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Etching solution of low doped silicon electrode

An etching solution, silicon electrode technology, applied in the direction of surface etching compositions, chemical instruments and methods, etc., can solve the problems of uncontrollable etching rate and surface effect, etc.

Inactive Publication Date: 2019-04-05
湖北兴福电子材料股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, simply using nitric acid and hydrofluoric acid as etching solution, the etching rate and surface effects (such as uniformity, roughness, etc.) are uncontrollable

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] A kind of etchant of low-doped silicon electrode, preparation method is as follows:

[0020] (1) The mass percentage of each component is: 57% sulfuric acid, 4% nitric acid, 5% ammonium fluoride, 3% ammonium chloride, and 31% ultrapure water.

[0021] (2) Weigh the required amount of ultrapure water into the PFA bottle, slowly add sulfuric acid with a mass fraction of 57% and a concentration of 96% into the ultrapure water, and mix well.

[0022] (3) After the solution is cooled to room temperature, add 69% nitric acid with a mass fraction of 4%, ammonium fluoride with a mass fraction of 5%, and ammonium chloride with a mass fraction of 3% to the solution in sequence, and mix well stand-by.

[0023] (4) The entire preparation process is carried out in a water bath to ensure that the temperature of the etching solution is stable at room temperature.

[0024] The silicon electrode accessories used in the gas dry etching machine were etched at 25° C. for 3 minutes using ...

Embodiment 2

[0026] A kind of etchant of low-doped silicon electrode, preparation method is as follows:

[0027] (1) The mass percentage of each component is: 57% sulfuric acid, 4% nitric acid, 5% ammonium fluoride, 3% ammonium chloride, and 31% ultrapure water.

[0028] (2) Weigh the required amount of ultrapure water into the PFA bottle, slowly add sulfuric acid with a mass fraction of 57% and a concentration of 96% into the ultrapure water, and mix well.

[0029] (3) After the solution is cooled to room temperature, add 69% nitric acid with a mass fraction of 4%, ammonium fluoride with a mass fraction of 5%, and ammonium chloride with a mass fraction of 3% to the solution in sequence, and mix well stand-by.

[0030] (4) The entire preparation process is carried out in a water bath to ensure that the temperature of the etching solution is stable at room temperature.

[0031] The silicon electrode parts used in the gas dry etching machine were etched at 35° C. for 3 minutes using the et...

Embodiment 3

[0033] A kind of etchant of low-doped silicon electrode, preparation method is as follows:

[0034] (1) The mass percentage of each component is: 58% sulfuric acid, 6% nitric acid, 7.5% ammonium fluoride, 2% ammonium chloride, 26.5% ultrapure water.

[0035] (2) Weigh the required amount of ultrapure water into the PFA bottle, slowly add sulfuric acid with a mass fraction of 58% and a concentration of 96% into the ultrapure water, and mix well.

[0036] (3) After the solution is cooled to room temperature, add 69% nitric acid with a mass fraction of 6%, ammonium fluoride with a mass fraction of 7.5% and ammonium chloride with a mass fraction of 2% to the solution in sequence, and mix well stand-by.

[0037] (4) The entire preparation process is carried out in a water bath to ensure that the temperature of the etching solution is stable at room temperature.

[0038] The silicon electrode accessories used in the gas dry etching machine were etched at 25° C. for 3 minutes using...

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Abstract

The invention discloses etching solution of a low doped silicon electrode. The etching solution comprises the following main components according to a total weight of the etching :45-65% of sulfuric acid, 1-10% of nitric acid, 1-10% of ammonium fluoride, 1-10% of ammonia chloride, and 5-52% of ultrapure water. The etching solution is capable of, through using the nitric acid with low content, reducing a whole etching rate; through using the ammonium fluoride to replace hydrofluoric acid, guaranteeing the stable etching rate; and adding the ammonia chloride as a replenisher of an ammonium radical ion, generating intensive small bubbles in an etching process, and conveniently controlling roughness on the surface of a silicon electrode. The etching solution is capable of completely removingdamage caused by grinding, stable in etching rate, uniform in etching surface, and controllable in surface roughness.

Description

technical field [0001] The invention relates to an etchant for a low-doped silicon electrode, which is used to remove the damage caused by grinding and ensure the excellent electrical performance of the silicon electrode accessories. Background technique [0002] During the manufacturing process of silicon electrode accessories, grinding, etching, cleaning and other processes are required, and the surface of silicon electrodes will be damaged to varying degrees after grinding, and these damages will affect the electrical properties of silicon electrodes. In order to completely remove these damages, chemical etching is generally used for treatment, and silicon electrodes with uniform surface and easy-to-control roughness can be obtained. [0003] At present, the chemical etching of silicon mainly uses nitric acid-hydrofluoric acid system. According to the ratio and concentration of nitric acid and hydrofluoric acid, the etching of silicon can be divided into: when the content...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K13/08C23F1/24
CPCC09K13/08
Inventor 李少平张庭贺兆波尹印万杨阳冯凯王书萍
Owner 湖北兴福电子材料股份有限公司
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