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Light extraction efficiency improving UVLED structure and preparation method thereof

A technology of extraction efficiency and buffer layer, which is applied in the field of optoelectronics, can solve the problems of severe absorption of short-wavelength UV light, etc., and achieve the effect of effectively forming, increasing energy band, and increasing carrier concentration

Inactive Publication Date: 2019-02-12
SHANDONG INSPUR HUAGUANG OPTOELECTRONICS
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Problems solved by technology

However, this structure still cannot solve the serious absorption problem of short-wavelength UV light by the P-type layer.

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  • Light extraction efficiency improving UVLED structure and preparation method thereof

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Embodiment Construction

[0023] UV LED structure of the present invention, such as figure 1 As shown, it includes substrate 1, AlN buffer layer 2, n-type AlGaN layer 3, quantum well layer 4, Al z Ga 1-z N electron blocking layer 5 and p-type ohmic contact layer 6 . The p-type ohmic contact layer 6 is a diamond thin film layer. The diamond film layer is used as an ohmic contact layer structure. Because of the wide bandgap feature of the diamond film, it does not absorb the UV light emitted by the active area of ​​the quantum well, which can greatly improve the light extraction efficiency of the UV LED.

[0024] Substrate 1 The substrate is sapphire, silicon carbide, silicon, gallium nitride, aluminum nitride or rare earth compounds. al x Ga 1-x N / Al y Ga 1-y N MQW active region 4 and Al z Ga 1-z In the N electron blocking layer 5, z>y>x.

[0025] The preparation method of above-mentioned UV LED structure, comprises the following steps:

[0026] (1) Using MOCVD (vapor phase epitaxy), MBE (mol...

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Abstract

The invention discloses a light extraction efficiency improving UV LED structure and a preparation method thereof. The structure comprises a substrate, an AlN buffer layer, a non-doped AlGaN buffer layer, an n-type AlGaN layer, an AlxGa1-xN / AlyGa1-yN multi-quantum-well active area, an Mg-doped P-type AlzGa1-zN electron blocking layer and a P-type ohmic contact layer, wherein a diamond film servesas the P-type ohmic contact layer. The preparation method includes steps: (1) sequentially growing the AlN buffer layer, the non-doped AlGaN buffer layer, the n-type AlGaN layer, the AlxGa1-xN / AlyGa1-yN multi-quantum-well active area and the AlzGa1-zN electron blocking layer to obtain an AlGaN based epitaxial wafer; (2) growing a B element doped diamond film in thickness of 3-200nm on the AlzGa1-zN electron blocking layer. By the structure with the diamond film serving as the ohmic contact layer, the problem of UV absorption of the contact layer is eliminated, and UV LED light extraction efficiency can be remarkably improved. In addition, the carrier concentration is effectively increased, so that the ohmic contact layer can be formed effectively, and the device operating voltage is lowered.

Description

technical field [0001] The invention relates to a UV LED (ultraviolet light-emitting diode) structure and a preparation method for improving light extraction efficiency, belonging to the field of optoelectronic technology. Background technique [0002] In recent years, LED has gradually become one of the most valued light source technologies. On the one hand, LED has the characteristics of small size; on the other hand, LED has the power-saving characteristics of low current and low voltage drive; Strong shock resistance, long life and many other advantages. Especially in the ultraviolet region, the AlGaN-based multi-quantum well ultraviolet LED has shown great advantages, and has become one of the hot spots in the development of ultraviolet optoelectronic devices. AlGaN-based multi-quantum well UV-LED devices have broad application prospects. Ultraviolet light has great application value in screen printing, polymer curing, environmental protection, air and water purificat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/04H01L33/32H01L33/40H01L33/00
CPCH01L33/04H01L33/0075H01L33/325H01L33/40
Inventor ηŽ‹ζˆζ–°εΎηŽ°εˆšιƒ‘ε…†ζ²³θ‚–ζˆε³°
Owner SHANDONG INSPUR HUAGUANG OPTOELECTRONICS
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