Micro-channel plate and method for preparing Ni-doped Al2O3 high-resistance film on inner wall of micro-channel plate

A technology of microchannel plate and thin film, which is applied in the field of thin film doping, can solve the problems of resistivity change and unstable performance of microchannel plate, and achieve the effect of constant resistivity, excellent thermal stability of thin film, and improved performance

Active Publication Date: 2019-01-11
XI'AN INST OF OPTICS & FINE MECHANICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In order to solve the technical problem that the performance of the microchannel plate is unstable due to the large resistivity change of the surface film of the existing microchannel plate under high temperature conditions, the present invention provides a microchannel plate and the preparation of Ni-doped Al on the inner wall of the microchannel plate 2 o 3 High resistance thin film method

Method used

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  • Micro-channel plate and method for preparing Ni-doped Al2O3 high-resistance film on inner wall of micro-channel plate
  • Micro-channel plate and method for preparing Ni-doped Al2O3 high-resistance film on inner wall of micro-channel plate
  • Micro-channel plate and method for preparing Ni-doped Al2O3 high-resistance film on inner wall of micro-channel plate

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Experimental program
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Effect test

Embodiment 1

[0054] Place the microchannel plate in RCA standard cleaning solution SC-2 (HCl: H 2 o 2 :H 2 O=1:1:5), after ultrasonic cleaning at 85°C for 10 minutes, placed in HF solution (HF:H 2 (0=1:50) after ultrasonic cleaning, put the microchannel plate into the atomic layer deposition chamber, and vacuumize to 10 -1 Pa, and the temperature of the deposition chamber and the microchannel plate was heated to 150 °C, and the Al 2 o 3 deposition, i.e. TMA / Ar / H 2 O / Ar=(0.1s / 5s / 0.1s / 5s), after 12 cycles, 1 cycle of Ni deposition, namely NiCp 2 / Ar / H 2 O / Ar / H 2 / Ar=(4s / 10s / 8s / 10s / 15s / 10s), 12 times Al 2 o 3 After the deposition cycle and 1 Ni deposition cycle are 1 large cycle, the deposition is stopped after 450 large cycles, and after the deposition chamber drops to room temperature, the deposition chamber is opened, and the deposited Ni-doped Al 2 o 3 Thin film microchannel plate.

Embodiment 2

[0056] Place the microchannel plate in RCA standard cleaning solution SC-2 (HCl: H 2 o 2 :H 2 O=1:1:5), after ultrasonic cleaning at 85°C for 10 minutes, placed in HF solution (HF:H 2 (0=1:50) after ultrasonic cleaning, put the microchannel plate into the atomic layer deposition chamber, and vacuumize to 10 -2 Pa, and the temperature of the deposition chamber and the microchannel plate was heated to 180°C, and the Al 2 o 3 deposition, i.e. TMA / Ar / H 2 O / Ar=(0.1s / 5s / 0.1s / 5s), after 11 cycles, 1 cycle of Ni deposition, namely NiCp 2 / Ar / H 2 O / Ar / H 2 / Ar=(4s / 10s / 8s / 10s / 15s / 10s), 11 times Al 2 o 3 After the deposition cycle and 1 Ni deposition cycle is a large cycle, the deposition is stopped after 500 large cycles, and after the deposition chamber is lowered to room temperature, the deposition chamber is opened, and the deposited Ni-doped Al 2 o 3 Thin film microchannel plate.

Embodiment 3

[0058] Place the microchannel plate in RCA standard cleaning solution SC-2 (HCl: H 2 o 2 :H 2 O=1:1:5), after ultrasonic cleaning at 85°C for 10 minutes, placed in HF solution (HF:H 2 (0=1:50) after ultrasonic cleaning, put the microchannel plate into the atomic layer deposition chamber, and vacuumize to 10 -3 Pa, and the temperature of the deposition chamber and the microchannel plate was heated to 200°C, and the Al 2 o 3 deposition, i.e. TMA / Ar / H 2 O / Ar=(0.1s / 5s / 0.1s / 5s), after 10 cycles, 1 cycle of Ni deposition, namely NiCp 2 / Ar / H 2 O / Ar / H 2 / Ar=(4s / 10s / 8s / 10s / 15s / 10s), 10 times Al 2 o 3 After the deposition cycle and 1 Ni deposition cycle are 1 large cycle, the deposition is stopped after 550 large cycles, and after the deposition chamber is lowered to room temperature, the deposition chamber is opened, and the deposited Ni-doped Al 2 o 3 Thin film microchannel plate.

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Abstract

The invention relates to a micro-channel plate and a method for preparing a Ni-doped Al2O3 high-resistance film on an inner wall of the micro-channel plate. The Ni-doped Al2O3 high-resistance film isacquired by depositing different component materials on the inner wall of the micro-channel plate through an atomic layer deposition method; when depositing, the deposition times of Al2O3 and Ni are controlled in a great circulation so as to control a Ni-doped ratio, thus the resistivity of the film can be precisely controlled with the range of 106-1010 omega.cm; and the thickness of the film is controlled by controlling the circulation times of the great circulation. The resistivity of the prepared film is basically kept constant in a high temperature working environment or after high temperature annealing; and the technical problem of unstable performance of the micro-channel plate caused by great change of the resistivity of the surface film of the existing micro-channel plate under high temperature conditions is solved.

Description

technical field [0001] The invention belongs to the technical field related to film doping, and relates to a method for preparing a high-resistance film in the technical field of photoelectric materials, in particular to a Ni-doped Al 2 o 3 A method for preparing a high-resistance thin film. Background technique [0002] After the traditional lead silicate glass microchannel plate has been processed by a complex preparation process, the surface roughness of the inner wall is high, which will lead to problems such as reduced gain and increased noise, which limits the further improvement of its performance. Through the thin film preparation process in the microchannel plate The functional layer prepared on the inner wall can further improve the performance of the microchannel plate, and the functional layer of the microchannel plate can be prepared separately by using the atomic layer deposition (Atomic Layer Deposition) film preparation technology, which can greatly improve ...

Claims

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Application Information

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IPC IPC(8): C23C16/455C23C16/40C23C16/06
CPCC23C16/06C23C16/403C23C16/45527
Inventor 郭俊江彭波郭海涛许彦涛朱香平曹伟伟邹永星陆敏
Owner XI'AN INST OF OPTICS & FINE MECHANICS - CHINESE ACAD OF SCI
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