetization direction to record different data; an insulating tunnel barrier layer in the middle; a magnetic reference layer, located on the other side of the tunnel barrier layer, Its magnetization direction does not change. [0003] In order to record information in this magnetoresistive element, a writing method based on spin-momentum transfer or spin transfer torque ...

AI Technical Summary

Problems solved by technology

Generally speaking, due to the strong affinity adsorption of Ta to B atoms, B atoms will be adsorbed to the surface layer of Ta through the MgO layer during the high-temperature annealing process, thereby improving the purity of CoFe in the memory layer, but Ta itself is at high temperature. During the process, it will also diffuse into the lower MgO and be oxidized or even diffuse into the memory layer, thus affecting the magnetoresistance properties of CoFe

This structure also has a process problem. The Ta in the interlayer MgO / Ta / Ru will bring difficulties to the etching of the MTJ multilayer film.

Therefore, the two commonly used structures, MgO / / Ru / Ta and MgO / Ta / Ru / Ta, have their own disadvantages

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