Coupled inductor structure

Abstract

A coupling inductance structure for an integrated circuit is disclosed, At least two metal couple structures are use as inductors of transformer devices in integrate circuits, two ends of each metal coupling structure are respectively connected with metal layers on a semiconductor device substrate, and different coupling inductors are obtained between metal coupling structures through spatial positional relationship under the condition of satisfying integrated circuit process. The invention utilizes bonding wires bonded on the semiconductor device substrate to form the primary and secondary inductors of the transformer device, thereby avoiding the limitation of the metal layer process in the integrated circuit field. The coupling inductor can make full use of all the space in the integrated circuit layout to improve the chip area utilization. Primary and secondary inductors can be fabricated to adapt to the layout of the shape, as far as possible using the shape of the primary and secondary inductors to provide the best coupling mutual inductance.

Description

technical field [0001] The invention relates to the field of integrated circuits, in particular to a coupled inductance structure for integrated circuits. Background technique [0002] When manufacturing integrated circuit layout structures in the field of integrated circuits, balun devices or transformer devices are often used. A balun device or a transformer device usually realizes mutual inductance by coupling coils, and the common ones are lateral coupling mechanism and longitudinal (up and down) coupling mechanism. These two commonly used coupling mechanisms have the same disadvantages. The mutual induction coil is implemented using the metal layer of the semiconductor device, and the thickness and width of the coil are limited by the integrated circuit process. The thickness of the metal layer in the field of integrated circuits is generally less than 4 microns, and the width is less than 20 microns. The quality factor of the coupled inductance formed under the limit...

AI Technical Summary

Problems solved by technology

The quality factor of the coupled inductance formed under the limitation of the process is not ideal, and the coupled inductance generally does not exceed 15nH, which often cannot meet the design requirements

Further, since the coupling coil will form self-capacitance, the self-resonant frequency cannot be too high, which limits the frequency of use

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