Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A kind of microetching method of cadmium telluride nanocrystalline film

A nanocrystalline and cadmium telluride technology, applied in sustainable manufacturing/processing, climate sustainability, semiconductor devices, etc., can solve problems affecting battery performance, device leakage, damage to PN junctions, etc., to avoid device leakage and reduce The effect of the Schottky barrier

Active Publication Date: 2020-05-22
SOUTH CHINA UNIV OF TECH
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] However, the above two traditional etching processes are only suitable for forming dense and uniform cadmium telluride thin films at the micron scale, otherwise it will easily lead to preferential etching
Since the film formed by cadmium telluride nanocrystals has a lot of grain boundaries, if the etchant is soaked in etching solution, the reaction will mainly be concentrated at the grain boundaries of the film, and the engraving at the grain boundaries will make the grain boundaries There will be a gap at the place, so that more solution will penetrate into the gap, and the deeper area of ​​the film will be engraved. The etching solution will enter the film along the grain boundary and damage the PN junction, causing device leakage, which will seriously affect the performance of the battery.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of microetching method of cadmium telluride nanocrystalline film
  • A kind of microetching method of cadmium telluride nanocrystalline film
  • A kind of microetching method of cadmium telluride nanocrystalline film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] (1) CdTe nanocrystals (S.Sun, H.M.Liu, Y.P.Gao, D.H.Qin, J.Materials.Chemistry., 2012,517,6853-6856.) were prepared by solvothermal method, and then dissolved in an organic solvent to obtain Black solution, i.e. nanocrystalline solution, the nanocrystalline solution is deposited on the window layer (by sequentially stacked ITO glass substrate, ZnO layer, CdSe layer), then immersed in saturated methanol solution of cadmium chloride, treated at 350°C for a period of time to obtain a nanocrystalline monolayer, and then processed by layer-by-layer solution, which can effectively reduce interface defects and internal stress A uniform and dense photoactive layer (cadmium telluride nanocrystal thin film); the photoactive layer is formed by stacking one or more layers of cadmium telluride nanocrystals.

[0033] (2) Place the bromomethanol etching solution with a volume concentration of 5‰ on the heating stage, and place the cadmium telluride nanocrystalline film covered with th...

Embodiment 2

[0040] (1) CdTe nanocrystals (S.Sun, H.M.Liu, Y.P.Gao, D.H.Qin, J.Materials.Chemistry., 2012,517,6853-6856.) were prepared by solvothermal method, and then dissolved in an organic solvent to obtain Black solution, i.e. nanocrystalline solution, the nanocrystalline solution is deposited on the window layer (by sequentially stacked ITO glass substrate, ZnO layer, CdSe layer), then immersed in saturated methanol solution of cadmium chloride, treated at 350°C for a period of time to obtain a nanocrystalline monolayer, and then processed by layer-by-layer solution, which can effectively reduce interface defects and internal stress A uniform and dense photoactive layer (cadmium telluride nanocrystal thin film); the photoactive layer is formed by stacking one or more layers of cadmium telluride nanocrystals.

[0041] (2) Put the phosphoric acid nitric acid mixed etching solution (nitric acid: phosphoric acid: water = 1:70:29, volume ratio) on the heating stage, and place the cadmium ...

Embodiment 3

[0048] (1) CdTe nanocrystals (S.Sun, H.M.Liu, Y.P.Gao, D.H.Qin, J.Materials.Chemistry., 2012,517,6853-6856.) were prepared by solvothermal method, and then dissolved in an organic solvent to obtain Black solution, i.e. nanocrystalline solution, the nanocrystalline solution is deposited on the ITO glass substrate by spin coating, brush coating, spray coating, printing (preferably screen printing) or inkjet printing, and then immersed in saturated methanolic cadmium chloride solution Treatment, high temperature treatment at 350°C for a period of time to obtain a nanocrystalline monolayer, and then solution processing by layer-by-layer superposition to obtain a uniform and dense cadmium telluride nanocrystalline film that can effectively reduce interface defects and internal stress.

[0049] (2) Put the bromomethanol etching solution with a volume concentration of 1‰ on the heating stage, and place the cadmium telluride nanocrystalline film covered with the mask horizontally above...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
electron work functionaaaaaaaaaa
Login to View More

Abstract

The invention belongs to the field of photoelectric devices and discloses a microetching method of a cadmium telluride nanocrystalline thin film. A mask plate is cover on that cadmium telluride nanocrystalline thin film, and the surface of the cadmium telluride nanocrystalline thin film is micro-etched by the steam of the etching solution to obtain the etch cadmium telluride nanocrystalline thin film. The method of the invention can avoid the problem of device leakage caused by damaging the PN junction of the thin film, and simultaneously reduce the Schottky barrier between the high work function cadmium telluride and the electrode.

Description

technical field [0001] The invention belongs to the field of photoelectric devices, and in particular relates to a microetching method for a cadmium telluride nanocrystal film. Background technique [0002] The solution processing method of cadmium telluride quantum dot thin film solar cells is an important technology for solar power generation, and it is one of the main driving forces for the preparation of low-cost cells in the photovoltaic market. Thin-film solar cells are prepared by layer-by-layer with multi-layer thin films, and have a relatively simple structure, which is suitable for large-area and rapid production. Cadmium telluride belongs to group II-VI direct bandgap semiconductors, the band gap at room temperature is 1.45eV, its spectral response matches the solar spectrum very well, and the absorption coefficient of cadmium telluride is relatively high, which can reach 10 5 It has high quantum efficiency in a spectral range from the ultraviolet region to the i...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCH01L31/1828Y02P70/50
Inventor 覃东欢郭秀珍容志滔罗恺楹
Owner SOUTH CHINA UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com