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Double-layer/multilayer thermoelectric device and preparation method thereof

A thermoelectric device, double-layer technology, used in the manufacture/processing of thermoelectric devices, junction lead-out materials of thermoelectric devices, thermoelectric devices using only the Peltier or Seebeck effect, etc.

Active Publication Date: 2019-03-08
UNIV OF SCI & TECH BEIJING +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

By forming a multilayer device with a simpler structure, it overcomes its η when the ambient temperature difference is small max too low defect

Method used

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  • Double-layer/multilayer thermoelectric device and preparation method thereof
  • Double-layer/multilayer thermoelectric device and preparation method thereof
  • Double-layer/multilayer thermoelectric device and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0054] Please see figure 1 , the double-layer thermoelectric device A includes two upper and lower thermoelectric sub-modules A1 and A2 with the same structure, corresponding to the high temperature section and the low temperature section respectively. The thermoelectric sub-module contains a pair of n-type and p-type thermoelectric arms. Each set of thermoelectric arms has the following 5 layers, from top to bottom: high melting point metal layers 5 and 6, metallization layers 7 and 8, and thermoelectric materials 9 and 10 , metallization layers 11 and 12, high melting point metal layers 13 and 14; the two ends of the above-mentioned pair of thermoelectric arms 1 and 2 are connected to the pure copper conductive connecting piece 2 or On the conductive connecting sheets 17 and 18, the thickness is 0.8 mm, and further connected to the AlN high thermal conductivity ceramic sheet 1 or 19 with a thickness of 0.38 mm. Correspondingly, the thermoelectric sub-module A2 also has the ...

Embodiment 2-4

[0067] The structure of the double-layer thermoelectric device in Examples 2-4 is basically the same as that of Example 1, and its preparation method is also very similar, except that the selected thermoelectric material and the corresponding metallization layer and the type of high melting point metal are different, as shown in the following table 1 shown

[0068]

[0069] The metallization layer and high melting point metal used are shown in Table 2

[0070]

High temperature section metallization layer

Metallization layer in low temperature section

High melting point metal in high temperature section

Metals with high melting point in low temperature section

Example 2

co 0.8 Fe 0.2

Ni

Cu

Cu

Example 3

co 0.7 Fe 0.3

Ni

Cu

Cu

Example 4

co 0.6 Fe 0.4

Ni

Cu

Cu

[0071] Among them, the thickness of each layer is shown in the following table 3

[0072]

[0073] Where...

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Abstract

The invention relates to a double-layer / multilayer thermoelectric device and belongs to the technical field of thermoelectric conversion. The double-layer / multilayer thermoelectric device at least comprises thermoelectric sub-modules corresponding to two different temperature segments and an insulating material layer located in front of the thermoelectric sub-modules; the at least one thermoelectric sub-module comprises a thermoelectric material with low low-temperature electric conductivity and high high-temperature electric conductivity, namely a high-temperature ZT value is more than 10 times higher than a low-temperature ZT value; the thermoelectric material with low room temperature electric conductivity and high high-temperature electric conductivity corresponds to the high-temperature segment thermoelectric sub-module; each thermoelectric sub-module comprises a plurality of pairs of n-type and / or p-type thermoelectric arms, wherein the internal structure of each thermoelectric arm is five layers of a high-melting-point metal layer, a metallization layer, a thermoelectric material, a metallization layer and a high-melting-point metal layer from top to bottom. The obtained double-layer / multilayer thermoelectric material device can still keep the maximum conversion efficiency Eta max to be not less than 3% even when the temperature difference is only less than 300k. The device and the method in the invention are not high to the requirement of the sintering process, are lower to the requirement on equipment, are low in production cost, and are more suitable for the requirement of industrial large-scale production.

Description

technical field [0001] The invention belongs to the technical field of thermoelectric conversion, and in particular relates to a double-layer / multilayer thermoelectric device and a preparation method thereof. Background technique [0002] As an environmentally friendly renewable energy technology, thermoelectric conversion technology has received extensive attention at home and abroad in recent years. Thermoelectric power generation technology is a technology that uses the seebeck effect of semiconductor materials to directly convert temperature differences into electricity. This technology has the advantages of high reliability, no pollution, no moving parts, no noise, etc. It has unique advantages in high-tech fields such as industrial waste heat, recycling of automobile exhaust waste heat, and special power supplies in extreme environments. [0003] The conversion efficiency η of a thermoelectric device can be expressed as follows: [0004] [0005] [0006] Among...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L35/32H01L35/18H01L35/16H01L35/34H10N10/17H10N10/01H10N10/852H10N10/853
CPCH10N10/853H10N10/852H10N10/01H10N10/17
Inventor 张波萍裴俊李敬锋孙富华董金峰唐春梅
Owner UNIV OF SCI & TECH BEIJING
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