Semiconductor structure, and formation method thereof

Abstract

The invention provides a semiconductor structure, and a formation method thereof. The formation method of the semiconductor structure includes the steps: a cobalt layer is formed; the cobalt layer isplanarized by a chemical mechanical grinding process, and the grinding lubricant utilized by the chemical mechanical grinding process is a weakly alkaline grinding lubricant; and the solutions utilized by the cleaning operation and the conveying operation in the chemical mechanical grinding process are all weakly alkaline solutions. The formation method of the semiconductor structure adopts the weakly alkaline grinding lubricant, and the solutions utilized by the cleaning operation and the conveying operation in the chemical mechanical grinding process are weakly alkaline solutions, so that compared with a scheme of performing the cleaning operation and the conveying operation by using an acidic grinding lubricant and deionized water, the formation method of the semiconductor structure canimprove the problem of corrosion of the cobalt layer so as to improve the grinding quality of the cobalt layer to improve the electrical properties of the semiconductor structure.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] In a semiconductor device, reducing the RC delay (Resistance Dapacitance Delay) can improve the performance of the semiconductor device. With the development of semiconductor technology and the advancement of technology nodes, the functions of devices are becoming more and more powerful, the integration of devices is getting higher and higher, and the feature size (Critical Dimension, CD) of devices is getting smaller and smaller. Correspondingly, the RC is further reduced. Delay has become one of the important measures to improve the performance of semiconductor devices. [0003] An interconnection structure of a semiconductor device includes contact hole plugs. At present, in order to reduce the RC delay, the material used for the contact hole plug is usually a material with a smal...

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Problems solved by technology

[0004] However, even if a material with a lower resistance value is selected for the contact hole plug, the electrical performance of the semiconductor structure still needs to be improved.

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