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Praseodymium-doped indium lead magnesium niobate-lead titanate luminescent piezoelectric ceramic as well as preparation method and application thereof

A technology of lead indium magnesium niobate and piezoelectric ceramics, applied in piezoelectric/electrostrictive/magnetostrictive devices, material selection for piezoelectric devices or electrostrictive devices, circuits, etc., can solve the electrical properties Low problems, to achieve the effect of electro-optical regulation, high temperature sensing, and high sensitivity

Active Publication Date: 2018-09-28
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The present invention aims to solve the problem of low electromechanical performance of existing rare earth element doped piezoelectric ceramics, and provides a praseodymium-doped niobium indium lead magnesium oxide-lead titanate luminous piezoelectric ceramic, a preparation method and its application

Method used

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  • Praseodymium-doped indium lead magnesium niobate-lead titanate luminescent piezoelectric ceramic as well as preparation method and application thereof
  • Praseodymium-doped indium lead magnesium niobate-lead titanate luminescent piezoelectric ceramic as well as preparation method and application thereof
  • Praseodymium-doped indium lead magnesium niobate-lead titanate luminescent piezoelectric ceramic as well as preparation method and application thereof

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specific Embodiment approach 1

[0022] Embodiment 1: The general chemical formula of a praseodymium-doped lead indium magnesium niobium oxide-lead titanate luminescent piezoelectric ceramic in this embodiment is 0.24Pb (In 1 / 2 Nb 1 / 2 )O 3 -0.42Pb(Mg 1 / 3 Nb 2 / 3 )O 3 -0.34PbTiO 3 :xPr 3+ , where x is the mole fraction, 0<x≤0.02.

specific Embodiment approach 2

[0023] Specific embodiment 2: The preparation method of a praseodymium-doped lead indium magnesium niobium oxide-lead titanate luminescent piezoelectric ceramic in this embodiment is completed according to the following steps:

[0024] 1. Synthesis of pure-phase InNbO by solid-phase reaction method 4 precursor powder;

[0025] 2. Synthesis of pure-phase MgNb by solid-phase reaction method 2 O 6 precursor powder;

[0026] Third, with PbO, TiO 2 , Pr 6 O 11 , pure phase InNbO 4 Precursor powder and pure phase MgNb 2 O 6 The precursor powder is used as the raw material, and the calcined powder with the calcinite structure is synthesized by the solid-phase reaction method;

[0027] 4. Put the calcined powder with calcite structure into a mortar for grinding, then transfer it to a ball mill, and use anhydrous ethanol as the ball milling medium for ball milling for 8 to 12 hours at a rotational speed of 120 to 200 r / min. The ball-milled wet material is obtained, and the ba...

specific Embodiment approach 3

[0031] Specific embodiment three: the difference between this embodiment and specific embodiment two is that in step one, a pure phase InNbO is synthesized by a solid phase reaction method 4 Precursor powder is specifically carried out according to the following steps:

[0032] Will In 2 o 3 and Nb 2 o 5 Weigh according to the molar ratio of 1:1, the weighed In 2 o 3 and Nb 2 o 5 Mix and place in a ball milling tank, use absolute ethanol as the ball milling medium at a speed of 200~260r / min for 40~50 hours to get the wet material after ball milling, and place the wet material after ball milling at a temperature of 80~ Dry in an electric blast drying oven at 120°C to obtain a dry block, press the dry block into a disc with a diameter of 30mm under a pressure of 20-30MPa, place the disc with a diameter of 30mm in a crucible, and use 2 Raise the temperature of the crucible from room temperature to 1000-1200°C at a heating rate of ~4°C / min, and sinter at a temperature of 100...

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Abstract

The invention discloses praseodymium-doped indium lead magnesium niobate-lead titanate luminescent piezoelectric ceramic as well as a preparation method and application thereof, belongs to the field of functional ceramic materials and particularly relates to the praseodymium-doped indium lead magnesium niobate-lead titanate luminescent piezoelectric ceramic as well as the preparation method and the application thereof. The invention aims at solving the problem of extremely-low electromechanical properties of existing rare earth element doped piezoelectric ceramic. A chemical formula of the piezoelectric ceramic is 0.24Pb(In1 / 2Nb1 / 2)O3-0.42Pb(Mg1 / 3Nb2 / 3)O3-0.34PbTiO3:xPr<3+>, wherein x is mole fraction and is greater than 0 and is smaller than or equal to 0.02. The preparation method comprises the following steps: firstly, synthesizing an InNbO4 and MgNb2O6 precursor; secondly, preparing by taking InNbO4, MgNb2O6, PbO, TiO2 and Pr6O11 as raw materials; thirdly, carrying out gold platingon an electrode and polarization treatment to obtain the piezoelectric ceramic. The praseodymium-doped indium lead magnesium niobate-lead titanate luminescent piezoelectric ceramic disclosed by the invention is used for high-sensitivity temperature sensing and electro-optical control.

Description

technical field [0001] The invention belongs to the field of functional ceramic materials, and particularly relates to a praseodymium-doped lead indium magnesium niobium oxide-lead titanate luminescent piezoelectric ceramic, a preparation method and an application thereof. Background technique [0002] Rare earth elements are a group of elements in the periodic table of chemical elements with rich physical and chemical properties. Rare earth light-emitting materials are generally composed of rare earth elements and material host compounds. The rare earth elements used to emit light are usually called luminescent centers or activators, and the material host compounds are called host compounds. Rare-earth element-doped multifunctional materials have remarkable tunable luminescence properties, while rare-earth element praseodymium-doped oxides have been proven to have high luminous efficiency, showing great application potential in light-emitting devices and optical sensing dev...

Claims

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Application Information

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IPC IPC(8): C04B35/499C04B35/622C04B41/88H01L41/18H01L41/187
CPCC04B35/499C04B35/622C04B41/009C04B41/5116C04B41/88C04B2235/95C04B2235/94C04B2235/3232C04B2235/3296C04B2235/3255C04B2235/6562C04B2235/656C04B2235/6567C04B2235/5436C04B2235/5427C04B2235/602C04B2235/3224H10N30/8536H10N30/8548H10N30/852H10N30/8542C04B41/4529
Inventor 孙恩伟赵燕戚旭东祁旭昕孙晔吕伟明杨彬曹文武
Owner HARBIN INST OF TECH
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