Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for removing cap layer in SiC nanostructure prepared by anodization

A nanostructure and anodizing technology, applied in the field of materials, can solve the problems of functional application obstacles, reduced pore openness, and the existence of cap layer structure, etc., to shorten the etching time, improve the openness, and improve the performance.

Active Publication Date: 2018-12-04
NINGBO UNIVERSITY OF TECHNOLOGY
View PDF2 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, although there have been many reports on the preparation of SiC nanoporous structure materials based on the anodic oxidation method, the top of the SiC nanoporous structure prepared according to this process always has a cap layer structure.
The cap layer covers a uniform pore structure, which greatly reduces the openness of the pores and creates a great obstacle to its functional application, which needs to be removed urgently

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for removing cap layer in SiC nanostructure prepared by anodization
  • Method for removing cap layer in SiC nanostructure prepared by anodization
  • Method for removing cap layer in SiC nanostructure prepared by anodization

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] Weigh 13gNH 4 HF powder dissolved in 20 mL of deionized water, configured as saturated NH 4 HF solution.

[0036] The etching solution is prepared by mixing hydrofluoric acid, ethanol and hydrogen peroxide in a volume ratio of 3:6:1.

[0037] The industrial-grade SiC wafer was cut into small pieces with a size of 0.7 × 1.5 cm, and ultrasonically cleaned in alcohol and deionized water for 10 min respectively. The cleaned SiC wafer was placed in an ethanol solution containing HF acid (the volume ratio of HF to ethanol is 2: 1) Soak in 2 minutes, take out and dry in 40℃ oven for 10 minutes.

[0038] Clamp the cleaned and dried 4H-SiC wafer on the motor clamp, connect the positive pole of the pulse power supply, as the anode of the experiment, connect the carbon plate to the negative pole of the pulse power supply, as the cathode of the experiment, set the pulse power supply constant current mode, the current density is 120mAcm -2 .

[0039] Add 15mL saturated NH to the...

Embodiment 2

[0042] The difference from Example 1 is that the etching solution in Example 2 is configured by mixing hydrofluoric acid, ethanol and hydrogen peroxide solution in a volume ratio of 6:6:1. described. The SEM image of the SiC nanostructure prepared in this example is as follows Figure 4 It shows that the obtained SiC nanostructure is a SiC nanopore structure with completely open pores, and there is no cap layer structure on the surface. Further, the cap layer caused by the original anodic oxidation is removed in this embodiment, and this embodiment is marked with No new capping layer is created during the etching process.

Embodiment 3

[0044] The difference from Example 1 is that the etching solution in this example is configured by mixing hydrofluoric acid, ethanol and hydrogen peroxide solution in a volume ratio of 2:6:1. Others are the same as Example 1, and will not be repeated here. .

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a method for removing cap layer in a SiC nanostructure prepared by anodization, which belongs to the technical field of a material. The method comprises a step of pre-etchingwith a saturated NH4HF solution before etching by an etching solution taking a SiC wafer as an anode. The method can effectively remove the cap layer produced in the process of preparing the SiC nanostructure prepared by anodization, has simple and controllable process, and has good repeatability, the method is simple, the cap layer automatically falls off, no external force is required, and the removal efficiency is high. The method for removing the cap layer also reduces the morphology of a top surface of the SiC nanostructure obtained by anodization, openness is improved, and the performance of SiC nanostructure is increased. In addition, the method of removing the cap layer requires no additional equipment, and shortens the etching time and reduces the cost.

Description

technical field [0001] The invention relates to a method for removing a cap layer that occurs in the process of preparing nanomaterials by anodization, and belongs to the technical field of materials. Background technique [0002] Silicon carbide (SiC) is a third-generation semiconductor with wide band gap, high thermal conductivity and high electron mobility, with excellent mechanical properties, breakdown field strength and radiation resistance, as well as unique high thermal conductivity and electron affinity. This makes them widely used in electronics and short-wave optics, especially in harsh environments such as high temperature / high pressure / chemistry. At present, the preparation method of SiC porous structure with high specific surface has attracted people's attention, and the prepared SiC porous structure has been widely used in sensors, optoelectronics and other fields. [0003] At present, the preparation of SiC porous structures by anodizing etching is considere...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C25F3/12C25D11/02B82Y40/00
CPCB82Y40/00C25D11/02C25F3/12
Inventor 陈善亮李维俊刘乔杨为佑
Owner NINGBO UNIVERSITY OF TECHNOLOGY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com