Phase composition controllable indium gallium zinc oxide target material and preparation method thereof

A technology of indium gallium zinc oxide and gallium oxide, which is applied in the field of indium gallium zinc oxide target material and its preparation, can solve problems such as hindering the application of IGZO target material, affecting the performance of thin films, and affecting the performance of thin film devices, achieving high industrial utilization value, The effect of high density

Active Publication Date: 2019-04-23
ZHENGZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the IGZO target is sintered in a multi-component system, uneven distribution of components is prone to occur during the sintering process.
In addition, during the sintering and densification process, the IGZO target may have multiple phase components, such as Ga 2 ZnO 4 , InGaZnO 4 , InGaZn 3 o 6 , InGaZn 4 o 7 , InGaZn 5 o 8 , InGaZn 6 o 9 etc., while the

Method used

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  • Phase composition controllable indium gallium zinc oxide target material and preparation method thereof
  • Phase composition controllable indium gallium zinc oxide target material and preparation method thereof
  • Phase composition controllable indium gallium zinc oxide target material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0055] In Example 1, the preparation method of the IGZO (Indium Gallium Zinc Oxide) target material with controllable phase composition includes:

[0056] The three components of nano-level high-purity indium oxide powder, gallium oxide powder and zinc oxide powder are mixed in a molar ratio of 1:1:1, 0.5% ammonium polyacrylate is selected as the dispersant, and 0.8% polyvinyl alcohol is selected as the Binder, choose 50% pure water as ball milling medium;

[0057] Put the powder mixture composed of indium oxide powder, gallium oxide powder and zinc oxide powder, ammonium acrylate, pure water, and three specifications of zirconia grinding balls into a 1L zirconia ball mill jar, and mix the mixture on the ball mill Ball milling, add 0.1% dispersant again after 24 hours of ball milling, add 0.2% dispersant for the last time after 24 hours of ball milling, and ball mill again for 1 hour; add binder and continue ball milling for 1 hour, and the ball milling ends; the speed of the ball ...

Embodiment 2

[0063] In Example 2, the preparation method of the indium gallium zinc oxide target material with controllable phase composition includes:

[0064] The three components of nano-level high-purity indium oxide powder, gallium oxide powder and zinc oxide powder are mixed in a molar ratio of 1:1:2, 0.4% ammonium polyacrylate is selected as the dispersant, and 0.8% polyvinyl alcohol is selected as the As the binder, 55% pure water is selected as the ball milling medium;

[0065] Put the powder mixture composed of indium oxide powder, gallium oxide powder and zinc oxide powder, ammonium acrylate, pure water, and three specifications of zirconia grinding balls into a 1L zirconia ball mill jar, and mix the mixture on the ball mill Ball milling, add 0.2% dispersant again after 24 hours of ball milling, add 0.2% dispersant for the last time after 24 hours of ball milling, and ball mill again for 1 hour; add binder and continue ball milling for 1 hour, and the ball milling ends; the speed of ...

Embodiment 3

[0071] In Example 3, the preparation method of the indium gallium zinc oxide target material with controllable phase composition includes:

[0072] The three components of nano-level high-purity indium oxide powder, gallium oxide powder and zinc oxide powder are mixed in a molar ratio of 1:1:8, 0.3% ammonium polyacrylate is selected as the dispersant, and 0.9% polyvinyl alcohol is selected as the Binder, choose 60% pure water as ball milling medium;

[0073] Put the powder mixture composed of indium oxide powder, gallium oxide powder and zinc oxide powder, ammonium acrylate, pure water, and three specifications of zirconia grinding balls into a 1L zirconia ball mill jar, and mix the mixture on the ball mill Ball milling, add 0.2% dispersant again after 24 hours of ball milling, add 0.3% dispersant for the last time after 24 hours of ball milling, and ball mill again for 1 hour; add binder and continue ball milling for 1 hour, and the ball milling ends; where the speed of the ball m...

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Abstract

The invention discloses a phase composition controllable indium gallium zinc oxide target material and a preparation method thereof. The preparation method includes that indium oxide powder, gallium oxide powder and zinc oxide powder are mixed according to the set molar ratio to obtain a mixed powder; the mixed powder is mixed with the set amount of dispersant, binder and ball milling medium; a ball milling device is applied to control the ball milling parameters, and the ball milling mixing is carried out to obtain a mixed material; the mixed material is sprayed and granulated on a granulator, the product obtained by spray granulation is molded and a target blank is obtained; and the target blank is sintered to obtain the IGZO target material with controllable phase composition. A high quality IGZO target material with single phase and controllable phase is obtained by controlling the process parameters effectively in the preparation process according to the molar ratio of the raw materials. Other mixed phase composition is not contained in the target material, no secondary phase structure is existed between grains and inside, the bonding between grains is compact, and the targetmaterial has high density and has high industrial utilization value.

Description

Technical field [0001] The application belongs to the technical field of metal oxide target materials, and specifically relates to an indium gallium zinc oxide target material with controllable phase composition and a preparation method thereof. Background technique [0002] Indium Gallium Zinc Oxide (IGZO), or indium gallium zinc oxide, is a new type of semiconductor material. It is composed of four elements: In~Ga~Zn~O. Its conductivity type is n-type. The belt width is about 3.5 eV. IGZO thin film materials have the advantages of high mobility, strong chemical stability and relatively simple preparation process. Compared with the most commonly used α-Si materials for thin film transistors (TFT), the electron cloud density of metal ions in IGZO is spherically symmetrically distributed in the amorphous state and is not sensitive to changes in direction, making IGZO materials in the amorphous state It still maintains a high electron mobility, so it can be uniformly fabricated a...

Claims

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Application Information

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IPC IPC(8): C04B35/457C04B35/622
CPCC04B35/457C04B35/622C04B2235/3286C04B2235/3293
Inventor 陈杰齐超孙本双舒永春曾学云何季麟
Owner ZHENGZHOU UNIV
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