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Preparation method and application of aluminum nitrogen scandium alloy target material

An alloy target, aluminum-nitrogen technology, applied in metal material coating process, ion implantation coating, coating and other directions, can solve the problems of abnormal discharge in sputtering etching area, mismatch of thin film alloy composition ratio, affecting coating performance, etc. , to improve the problem of nitrogen atom deficiency in the film layer, ensure the composition ratio of the film alloy, and the effect of high density

Active Publication Date: 2019-01-25
有研新材料股份有限公司
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Problems solved by technology

The current existing technology mainly deposits AlNS scandium films by reactive sputtering of Al-Sc alloy targets, and nitrogen gas needs to be fed continuously as a reaction gas during the sputtering process; since nitrogen gas will interact with the target material during the sputtering process Strong electrochemical reaction, the target surface is easily covered with a layer of compound, which causes abnormal discharge in the sputtering etching area and affects the coating performance; in addition, the nitrogen atoms in the manufactured nitride film are easy to be missing, resulting in a mismatch of the alloy composition of the film

Method used

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  • Preparation method and application of aluminum nitrogen scandium alloy target material
  • Preparation method and application of aluminum nitrogen scandium alloy target material

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Embodiment 1～8

[0017] According to attached figure 1 The method shown in the preparation of aluminum nitride scandium alloy target:

[0018] (1) Ingredients

[0019] According to the composition of the aluminum nitrogen scandium alloy target in Table 1, the raw material ingredients are carried out: the chemical composition of the target is (AlN) 1-x sc x , wherein, the mass content x of Sc is 1-99%, and the balance is AlN; wherein the particle size of AlN powder is 0.1-50 μm, and the particle size of Sc powder is 1-150 μm.

[0020] (2) mixed powder

[0021] Put the two raw materials in the ratio into a mixer or ball mill and mix them evenly; during the mixing process, in order to prevent powder oxidation, the mixer or ball mill is in a vacuum state or protected by an inert gas Ar.

[0022] (3) Pressure sintering

[0023] The mixed powder is sintered into a target blank by hot pressing or hot isostatic pressing, wherein the sintering temperature is 1250-1520°C, the pressure is 30-150MPa,...

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Abstract

The invention discloses a preparation method and application of an aluminum nitrogen scandium alloy target material, and belongs to the technical field of magnetic control sputtering target preparation. By using the method, the aluminum nitrogen scandium alloy target material is obtained by using AlN powder and Sc powder as raw materials through mixing, pressure sintering shaping and mechanical processing. The relative density of the obtained aluminum nitrogen scandium alloy target material is greater than 97 percent; the target material can be applied to sputtering deposition of a nitride film; in a sputtering film plating process, the stable film forming can be realized without introducing reaction gas of nitrogen gas.

Description

technical field [0001] The invention belongs to the technical field of magnetron sputtering target preparation, and in particular relates to a preparation method and application of an aluminum-nitrogen-scandium alloy target. Background technique [0002] In the fields of new microelectromechanical systems (MEMS) and radio frequency filters, AlN scandium thin films have become a current research hotspot due to their excellent piezoelectric coupling coefficients. The current existing technology mainly deposits AlNS scandium films by reactive sputtering of Al-Sc alloy targets, and nitrogen gas needs to be fed continuously as a reaction gas during the sputtering process; since nitrogen gas will interact with the target material during the sputtering process Due to the strong electrochemical reaction, the target surface is easily covered with a layer of compound, which causes abnormal discharge in the sputtering etching area and affects the coating performance; in addition, the n...

Claims

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Application Information

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IPC IPC(8): C23C14/34C23C14/35C22C1/05C22C1/10C22C32/00C22C29/16C22C28/00
CPCC22C1/05C22C1/051C22C28/00C22C29/16C22C32/0068C23C14/3414C23C14/35
Inventor 丁照崇李勇军何金江王兴权雷继锋庞欣贺昕刘晓
Owner 有研新材料股份有限公司
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