Magnetic Tunnel Junction Device and Random Memory Device Based on Artificial Antiferromagnetic Pinned Layer
一种人工反铁磁、磁性隧道结的技术,应用在电固体器件、磁场控制的电阻器、电磁设备的零部件等方向,能够解决固定层铁磁态变化、无法稳定写入数据等问题,达到增强反铁磁耦合强度、抗干扰能力强、开拓应用空间的效果
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment Construction
[0041] The technical solutions of the present invention will be described in detail below in conjunction with the accompanying drawings and examples. The following examples relate to a magnetic random access memory device that enhances the antiferromagnetic coupling of an artificial antiferromagnetic pinned layer through electric field regulation, but does not constitute any limitation on the present invention. in accordance with.
[0042] figure 1 Demonstration of the paper "Low voltage switching of magnetism through ionic liquidgating control of RKKY interaction in FeCoB / Ru / FeCoB and (Pt / Co)2 / Ru / (Co / Pt)2multilayers" in the paper "Low voltage switching of magnetism through ionic liquidgating control of RKKY interaction in FeCoB / Ru / FeCoB and (Pt / Co)2 / Ru / (Co / Pt)2multilayers" Variation of ferromagnetic coupling strength J. When the ferromagnetic layer is [Pt(0.88nm)|Co(0.70nm)] 2 , the degree of interface disorder is 0.5, and the thickness of Ru is 0.66nm, the artificial antif...
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com