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A kind of method of diamond film surface graphitization

A technology of diamond film and graphitization, which is applied in the direction of gaseous chemical plating, metal material coating process, structural parts, etc., can solve the problems of poor electrical conductivity, decreased thermal conductivity performance, and decreased diamond quality, achieving high energy density and good The effect of thermal conductivity

Inactive Publication Date: 2019-06-28
DALIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, its electrical conductivity is poor, and the surface shows catalytic inertness, so it needs to be doped, and after doping, the quality of diamond decreases, and the thermal conductivity performance decreases

Method used

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  • A kind of method of diamond film surface graphitization

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] (1) Cleaning: Sonicate the Ti sheet in acetone, ethanol and deionized aqueous solution for 15 minutes and dry it;

[0020] (2) Pretreatment: Place the cleaned Ti sheet in a 2mol / L dilute HCl solution for 10 minutes to remove the surface oxide layer, wash it repeatedly with deionized water until neutral, and dry it with nitrogen;

[0021] (3) The above-mentioned Ti sheet was ultrasonically treated in diamond powder suspension for 30 min, followed by ultrasonic cleaning in ethanol for 5 min, and dried with nitrogen gas for use.

[0022] (4) The substrate to be used is placed on the sample stage in the hot wire chemical vapor deposition equipment, and the background vacuum is pumped to 1×10 - 3 Above Pa. Introduce hydrogen, and adjust the pumping speed of the vacuum pump to maintain the pressure in the reaction chamber at 50 Torr. The filament material is tantalum wire, heated to 2100±100°C, the substrate temperature is 800±150°C, and the substrate surface is etched with...

Embodiment 2

[0025] (1) Cleaning: Sonicate the Si sheet in acetone, ethanol and deionized water solution for 15 minutes and dry it;

[0026] (2) Pretreatment: place the cleaned Si sheet in a 2mol / L dilute HCl solution for 10 minutes to remove the surface oxide layer, wash it repeatedly with deionized water until neutral, and dry it with nitrogen;

[0027] (3) The above-mentioned Si sheet was placed in a diamond powder suspension for ultrasonic treatment for 30 min, followed by ultrasonic cleaning in ethanol for 5 min, and dried with nitrogen gas for use.

[0028] (4) The substrate to be used is placed on the sample stage in the hot wire chemical vapor deposition equipment, and the background vacuum is pumped to 1×10 - 3 Above Pa. Introduce hydrogen, and adjust the pumping speed of the vacuum pump to maintain the pressure in the reaction chamber at 40Torr, the filament material is tantalum wire, heated to 2100±100°C, the substrate temperature is 800±150°C, and the substrate surface is etc...

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Abstract

The invention belongs to the technical field of catalytic material preparation and provides a diamond film surface graphitizing method. A high current pulsed electron beam is used for bombarding the diamond surface, the micro-area bombarded by the high current pulsed electron beam can meet the thermodynamic and kinetic conditions for a diamond to be changed into graphite under the high-temperatureand low-pressure environment, and graphitizing only occurs on the diamond surface. The diamond film surface graphitizing method specifically comprises the steps that after a washed substrate with a surface oxidation layer being removed is arranged in diamond powder suspension liquid to be subjected to ultrasonic treatment, the substrate is put on a sample platform in hot filament chemical vapor deposition equipment to be subjected to fine purification and activating treatment; and a base material with a deposited diamond film is fixed to a clamping device in a high current pulsed electron beam device to be treated, and then a surface graphitized diamond film is obtained. According to the diamond film surface graphitizing method, the high current pulsed electron beam energy density is high, the high-temperature and low-pressure conditions of the micro-area are more beneficial to graphitizing conversion of the diamond, and a cathode catalyst with a good heat conductivity, conductivity and oxygen reduction catalytic activity is formed.

Description

technical field [0001] The invention belongs to the technical field of catalytic material preparation, and relates to the interaction between high-energy electron beams and material surfaces and the phase transition of material surfaces, in particular to a method for graphitizing the surface of a diamond film. Background technique [0002] Fuel cells have been extensively studied as an efficient and environmentally friendly power generation device. The electrocatalytic oxygen reduction reaction determines the working efficiency of the fuel cell, and the working efficiency mainly depends on the catalytic strength of the cathode material. At present, the commonly used cathode oxygen reduction material is Pt-based catalyst. However, metal Pt has a small storage capacity and is expensive. In the operation of fuel cells, its stability is poor due to poisoning, dissolution and agglomeration. Therefore, it is necessary to develop metal-free cathode catalyst materials with low cost...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/27C23C16/02C23C16/56C23C16/01H01M4/88H01M4/90
CPCC23C16/01C23C16/02C23C16/271C23C16/56H01M4/8867H01M4/8882H01M4/90Y02E60/50
Inventor 张贵锋索妮郝胜智黄昊
Owner DALIAN UNIV OF TECH
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