Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Four-mode dual-band filter based on a single rectangular SIW structure

A dual-band filter and filter technology, applied in the field of electronic information, can solve problems such as no source negative coupling, and achieve the effects of improving stop-band attenuation, low manufacturing process requirements, and high frequency selectivity

Inactive Publication Date: 2019-01-04
HANGZHOU DIANZI UNIV
View PDF6 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The previous source negative coupling was more achieved by adding microstrip lines to the input and output feeders, introducing additional circuits, and did not make reasonable use of multiple inherent modes of the cavity to achieve source negative coupling.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Four-mode dual-band filter based on a single rectangular SIW structure
  • Four-mode dual-band filter based on a single rectangular SIW structure
  • Four-mode dual-band filter based on a single rectangular SIW structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0038] The present invention will be further described below in conjunction with accompanying drawing.

[0039] Such as figure 1As shown in (b), the filter is composed of a single-layer Rogers5880 dielectric plate with a thickness of h, and the upper and lower surfaces of the dielectric plate are covered with metal layers; from figure 1 As can be seen in (a), the filter structure consists of only a single rectangular SIW cavity, in figure 1 There are two types of metal vias in (a), one is a plurality of first metal pillars forming the electric wall of the resonant cavity, and the other is a plurality of second and third metal pillars forming a disturbance metal via. The introduced perturbation metal vias are for rationally utilizing the first four modes of a single rectangular SIW cavity, therefore, perturbation metal vias play a key role in the design of the filter of the present invention.

[0040] The "cross-shaped" second metal pillar is located in the center of the rect...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a dual-band bandpass filter based on a single rectangular SIW structure. The present invention is based on a rectangular SIW structure and controls the first four resonant modes of the filter, namely TE101, TE201, TE301 and TE401 modes, by using a method of metal via disturbance. TE101 and TE201 combine to form a first passband, TE301 and TE401 combine to form a second passband. In addition, the bandwidth and spacing of the two passbands can be tuned relatively independently by disturbing vias through movement. At the same time, the offset input and output feeders introduce four transmission zeros into the filter, which improves the stopband attenuation of the filter. By utilizing single SIW cavity mode reasonably, it meets the miniaturization requirement of modernmulti-standard RF system and solves the problems of large size and complex design of a traditional dual-band filter.

Description

technical field [0001] The invention belongs to the field of electronic information technology, specifically a quadruple-mode dual-band filter realized by using metal through-hole disturbance in a single rectangular substrate integrated waveguide (SIW) structure, which is a kind of rational utilization of cavity mode and good performance. Novel dual-band RF filter with stopband attenuation. Background technique [0002] With the rapid development of modern wireless communication systems, highly compact and easy-to-integrate high-performance microwave and millimeter-wave bandpass filters (BPFs) are urgently needed. In the last decade, the emerging substrate-integrated waveguide (SIW) technology has taken a prominent place in the design of complex BPFs due to its advantages of low loss, low cost, high power handling capability, and high-density integration. [0003] Meanwhile, with the development of wireless communication systems, dual-band or multi-band BPFs play a vital ro...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01P1/203
CPCH01P1/203
Inventor 刘晓尚吴薇杨增郭君
Owner HANGZHOU DIANZI UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com