A light-emitting diode epitaxial wafer and its preparation method

A technology of light-emitting diodes and epitaxial wafers, which is applied in semiconductor devices, electrical components, circuits, etc., and can solve the problems of low luminous efficiency of lattice-mismatched LEDs

Active Publication Date: 2020-07-07
HC SEMITEK ZHEJIANG CO LTD
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The embodiment of the present invention provides a light-emitting diode epitaxial wafer and its preparation method, which can solve the problem of low luminous efficiency of LED caused by the large lattice mismatch between the well layer and the barrier layer in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A light-emitting diode epitaxial wafer and its preparation method
  • A light-emitting diode epitaxial wafer and its preparation method
  • A light-emitting diode epitaxial wafer and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] In order to make the object, technical solution and advantages of the present invention clearer, the implementation manner of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0028] An embodiment of the present invention provides a light emitting diode epitaxial wafer. figure 1 A schematic structural diagram of a light emitting diode epitaxial wafer provided by an embodiment of the present invention. see figure 1 , the light-emitting diode epitaxial wafer includes a substrate 10, an N-type semiconductor layer 20, an active layer 30, and a P-type semiconductor layer 40, and the N-type semiconductor layer 20, the active layer 30, and the P-type semiconductor layer 40 are sequentially stacked on the substrate 10 superior.

[0029] figure 2 A schematic structural diagram of an active layer provided by an embodiment of the present invention. see figure 2 , in this embodiment, the active layer 30 includes ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses an LED epitaxial wafer and a preparation method thereof, and belongs to the technical field of semiconductors. The LED epitaxial wafer comprises a substrate, an N-type semiconductor layer, an active layer and a P-type semiconductor layer, wherein the N-type semiconductor layer, the active layer and the P-type semiconductor layer are sequentially stacked on the substrate; the active layer comprises a plurality of composite structures stacked in sequence; each of the composite structures comprises a well layer and a barrier layer laminated on the well layer; the well layers, closest to the P-type semiconductor, in the active layer are first well layers; each of first well layers comprises a first sub-layer, a second sub-layer and a third sub-layer sequentially stacked; the material of the first sub-layer is InN; the material of the second sub-layer is InxGa1-xN; the material of the third sub-layer is InyGa1-yN; y is greater than 0 and smaller than x and x is greater than y and smaller than 1. The photoelectric performance of the epitaxial wafer can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a light-emitting diode epitaxial wafer and a preparation method thereof. Background technique [0002] A light-emitting diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor electronic component that can emit light. LED has the advantages of high efficiency, long life, small size, low power consumption, etc., and can be used in indoor and outdoor white light lighting, screen display, backlight and other fields. In the development of the LED industry, gallium nitride (GaN)-based materials are typical representatives of Group V-III compound semiconductors, and improving the photoelectric performance of GaN-based LEDs has become the key to the semiconductor lighting industry. [0003] Epitaxial wafers are the primary products in the LED manufacturing process. The existing GaN-based LED epitaxial wafer includes a substrate, an N-type semiconductor lay...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/06H01L33/14H01L33/32
CPCH01L33/0075H01L33/06H01L33/145H01L33/32
Inventor 李昱桦乔楠蒋媛媛刘春杨胡加辉李鹏
Owner HC SEMITEK ZHEJIANG CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap