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Terahertz microbolometer of loading resistor based multi-frequency metamaterial absorber

A technology of microbolometer and loading resistance, which is applied in the field of terahertz microbolometer, can solve the problems of low responsivity of thermal detectors, increase absorption of electromagnetic power ohmic loss, etc., and achieve the effect of improving responsivity

Inactive Publication Date: 2019-03-08
TIANJIN UNIV
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  • Abstract
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AI Technical Summary

Problems solved by technology

However, thermal detectors generally have the problem of low responsivity. Therefore, for the first time, a poly resistive structure is introduced into the terahertz metamaterial absorption structure to increase the ohmic loss absorption of electromagnetic power, thereby enhancing electromagnetic wave absorption and improving the responsivity of the detector.

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  • Terahertz microbolometer of loading resistor based multi-frequency metamaterial absorber
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  • Terahertz microbolometer of loading resistor based multi-frequency metamaterial absorber

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specific example

[0037] A specific example is given as follows:

[0038] This example presents a triple-frequency terahertz metamaterial absorption structure based on 55nm CMOS technology, operating frequencies of 910GHz, 2.58THz and 4THz, and loaded with 1.66kΩ Poly resistive load respectively. A bolometer, the embodiment of which is as follows:

[0039] 1. Based on 55nm CMOS technology, the terahertz microbolometer composed of a multi-frequency metamaterial absorption structure loaded with Poly resistors and a PTAT temperature sensing circuit includes two parts: a multi-frequency terahertz absorption structure and a PTAT temperature sensor circuit;

[0040] 2. The first part is the design of the three-band metamaterial absorption structure loaded with poly resistive load. The specific plan is to apply the material properties and size requirements of the 55nm CMOS process, and carry out the three-band metamaterial absorber structure loaded with poly resistive load in HFSS software. Design, m...

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Abstract

The invention discloses a terahertz microbolometer of a loading resistor based multi-frequency metamaterial absorber. The terahertz microbolometer includes a silicon substrate made by adopting a standard 55nmCMOS technology; the silicon substrate is provided with a multi-frequency metamaterial absorption structure which can simultaneously receive electromagnetic waves in three frequency bands andis loaded with load resistors, and a PTAT temperature sensing circuit which can receive the output signals of the multi-frequency metamaterial absorption structure; and the output end of the PTAT temperature sensing circuit can form the output end of the terahertz microbolometer. Thus, simultaneous detection on terahertz signals in three frequency bands which are 910 GHz, 2.58 THz and 4THz can berealized; and the responsivity of a detector can be enhanced by introducing load resistors, so that an effective method for multi-frequency terahertz detection can be obtained, and possible can be provided for the realization of multi-frequency high performance terahertz detection.

Description

technical field [0001] The invention relates to a room temperature microbolometer. In particular, it concerns a terahertz microbolometer based on multi-frequency metamaterial absorbers loaded with resistors. Background technique [0002] Terahertz wave is an electromagnetic wave with a frequency range between 0.1THz and 10THz. It is located between infrared light and microwave in the electromagnetic spectrum. It has many superior characteristics, mainly as follows: it has low energy and is not easy to penetrate objects. Ionization does not cause harm to the human body; many chemical substances resonate with terahertz waves after being irradiated by terahertz waves, which can screen special chemical substances; terahertz imaging has strong penetrating ability and can penetrate common packaging materials. Discover the dangerous items in it. The unique characteristics of terahertz waves make it have great development potential in security inspection, military investigation, e...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01J5/20
CPCG01J5/20G01J2005/204
Inventor 马建国王旭傅海鹏马凯学
Owner TIANJIN UNIV
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