Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for dispersing nanowires based on epoxy resin drawing film

An epoxy resin and nanowire technology, applied in the fields of nanotechnology, nanotechnology, nanostructure manufacturing, etc., can solve problems such as complex processes, and achieve the effect of simple operation process, easy implementation and simple operation.

Inactive Publication Date: 2012-11-07
HEFEI UNIV OF TECH
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In order to avoid the shortcomings of the above-mentioned prior art, the present invention provides a method of drawing and dispersing nanowires based on epoxy resin, so as to overcome the defects of pre-assembled electrodes, external electric field or magnetic field, and complicated process.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for dispersing nanowires based on epoxy resin drawing film
  • Method for dispersing nanowires based on epoxy resin drawing film
  • Method for dispersing nanowires based on epoxy resin drawing film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] Follow the steps below to disperse CdS nanowires on a silicon substrate.

[0027] Step 1: Ultrasonic clean the silicon wafer in alcohol for 10 minutes at room temperature to remove the surface oil, then rinse with distilled water and set aside;

[0028] Step 2: Add 3-4mg of CdS nanowires and 4ml of tetrahydrofuran solution into a test tube with a volume of 15ml, and then perform ultrasonic dispersion treatment at room temperature; then inject 0.7ml of KH560 silicon coupling agent into the tetrahydrofuran solution containing nanowires , stir evenly to obtain a coupling agent treatment solution, in which the nanowires and the inorganic reactive groups of the coupling agent unite to form chemical bonds;

[0029] Step 3: Inject 3.2g of epoxy resin E-44 into the coupling agent treatment solution and stir for 5 minutes to completely dissolve epoxy resin E-44; then inject 2.0g of polyamide resin 650# into it and stir, The polyamide resin 650# was completely dissolved to obtai...

Embodiment 2

[0034] Disperse CdS nanowires on a glass flake substrate as follows.

[0035] Step 1: Ultrasonic clean the glass sheet in alcohol for 10 minutes at room temperature to remove the surface oil, then rinse with distilled water and set aside;

[0036] Step 2: same as step 2 in Example 1;

[0037] Step 3: Inject 3.2g of epoxy resin E-44 into the coupling agent treatment solution and stir for 5 minutes to completely dissolve epoxy resin E-44; then inject 2.0g of 650# polyamide resin into it and stir, Dissolving the polyamide resin to obtain nanowire suspension, the whole process is carried out in a water bath at 35°C; the weight ratio of epoxy resin to polyamide resin is 1.6:1;

[0038] Step 4: Put the nanowire suspensions dissolved with epoxy resin E-44 and polyamide resin 650# respectively in a water bath, set the temperature of the water bath to 35°C, and the water bath time to 21 hours, and ensure that the test tube is well sealed , to prevent the volatilization of tetrahydrof...

Embodiment 3

[0042] Follow the steps below to disperse CdS nanowires on a silicon substrate.

[0043] Step 1: Same as Step 1 in Example 1;

[0044] Step 2: Add 3-4mg of CdS nanowires and 4ml of tetrahydrofuran solution into a test tube with a volume of 15ml, then perform ultrasonic dispersion treatment at room temperature, then add 0.4ml of coupling agent KH560 into the tetrahydrofuran solution containing nanowires, and stir evenly A coupling agent treatment solution is obtained, in which the nanowires and the inorganic reactive groups of the coupling agent unite to form strong chemical bonds;

[0045] Step 3: Inject 2.8g of E-44 epoxy resin into the coupling agent treatment solution, stir for 5 minutes to completely dissolve the epoxy resin, then inject 2.8g of 650# polyamide resin into it and stir to make the polyamide The amide resin is completely dissolved to obtain a suspension of nanowires, and the whole process is carried out in a water bath at 25°C; the weight ratio of epoxy resin...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for dispersing nanowires based on an epoxy resin drawing film, which is characterized by comprising the following steps of: firstly dispersing the nanowires into tetrahydrofuran solution, and again an injecting silane coupling agent to combine the nanowires with an inorganic reaction group of the silane coupling agent to form a chemical bond; injecting epoxy resininto a silane coupling agent treating liquid, stirring for dissolving, injecting polyamide resin, stirring for dissolving the mixture into a nanowire suspension liquid; placing the nanowire suspension liquid in water bath to cure the resins, and combining the resins and the inorganic reaction group of the silane coupling agent to form the chemical bond; and finally forming the film by lifting anddrawing through a die, and transferring a resin film to a silicon wafer or a glass sheet matrix to realize the dispersion of the nanowires. The invention has the advantages of simple method, low costand easy implementation.

Description

technical field [0001] The invention relates to a method for dispersing nanowires, more specifically, a method for drawing a film with epoxy resin to disperse nanowires on a large scale, and is especially used in the industry of assembling nanometer devices. Background technique [0002] With the continuous maturity of nanomaterial synthesis technology and people's in-depth understanding of the unique properties of nanomaterials, the research focus of nanotechnology is gradually developing towards the practicality, deviceization and multifunctionalization of nanomaterials. In recent years, one-dimensional semiconductor nanomaterials represented by nanowires have gradually attracted people's attention for their potential application in the construction of micro / nanoelectronic devices. Since the United States "Science" (Science, 2001, volume 294, pages 1313-1317) has reported the basic principle of using p-type Si nanowires and n-type GaN nanowires as structural units to const...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): B82B3/00
Inventor 蒋阳吴波李山鹰蓝新正吴翟刘新梅
Owner HEFEI UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com