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Cu2S-SiW12/MoS2 composite counter electrode and preparation method thereof and quantum dot solar sensitized cell

An electrode and composite layer technology, applied in the field of solar cells, can solve the problems of large overpotential, slow charge transfer rate, and reduced catalytic activity, and achieve excellent catalytic performance, improve photoelectric conversion efficiency, and reduce the effect of interface charge transfer impedance

Active Publication Date: 2019-04-16
NORTHEAST NORMAL UNIVERSITY
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in QDSSCs, the charge transfer resistance of the Pt counter electrode surface in the polysulfide electrolyte is large, and the slow charge transfer rate of electrocatalytic reduction leads to a large overpotential, making the Pt counter electrode in quantum dot-sensitized solar cells. Catalytic activity is low
In addition, S in polysulfide electrolytes 2- It is easy to adsorb to the surface of Pt counter electrode, poisoning Pt and reducing its catalytic activity

Method used

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  • Cu2S-SiW12/MoS2 composite counter electrode and preparation method thereof and quantum dot solar sensitized cell
  • Cu2S-SiW12/MoS2 composite counter electrode and preparation method thereof and quantum dot solar sensitized cell
  • Cu2S-SiW12/MoS2 composite counter electrode and preparation method thereof and quantum dot solar sensitized cell

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preparation example Construction

[0037] The present invention provides the Cu described in the technical solution 2 S-SiW 12 / MoS 2 A preparation method for a composite counter electrode, comprising the following steps:

[0038] (1) The mixed solution including sulfur source, soluble cuprous salt, dispersant and solvent is subjected to hydrothermal reaction to obtain Cu 2 S;

[0039] (2) the Cu 2 S, binder and solvent are mixed to obtain Cu 2 S slurry;

[0040] (3) After mixing the soluble molybdenum salt, sulfur source and water, adjust the pH value of the mixture to 5.5-6.5 with silicotungstic acid, and then carry out hydrothermal reaction to obtain SiW 12 / MoS 2 ;

[0041] (4) the SiW 12 / MoS 2 , binder and solvent are mixed to obtain SiW 12 / MoS 2 slurry;

[0042] (5) Coating Cu sequentially on the conductive substrate 2 S paste and SiW 12 / MoS 2 slurry, after heat treatment, to obtain Cu 2 S-SiW 12 / MoS 2 Composite counter electrode;

[0043] The step (1) and step (3), the step (2) an...

Embodiment 1

[0073] Preparation of Cu2 S-SiW 12 / Mo 2 S counter electrode

[0074] 1) Clean the substrate

[0075] Clean the FTO conductive glass substrate with deionized water first, dry it, and then soak it in a saturated solution of isopropanol containing KOH for 12 hours to remove the dust and grease on the surface of the FTO substrate, and then wash it with deionized water, acetone, Ethanol was sonicated for 15 minutes each, and finally dried for later use.

[0076] 2) Cu 2 S-SiW 12 / Mo 2 Preparation of S composites

[0077] Cu 2 Preparation of S: Add 5mmol thiourea, 2mmol CuCl and 0.3g polyvinylpyrrolidone to 20mL ethylene glycol and 20mL ethanol, stir at room temperature for 30min, then transfer to a 100mL hydrothermal kettle, heat at 150°C for 12h, cool to room temperature and filter to obtain The black precipitate was washed three times with ethanol, and then placed in a drying oven at 50°C for 10 h.

[0078] SiW 12 / Mo 2 Preparation of S: 1mmolNa 2 MoO 4 Add 60mL dei...

Embodiment 2

[0084] Fabrication of quantum dot-sensitized solar cells

[0085] (1) Preparation of CdS quantum dots sensitized TiO 2 Photoanode (TiO 2 / CdS)

[0086] 1gTiO 2 P25 was mixed with 4g terpineol to prepare a slurry, and then screen-printed and applied to the FTO conductive glass substrate. TiO 2 Photoanode immersed in 0.02M CdCl 2 , 0.066M NH 4 Cl, 0.14M thiourea, and 0.23M ammonia water mixed solution for 4.5h, take out and rinse with ethanol, and wait for the sample to dry. TiO deposited with CdS quantum dots will be prepared 2 The photoanode was calcined at 300°C for 30min.

[0087] (2) Assembling and testing quantum dot-sensitized solar cells

[0088] CdS / TiO 2 Photoanode and the Cu prepared in Example 1 2 S-SiW 12 / Mo 2 Put the S pair of electrodes facing each other, then fix the two sides with clips, seal the bottom end with sealing glue, and inject the electrolyte solution from the opening at the top. The composition of the electrolyte solution is 0.5M Na 2 A...

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Abstract

The invention provides a Cu2S-SiW12 / MoS2 composite counter electrode and a preparation method thereof and a quantum dot solar sensitized cell, which belong to the technical field of solar cells. The Cu2S-SiW12 / MoS2 composite counter electrode comprises a conductive substrate and a Cu2S layer and a SiW12 / MoS2 composite layer attached successively to the conductive substrate. The Cu2S-SiW12 / MoS2 composite counter electrode provided in the invention has excellent catalytic performance in a polysulfide electrolyte, and can effectively reduce the interface charge transfer impedance of the quantum dot sensitized solar cell.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a Cu 2 S-SiW 12 / MoS 2 A composite counter electrode, a preparation method thereof, and a quantum dot-sensitized solar cell. Background technique [0002] As a pure renewable energy source, solar energy is an ideal new energy source to solve the environmental and energy problems faced by human beings. At present, the development of cost-effective solar cells is one of the effective ways to utilize solar energy. Quantum dot-sensitized solar cells (QDSSCs), as the third-generation solar cells, are a type of sensitized cells that use inorganic semiconductor nanocrystalline materials as sensitized materials. Compared with traditional materials, quantum dot materials have many advantages such as low price, wide absorption range and relatively stable. The highest theoretical cell efficiency of QDSSCs can reach 44%, which has broken through the energy conversion limit of existi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G9/20H01G9/042H01G9/048
CPCH01G9/2022Y02E10/542
Inventor 历凤燕李丽雪许林
Owner NORTHEAST NORMAL UNIVERSITY
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