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Core-shell structure quantum dot with transition layer, fabrication method and application of core-shell structure quantum dot, photoanode, solar photo-electro-chemical device and application of solar photo-electro-chemical device

A core-shell structure, quantum dot technology, applied in capacitors, photovoltaic power generation, electrical components and other directions, can solve the problems of reduced phosgene conversion efficiency, easy oxidation of quantum dots, and reduced photoelectron density, etc., to improve the conversion efficiency of optical devices, The effect of improving the conversion efficiency and service life, and broadening the range of the absorption spectrum

Inactive Publication Date: 2018-11-13
QINGDAO UNIV
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Problems solved by technology

The photoelectric conversion efficiency of solar fluorescent concentrators mainly depends on: (1) the effective absorption of sunlight by quantum dots; since the absorption spectrum of quantum dots cannot effectively overlap with the solar spectrum, quantum dots can only absorb part of sunlight, thereby wasting light from other parts of the solar spectrum
(2) The electron-hole pairs in the photoexcited state are easy to recombine, which reduces the density of photoelectrons generated per unit time, resulting in a decrease in the conversion efficiency of phosgene
(3) Quantum dots are easily oxidized or corroded under battery working conditions, resulting in a shorter battery life
However, uniform deposition of these materials on the photoanode is time-consuming and expensive
[0005] At present, the use of quantum dots to prepare hydrogen still needs to solve the following problems: 1) low efficiency, far below commercial requirements; 2) poor stability

Method used

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  • Core-shell structure quantum dot with transition layer, fabrication method and application of core-shell structure quantum dot, photoanode, solar photo-electro-chemical device and application of solar photo-electro-chemical device
  • Core-shell structure quantum dot with transition layer, fabrication method and application of core-shell structure quantum dot, photoanode, solar photo-electro-chemical device and application of solar photo-electro-chemical device
  • Core-shell structure quantum dot with transition layer, fabrication method and application of core-shell structure quantum dot, photoanode, solar photo-electro-chemical device and application of solar photo-electro-chemical device

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preparation example Construction

[0070] In a second aspect, in at least one embodiment, a method for preparing a core-shell structure quantum dot with a transition layer is provided, including: first preparing a quantum dot core layer; and then preparing a core-shell structure by an optional ion exchange method Quantum dots; using the method of monolayer atomic layer growth, at a temperature higher than the quantum dots of the core-shell structure, respectively injecting precursors containing Cd ions and S / Se ions to prepare a transition layer; finally using The Cd and S precursors realize the growth of the outermost layer, and the core-shell structure quantum dots of the core layer / transition layer / shell structure are prepared.

[0071] It should be noted that the "preparation of quantum dots with a core-shell structure by an optional ion exchange method" means that after the core layer is prepared, quantum dots with a core-shell structure can be prepared by ion exchange, and then The transition layer is pre...

Embodiment 1

[0123] A core-shell quantum dot with a transition layer, the structure of which is CdSe / 5CdSe x S 1－x / CdS;

[0124] The preparation method comprises the following steps:

[0125] The quantum dot core CdSe was prepared first, and then the quantum dot core CdSe ethane solution (concentration of 2 × 10 －7 mol), oleylamine (5mL) and octadecene (ODE, 5mL) were added into the reaction vessel, after exhaust treatment, it was kept at 100°C for 1h; 0.2M), reacted for 1.5h, then added S powder-Se powder / ODE (0.25mL, 0.2M) dropwise, and reacted at 200°C for 10min to prepare a transition layer with a thickness of 1.5nm; then add oil After reacting with cadmium acid for 1.5h, add S powder / ODE, react at 200°C for 15min, cool, and purify.

[0126] The absorption wavelength of the quantum dot is 300-700nm, the emission wavelength is 550-750nm, the half-peak width is 15nm, and the quantum yield is 50-90%.

Embodiment 2

[0128] A core-shell quantum dot with a transition layer, the quantum dot has a structure of CdSeTe / CdSe / CdS;

[0129] The difference between the preparation method and Example 1 is:

[0130] First, the quantum dot core CdSeTe was prepared by co-precipitation method;

[0131] Mix cadmium oleate, selenium powder, and tellurium powder at a molar ratio of 1:0.9:0.1, then heat to 200°C and react for 30 minutes.

[0132] The absorption wavelength of the quantum dot is 300-800nm, the emission wavelength is 600-900nm, the half-peak width is 30nm, and the quantum yield is 20-80%.

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Abstract

The invention belongs to the technical field of a semiconductor nanometer material and application thereof, and relates to a core-shell structure quantum dot with a transition layer, a fabrication method and application of the core-shell structure quantum dot, a photoanode, a solar photo-electro-chemical device and application of the solar photo-electro-chemical device. The structure of the core-shell structure quantum dot with the transition layer comprises a core layer, the transition layer and a shell layer, wherein the transition layer is yCdSe<x>S<1-x>, the shell layer is CdS, x is more than 0 but less than 1, and y is more than 1. By changing the material structure of the quantum dot and adjusting the energy band structure of the quantum dot, the response of the quantum dot on sunlight is promoted, moreover, the separation of electron hole pairs is facilitated, and the photoelectronic generation efficiency is improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor nanomaterials and their applications, and relates to the synthesis of quantum dots and the application of quantum dots in photoanodes, in particular to a core-shell structure quantum dot with a transition layer, a preparation method and application thereof, and a photoanode, Solar photoelectrochemical devices and applications. Background technique [0002] With the rapid development of the global economy and the rapid growth of population, the demand for fossil energy in various countries has further increased; the resulting energy crisis and environmental pollution have become serious problems facing our country and other countries. Therefore, the development of renewable clean energy is a technical field with decisive influence in the world energy economy. The calorific value of hydrogen is high and the combustion product is water, which will not pollute the environment. At present, the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G9/20H01G9/042C25B1/04C25B11/06
CPCC25B1/04C25B11/04C25B1/55H01G9/2045H01G9/2054Y02E10/542Y02E60/36Y02P20/133
Inventor 赵海光
Owner QINGDAO UNIV
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