Preparation method of conductive and light transmittance perovskite quantum dot thin film

A technology of quantum dots and perovskites, which is applied in the field of preparation of conductive and light-transmitting perovskite quantum dot films, can solve the problems of difficult formation of high-precision quantum dot arrays, poor optical uniformity of conductive quantum dot films, and energy waste. It is convenient for continuous production with variable light intensity in large quantities, flexible and continuous production with variable light intensity in large quantities, and the effect of improving stability and service life

Pending Publication Date: 2019-02-01
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] All-inorganic perovskite quantum dots (CsPbX 3 ,X=Cl,Br,I), has the advantages of simple synthesis method, energy saving and high efficiency, wide color gamut coverage, high color contrast, and good display quality. However, because perovskite quantum dots are easily affected by water and oxygen molecules in the air, Destroy its molecular structure, resulting in unstable performance and reduced service life
Another difficulty in quantum dot display technology is that it is difficult to form high-precision quantum dot arrays. At present, the main preparation methods of quantum dot arrays are electrical induction method, printing method, and laser processing method. These manufacturing methods have many defects.
The electric induction method and the printing method have high precision but high cost, and the laser processing method has high efficiency but poor precision
Difficult to achieve high-quality, high-volume production of quantum dot arrays
[0004] In addition, most of the existing quantum dot films are used as photoluminescent films, which require a backlight source, and most of the energy of the light source is lost due to heat generation, resulting in energy waste; while electroluminescence is achieved by directly electrifying the quantum dot film. To cause it to emit light, this requires that the quantum dot film has conductivity. At this stage, the main method of making the quantum dot film conductive is to add conductive particles to the film. Due to the uneven distribution of conductive particles, the conductive quantum dot film prepared by this method poor uniformity of light

Method used

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Embodiment 1

[0037] A method for preparing a conductive and light-transmitting perovskite quantum dot film, comprising the following steps:

[0038] Step 1, preparation of a master template with a surface array microstructure: on a monocrystalline silicon wafer with a length of 5 cm, a width of 3 cm, and a thickness of 1 cm, ultraviolet lithography and plasma etching are used to process a master template with The master template 21 of conical hole, as the master template of surface embossing, as figure 2 As shown, the wavelength of ultraviolet light is 365nm, the power is 350W, and the power density is 30mW / cm 2 , wherein the etching gas of the plasma etching process adopts CF 4 、CH 3 F and O 2 , the cavity pressure is 50Pa, the etching power is 150W, the etching time is 2min, CH 3 The flow rate of F is 25sccm, O 2 The flow rate is 10 sccm, the diameter of the bottom surface of the conical hole is 0.2um, the height of the conical hole is 0.1um, and the distance between the central ax...

Embodiment 2

[0047] A method for preparing a conductive and light-transmitting perovskite quantum dot film, comprising the following steps:

[0048] Step 1, preparation of a master template with a surface array microstructure: on a monocrystalline silicon wafer with a length of 5 cm, a width of 3 cm, and a thickness of 1 cm, ultraviolet lithography and plasma etching are used to process a master template with The master template 21 of conical hole, as the master template of surface embossing, as figure 2 As shown, the wavelength of ultraviolet light is 360nm, the power is 340W, and the power density is 25mW / cm 2 , wherein the etching gas of the plasma etching process adopts CF 4 、CH 3 F and O 2 , the cavity pressure is 45Pa, the etching power is 140W, the etching time is 1min, CH 3 The flow rate of F is 20sccm, O 2 The flow rate is 10sccm, the diameter of the bottom surface of the conical hole is 3um, the height of the conical hole is 1.8um, and the distance between the central axes ...

Embodiment 3

[0057] A method for preparing a conductive and light-transmitting perovskite quantum dot film, comprising the following steps:

[0058] Step 1, preparation of a master template with a surface array microstructure: on a monocrystalline silicon wafer with a length of 5 cm, a width of 3 cm, and a thickness of 1 cm, ultraviolet lithography and plasma etching are used to process a master template with The master template 21 of conical hole, as the master template of surface embossing, as figure 2 As shown, the wavelength of ultraviolet light is 360nm, the power is 340W, and the power density is 25mW / cm 2 , wherein the etching gas of the plasma etching process adopts CF 4 、CH 3 F and O 2 , the cavity pressure is 55Pa, the etching power is 140W, the etching time is 1min, CH 3 The flow of F is 30sccm, O 2 The flow rate is 10 sccm, the diameter of the bottom surface of the conical hole is 5um, the height of the conical hole is 2um, and the distance between the central axes of eac...

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Abstract

The present invention discloses a preparation method of a conductive and light transmittance perovskite quantum dot thin film. The method comprises the steps of: preparation of a cavity plate with a surface array microstructure; preparation and coating of a hole transport layer; preparation and coating of a quantum dot reaction solution; imprinting of a quantum dot thin film; preparation and coating of an electron transfer layer; surface evaporation processing of the quantum dot thin film; and surface grinding processing of the quantum dot thin film. The preparation method of the conductive and light transmittance perovskite quantum dot thin film employs surface processing such as imprinting and metal evaporation to achieve preparation of the conductive thin film, employs surface grindingto achieve the light transmittance performance of the thin film; and the thin film can be light-transmitted and conductive, and the preparation method is high in efficiency, accurate in precision andlow in manufacturing low and is suitable for large-scale production.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a method for preparing a conductive and light-transmitting perovskite quantum dot film. Background technique [0002] With the rapid development of display technology, people's pursuit of display quality is getting higher and higher. Compared with traditional LEDs, quantum dots (QuantumDots), as a new type of fluorescent material, have the advantages of narrow emission spectrum, wide excitation spectrum, high quantum yield, and adjustable emission wavelength. They are widely used in lighting, solar cells and other fields. prospect. [0003] All-inorganic perovskite quantum dots (CsPbX 3 ,X=Cl,Br,I), has the advantages of simple synthesis method, energy saving and high efficiency, wide color gamut coverage, high color contrast, and good display quality. However, because perovskite quantum dots are easily affected by water and oxygen molecules in the air, Destroy its molecular ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/56H01L51/50
CPCH10K50/115H10K71/00H10K85/50
Inventor 汤勇李宗涛贾明泽丁鑫锐颜才满余彬海
Owner SOUTH CHINA UNIV OF TECH
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