Magnesium-aluminum-silicon low-thermal-expansion-coefficient microcrystalline glass material and preparation method thereof

A low thermal expansion coefficient and glass-ceramic technology, applied in the field of electronic ceramic materials, can solve the problems of large thermal expansion coefficient, low thermal expansion coefficient, and high dielectric loss, and achieve low dielectric constant, high bending strength, and low dielectric loss.

Inactive Publication Date: 2018-09-28
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The object of the present invention is to provide a magnesium-aluminum-silicon-based microcrystal with low thermal expansion coefficient for the problems of high sintering temperature, large thermal expansion coefficient, low bending strength, high dielectric constant, and high dielectric loss in existing ceramic materials in the background technology. The glass material and its preparation method, the electronic package substrate made of the material not only has a low coefficient of thermal expansion, but also has high bending strength, good dielectric properties, simple production process, high stability and low cost

Method used

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  • Magnesium-aluminum-silicon low-thermal-expansion-coefficient microcrystalline glass material and preparation method thereof
  • Magnesium-aluminum-silicon low-thermal-expansion-coefficient microcrystalline glass material and preparation method thereof

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Embodiment 1

[0031] Accurately calculate MgO and Al according to the formula ratio in the above table 2 o 3 , SiO 2 , ZnO, B 2 o 3 , ZrO 2 The actual amount of various raw materials, after accurate weighing, ball milled for 3 hours to make it evenly mixed and dried; melted the mixture in a crucible, raised the temperature to 1475 ° C for 1 hour, cooled down after the ingredients were melted and clarified, and melted Pour the body into deionized water and water quench to obtain transparent glass slag; the obtained glass slag is wet ball milled and dried to obtain glass powder. According to the basic glass powder and Cr 2 o 3 Accurately weigh Cr with a mass ratio of 100:1 2 o 3 Desired mass, the Cr 2 o 3 Mix and blend into the above glass powder, mill with deionized water and zirconium balls as the medium for 5 hours, dry and sieve to obtain a uniformly dispersed powder; after the powder is granulated and pressed, it is sintered at 950°C And keeping it warm for 1 hour, the magnesiu...

Embodiment 2

[0034] Accurately calculate MgO and Al according to the formula ratio in the above table 2 o 3 , SiO 2 , ZnO, B 2 o 3, ZrO 2 The actual amount of various raw materials, after being accurately weighed, ball milled for 3 hours to make it evenly mixed and dried; melted the mixture in a crucible, raised the temperature to 1475°C and kept it for 1.5 hours, cooled down after the ingredients were melted and clarified, and melted Pour the body into deionized water and water quench to obtain transparent glass slag; the obtained glass slag is wet ball milled and dried to obtain glass powder. According to the basic glass powder and Cr 2 o 3 Accurately weigh Cr with a mass ratio of 100:2 2 o 3 Desired mass, the Cr 2 o 3 Mix and blend into the above glass powder, mill with deionized water and zirconium balls for 6 hours, dry and sieve to obtain a uniformly dispersed powder; the powder is sintered at 925°C after granulation and compression molding And keeping it warm for 1 hour, t...

Embodiment 3

[0037] Accurately calculate MgO and Al according to the formula ratio in the above table 2 o 3 , SiO 2 , ZnO, B 2 o 3 , ZrO 2 The actual amount of various raw materials, after being accurately weighed, ball milled for 3 hours to make it evenly mixed and dried; melted the mixture in a crucible, raised the temperature to 1450°C and kept it for 1.5 hours, cooled down after the ingredients were melted and clarified, and melted Pour the body into deionized water and water quench to obtain transparent glass slag; the obtained glass slag is wet ball milled and dried to obtain glass powder. According to the basic glass powder and Cr 2 o 3 Accurately weigh Cr with a mass ratio of 100:3 2 o 3 Desired mass, the Cr 2 o 3 Mix and blend into the above glass powder, mill with deionized water and zirconium balls for 6 hours, dry and sieve to obtain a uniformly dispersed powder; the powder is sintered at 925°C after granulation and compression molding And keeping it warm for 1.5 hour...

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Abstract

The invention belongs to the field of electronic ceramic materials, and particularly provides a magnesium-aluminum-silicon low-thermal-expansion-coefficient microcrystalline glass material and a preparation method thereof which are used for overcoming the problems of high sintering temperature, large thermal expansion coefficient, low bending strength, high dielectric constant, high dielectric loss and the like of an existing ceramic material. The magnesium-aluminum-silicon low-thermal-expansion-coefficient microcrystalline glass material and the preparation method thereof have the advantagesthat the prepared low-thermal-expansion-coefficient microcrystalline glass has low thermal expansion coefficient (1.0-2.0*10<-6> per DEG C), high bending strength (150-200 MPa), low dielectric constant (5.0-5.5 @1 MHz), low dielectric loss (1.5-3.5*10<-3> @1 MHz) and reliable insulation, thereby satisfying the requirements of an LTCC electronic package substrate material; the magnesium-aluminum-silicon low-thermal-expansion-coefficient microcrystalline glass material can achieve low-temperature sintering at 900-950 DEG C, the process is simple, the stability is high, the production cost is low, and the magnesium-aluminum-silicon low-thermal-expansion-coefficient microcrystalline glass material is suitable for industrial mass production.

Description

technical field [0001] The invention belongs to the field of electronic ceramic materials, and relates to a magnesium-aluminum-silicon-based low thermal expansion coefficient glass-ceramic material and a preparation method thereof; the material is suitable for electronic packaging, especially for ultra-large-scale integrated circuits. Background technique [0002] The rapid development of information technology promotes the continuous development of integrated circuit systems towards high density, ultra-large scale and multi-functionalization. The rapid improvement of semiconductor chip performance also makes electronic packaging technology develop towards more advanced high-density and three-dimensional packaging. , which puts forward higher requirements for electronic packaging substrate materials. In addition to high enough bending strength and excellent dielectric properties, higher-density integrated circuits have more precise requirements for the thermal expansion coeff...

Claims

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Application Information

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IPC IPC(8): C03C10/08
CPCC03C10/0045
Inventor 李波荆柯
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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