Temperature control device for substrate tables of MPCVD equipment and temperature control method

Abstract

The invention discloses a temperature control device for substrate tables of MPCVD equipment. The temperature control device comprises the circular substrate table located at the center and the multiple concentric annular substrate tables, the same central shaft is arranged between the circular substrate table and the multiple concentric annular substrate tables, the spacing distance between everytwo adjacent substrate table is 1-10 mm, each substrate table is provided with a separate cooling water path, and the cooling water paths can control the cooling speeds of the substrate tables by controlling the flow rate and the flow of injected cooling water. By controlling the temperatures of the substrate tables, the temperatures of substrates in the diamond growing process are regulated andcontrolled, and then the temperatures of base plates are controlled in the diamond deposition process. In the diamond growing process, the surface temperatures of diamonds are controlled by controlling heat dissipation, so that the surface temperatures of all the diamonds in the deposition process are approximate, in this way, the growing rates and the quality of the diamonds produced at the samebatch are consistent, and batch production is facilitated.

Description

technical field [0001] The invention relates to the field of MPCVD (microwave plasma chemical vapor deposition) equipment, in particular to a device and method for controlling the temperature of a substrate table of an MPCVD equipment. Background technique [0002] MPCVD equipment is a common vapor deposition equipment, especially suitable for diamond production, and deposits diamond on the substrate surface on the substrate table through plasma. In order to achieve mass production, substrates (such as diamond single wafers) are placed in an array on the substrate stage. In order to achieve uniform deposition of diamond on the surface of each substrate, it is required that the temperature of the upper surface of each substrate during the entire growth process be kept as consistent as possible. However, in the diamond deposition process when the diamond film is prepared by MPCVD equipment, ideally, the plasma form is axisymmetric (see Figure 5 ), the plasma in the central re...

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Problems solved by technology

[0003] The invention patent of the existing technology 201610256111.8 "Method for preparing diamond film by using MPCVD intermediate frequency induction auxiliary heating", configures a heater through the substrate stage, and controls the temperature of the substrate by heating; it controls the temperature of the entire substrate stage, and cannot control the substrate The temperature change in a certain area of ​​the table is only suitable for the preparation of diamond films, and it cannot control the heat dissipation of each area of ​​the substrate table and adjust the temperature of the substrate to keep the temperature of all substrates consistent.

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