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Self-supporting indium film with mass thickness ranging from 600 to 1200 mu g/cm<2> and its preparation method thereof

A quality thickness, self-supporting technology, applied in the direction of ion implantation plating, coating, metal material coating process, etc., can solve problems such as poor flatness, cracks in Ir deposition layer, target film curling, etc., and achieve the effect of avoiding cracking

Active Publication Date: 2019-01-04
固镇科安创蚌信息科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Chinese patent CN106868460A uses the focused heavy ion sputtering method to prepare a self-supporting Ir target with a mass thickness of 400-2000 μg / cm2, which solves the technical problems of curling and poor flatness of the target film in the prior art preparation process
However, due to the large residual stress between the Ir deposition layer and the copper base during the sputtering process, releasing the stress during dissolution and separation will cause cracks in the Ir deposition layer, which will affect the use of the self-supporting target.
In addition, the preparation steps of this invention are complicated. When depositing the Ir deposition layer, two steps are used. It is necessary to take the Ir deposition layer out of the focused heavy ion sputtering deposition system and put it into the deposition system again.

Method used

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  • Self-supporting indium film with mass thickness ranging from 600 to 1200 mu g/cm&lt;2&gt; and its preparation method thereof
  • Self-supporting indium film with mass thickness ranging from 600 to 1200 mu g/cm&lt;2&gt; and its preparation method thereof
  • Self-supporting indium film with mass thickness ranging from 600 to 1200 mu g/cm&lt;2&gt; and its preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0044] A mass thickness of 800μg / cm 2 The preparation method of self-supporting indium thin film, comprises the following steps: select the glass of 2cm * 2cm * 0.5cm as substrate 1, adopt electron beam thermal evaporation method to deposit sodium chloride release agent 2, described sodium chloride release agent 2 Thickness 250nm;

[0045] The glass substrate 1 is placed on the workpiece table 9, the zinc oxide target is used as the 90-degree FCVA cathode 5, and the indium target is used as the straight tube FCVA cathode 13, and the deposition device is evacuated through the vacuum port 8, so that the inside of the reaction chamber 12 Vacuum degree is 1.0×10 -4 Pa; then pass into argon gas from the inlet 11, so that the vacuum degree in the reaction chamber 12 is 2Pa; open the 90-degree magnetic filter cathode vacuum arc (FCVA) system and set the deposition parameters as: the arc starting current is 60A, and the magnetic field of the elbow 1.0A, beam current 40mA, negative b...

Embodiment 2

[0050] A mass thickness of 1000μg / cm 2 The preparation method of the self-supporting indium thin film comprises the following steps: selecting 2cm×2cm×0.5cm single crystal silicon as the substrate 1, adopting the electron beam thermal evaporation method to deposit the sodium chloride release agent 2, and the sodium chloride release agent The thickness of the agent 2 is 230nm; the monocrystalline silicon substrate 1 is placed on the workpiece table 9, the zinc oxide target is used as the 90-degree FCVA cathode 5, and the indium target is used as the straight tube FCVA cathode 13, and the deposition device is pumped through the vacuum port 8. Vacuum, so that the degree of vacuum in the reaction chamber 12 is 1.5 × 10 -4Pa; then pass argon gas from the air inlet 11, so that the vacuum degree in the reaction chamber 12 is 1.5Pa; open the 90-degree magnetic filter cathode vacuum arc (FCVA) system and set the deposition parameters as follows: the arc starting current is 70A, the elb...

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Abstract

The invention discloses a self-supporting indium film with mass thickness ranging from 600 to 1200 mu g / cm<2> and its preparation method thereof. The preparation method includes the steps of (1), depositing a sodium chloride release agent on the surface of a substrate; (2), depositing a zinc oxide buffer film on the surface of the substrate through a 90-degree magnetron filtered cathode vacuum arc(FCVA) system; (3), turning a sample 180 DEG, depositing the indium film again through a straight magnetron FCVA system; (4), subjecting the treated substrate to stripping in a container containing ethanol solution; (5), picking the indium film through a fishing plate to obtain the self-supporting indium film with mass thickness ranging from 600 to 1200 mu g / cm<2>. The self-supporting indium filmwith mass thickness ranging from 600 to 1200 mu g / cm<2> has low stress, is uniform and compact, and the preparation method is simple.

Description

technical field [0001] The invention relates to the field of film preparation, in particular to a film with a mass thickness of 600-1200 μg / cm 2 Self-supporting indium thin film and its preparation method. Background technique [0002] A self-supporting film, as opposed to a film with a substrate, refers to a film that is not supported by a substrate during use. The commonly used self-supporting film preparation technology is to coat or grow a soluble release agent on a solid polished surface (such as a polished silicon wafer or glass sheet), deposit a film, and then dissolve the release agent. [0003] In addition to being self-supporting, the self-supporting film is also required to have the characteristics of no defect, uniform flatness, purity, large area, and low stress. Chinese patent CN106868460A adopts the focused heavy ion sputtering method to prepare a self-supporting Ir target with a mass thickness of 400-2000 μg / cm2, which solves the technical problems of curli...

Claims

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Application Information

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IPC IPC(8): C23C14/02C23C14/32C23C14/14
CPCC23C14/0005C23C14/024C23C14/14C23C14/325
Inventor 欧志清
Owner 固镇科安创蚌信息科技有限公司
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