Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of large-area graphene and hexagonal boron nitride heterojunction with controllable number of layers

A technology of hexagonal boron nitride and graphene, applied in the field of materials, can solve the problems of multiple impurities, low output, and unfavorable industrial production.

Inactive Publication Date: 2019-03-01
RENMIN UNIVERSITY OF CHINA
View PDF5 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The current multilayer hexagonal boron nitride and graphene heterojunctions are mostly prepared by mechanical exfoliation and chemical wet transfer. These methods not only have low yields but also produce more impurities during the preparation process, which is not conducive to industrial production.
At present, the existing technology of in-situ preparation of hexagonal boron nitride and graphene heterojunction by chemical vapor deposition can only prepare single-layer hexagonal boron nitride heterojunction

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of large-area graphene and hexagonal boron nitride heterojunction with controllable number of layers
  • Preparation method of large-area graphene and hexagonal boron nitride heterojunction with controllable number of layers
  • Preparation method of large-area graphene and hexagonal boron nitride heterojunction with controllable number of layers

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0050] Embodiment 1, the method that utilizes nickel foam and copper foil substrate to prepare graphene and hexagonal boron nitride heterojunction

[0051] according to Figure 1-Figure 2 In principle, the method for preparing graphene and hexagonal boron nitride heterojunction specifically includes the following steps:

[0052](1) Soak nickel foam (specific specifications, thickness 3mm, pore diameter 0.1mm, 100 holes per inch) and copper foil (thickness 25 microns, size 3cm*4cm) with ammonium persulfate solution for 2-3 minutes , to remove surface oxides, and then rinse with deionized water.

[0053] (2) Wrap the copper foil into a box shape, cut the nickel foam into 2cm*2cm and wrap it into one end of the copper (substrate) box, then use a balance to weigh 20 mg of ammonia borane as the growth material, and put it into the quartz boat. Put the quartz boat containing the raw materials into the tube furnace together with the copper box, wherein the copper box is located in ...

Embodiment 2

[0061] Embodiment 2, the method that utilizes cobalt nanopowder and copper foil substrate to prepare graphene and hexagonal boron nitride heterojunction

[0062] (1) Copper foil (thickness 25 microns, size 3cm*4cm) is soaked in ammonium persulfate solution for 2-3 minutes to remove surface oxides, and then cleaned with deionized water.

[0063] (2) Use a balance to weigh 3mg of cobalt nanopowder (2nm) for use, then wrap the copper foil into a box shape, and sprinkle the weighed nanopowder evenly on the folded part of the copper box before sealing. Then use a balance to weigh 20 mg of ammonium borane as a growth material, and put it into a quartz boat. Put the quartz boat containing the raw materials into the tube furnace together with the copper box, where the copper box is located in the middle of the high temperature zone, and the half-folded treatment with cobalt nano powder is placed at the upstream of the air flow, and the quartz boat is placed at the source area, closed ...

Embodiment 3

[0071] Embodiment 3, using copper sheet and copper foam respectively as the comparative experiment of additional metal catalytic material

[0072] (1) Process copper sheet (thickness is 50 μm, size is 2cm*2cm), foam copper (specific specification, thickness is 3mm, aperture is 0.1mm, number of holes per inch is 100, size is 2cm*2cm) according to previous embodiment And two pieces of copper foil (thickness 25μm, size 3cm*4cm);

[0073] (2) Wrap two pieces of copper foil into a box shape, wrap the treated foam copper and copper sheet into one end of the copper (substrate) box, then use a balance to weigh 20 mg of ammonia borane as a growth material, and put it into a quartz boat Inside. Put the quartz boat containing the raw materials into the tube furnace together with the copper box, where the copper box is located in the middle of the high temperature zone (reaction zone), and place the section wrapped with foamed copper and copper sheet at the upstream of the air flow, and ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a method for preparing a graphene and hexagonal boron nitride heterojunction with a controllable number of layers. The method comprises the steps that hexagonal boron nitride isprepared on the surface of a metal thin film substrate by a chemical vapor deposition method under the catalysis of the metal thin film substrate, and graphene is formed on the surface of the prepared hexagonal boron nitride by the chemical vapor deposition method under the remote catalysis of another metal material placed on the upstream of a gas stream. The metal material has higher boron and nitrogen solubility or a higher specific surface area than the material of the metal thin film substrate. In the preparation method, the metal material is placed in the vicinity of the growth substrate, and the large-area graphene and hexagonal boron nitride heterojunction with the controllable number of layers can be prepared in situ. After the surface of the metal substrate is covered with a certain number of layers of hexagonal boron nitride, the graphene cannot continue to be catalyzed and grown on the surface of the metal substrate after the chemical catalytic activity is lost; and at thetime, the pre-placed metal material can continuously provide catalysis to grow the graphene on the surface of the hexagonal boron nitride.

Description

technical field [0001] The invention belongs to the field of materials, and in particular relates to a method for preparing a graphene-hexagonal boron nitride heterojunction with a controllable large-area layer number. Background technique [0002] Graphene is a two-dimensional crystal with a regular hexagonal symmetry structure, which is composed of a single layer of carbon atoms bonded by covalent bonds. It is the thinnest and hardest two-dimensional material known so far. Acoustic, magnetic and other aspects have broad application prospects. The heterojunction between graphene and hexagonal boron nitride can exhibit many unique and excellent physical properties, especially when hexagonal boron nitride is multilayered, it can greatly improve the carrier mobility of graphene, which is an efficient graphite It lays an excellent foundation for the application of ene electrical devices. The current multilayer hexagonal boron nitride and graphene heterojunctions are mostly pr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23C16/34C23C16/26C23C16/44
CPCC23C16/26C23C16/342C23C16/44
Inventor 陈珊珊应豪刘雯雨
Owner RENMIN UNIVERSITY OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com