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Magnetic Tunnel Junction Device and Random Memory Device Based on Artificial Antiferromagnetic Pinned Layer

一种人工反铁磁、磁性隧道结的技术,应用在电固体器件、磁场控制的电阻器、电磁设备的零部件等方向,能够解决固定层铁磁态变化、无法稳定写入数据等问题,达到增强反铁磁耦合强度、抗干扰能力强、开拓应用空间的效果

Active Publication Date: 2021-02-19
XI AN JIAOTONG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the spin polarization current applied to spin-transfer torque-random memory is generally in the range of 10 7 A / cm 2 Left and right, a larger spin-polarized current will limit the arrangement density of the memory cell array. In order to increase the arrangement density of the memory cell array, the thickness of the pinned layer can be reduced. At this time, a larger current may cause the ferromagnetic state of the pinned layer to collapse. changes, unable to write data stably

Method used

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  • Magnetic Tunnel Junction Device and Random Memory Device Based on Artificial Antiferromagnetic Pinned Layer
  • Magnetic Tunnel Junction Device and Random Memory Device Based on Artificial Antiferromagnetic Pinned Layer
  • Magnetic Tunnel Junction Device and Random Memory Device Based on Artificial Antiferromagnetic Pinned Layer

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Embodiment Construction

[0041] The technical solutions of the present invention will be described in detail below in conjunction with the accompanying drawings and examples. The following examples relate to a magnetic random access memory device that enhances the antiferromagnetic coupling of an artificial antiferromagnetic pinned layer through electric field regulation, but does not constitute any limitation on the present invention. in accordance with.

[0042] figure 1 Demonstration of the paper "Low voltage switching of magnetism through ionic liquidgating control of RKKY interaction in FeCoB / Ru / FeCoB and (Pt / Co)2 / Ru / (Co / Pt)2multilayers" in the paper "Low voltage switching of magnetism through ionic liquidgating control of RKKY interaction in FeCoB / Ru / FeCoB and (Pt / Co)2 / Ru / (Co / Pt)2multilayers" Variation of ferromagnetic coupling strength J. When the ferromagnetic layer is [Pt(0.88nm)|Co(0.70nm)] 2 , the degree of interface disorder is 0.5, and the thickness of Ru is 0.66nm, the artificial antif...

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Abstract

The invention discloses a magnetic tunnel junction device and a random storage device based on an artificial antiferromagnetic fixed layer. The device relates to a multilayer film structure that can be used as a fixed layer, that is, an artificial antiferromagnetic device. The artificial antiferromagnetic device can be adjusted by the electric field to enhance the antiferromagnetic coupling. The artificial antiferromagnetic device can be used as the fixed layer of the magnetic tunnel junction, and the antiferromagnetic coupling is enhanced under the action of the electric field to ensure that the fixed layer is close to the potential barrier. The ferromagnetic layer of the layer does not flip, thereby realizing stable writing of data. The magnetic tunnel structure based on the artificial antiferromagnetic pinned layer forms a magnetic random access memory device, which achieves the purpose of stably writing data through the joint action of electric field and current. It has a simple structure, high density, low power consumption, fast speed, and radiation resistance. , Non-volatile advantages.

Description

technical field [0001] The present invention relates to circuits and devices with magnetic / ferromagnetic materials or structures and their applications, more specifically, to a magnetic random access memory based on an artificial antiferromagnetic pinned layer controlled by electricity and using an electric field for assisted erasing and writing. Background technique [0002] A magnetic tunnel junction (called MTJ) is composed of two layers of magnetic metal (such as iron, cobalt, nickel) and an ultra-thin insulating layer (such as aluminum oxide, or magnesium oxide) sandwiched between the two magnetic metal layers. If a bias voltage is applied between the two magnetic metal layers, since the insulating layer is very thin, electrons can tunnel through its potential barrier. Under a given bias voltage, the size of the tunneling current / tunneling resistance depends on the relative orientation of the magnetization in the two ferromagnetic layers. This phenomenon is called tunne...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/08G11C11/16
CPCG11C11/161H10N50/10H10B61/22H10N50/85H10N50/80
Inventor 闵泰周雪王蕾
Owner XI AN JIAOTONG UNIV
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