GaN-based P-type grid-enhanced type HEMT device and preparation method thereof

Abstract

The invention provides a GaN-based P-type grid-enhanced type HEMT device and a preparation method thereof. The device comprises a substrate layer, a channel layer, a barrier layer, a grid electrode and a drain electrode; the channel layer is arranged on the substrate layer, the barrier layer is arranged on the channel layer, the grid electrode penetrates through the barrier layer, the drain electrode is arranged on the barrier layer, and P-type diamond is adopted as the grid electrode. The preparation method of the device comprises the following steps that 1, GaN deposition is performed on the substrate layer to form the channel layer; 2, an AlGaN layer grows on the channel layer; 3, a layer of the p-type diamond grows on the barrier layer to form the grid electrode; 4, a source electrode and the drain electrode are formed on the portions, on the two sides of the grid electrode, of the barrier layer respectively. According to the GaN-based P-type grid-enhanced type HEMT device and the preparation method thereof, the P-type diamond grid electrode is adopted, an energy band can be improved, the enhanced characteristic is achieved by using up channel electrons when the grid voltage is 0, regulation on threshold voltage of the device can be achieved, and small grid currents are kept while drain currents are increased.

Description

technical field [0001] The invention relates to a GaN-based P-type gate-enhanced HEMT (High Electron Mobility Transistor, high electron mobility transistor) device for improving ion mobility and a preparation method thereof, belonging to the technical field of semiconductors. Background technique [0002] GaN material has received more and more attention as a new type of semiconductor material. As a representative material of the third-generation semiconductor, gallium nitride has excellent electrical and optical properties. It has the advantages of wide band gap and direct band gap, high temperature and high pressure resistance, and is suitable for use in harsh environments. The main applications of gallium nitride materials are light-emitting diodes and high electron mobility transistors. Gallium nitride-based light-emitting diodes can realize wavelength changes from ultraviolet to red light, covering the entire visible light band, especially the commercialization of gall...

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Problems solved by technology

However, the operation process of this method is complicated, it is difficult to accurately control the area, and the cost is high

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