Manufacturing method for contact plug layout

Abstract

The invention discloses a manufacturing method for a contact plug layout. The manufacturing method comprises the following steps of (a) receiving a plurality of active area patterns and a plurality ofburied gate patterns parallel to one another, wherein each active area pattern overlaps the two buried gate patterns separately to form two overlapping areas in the active area pattern and a contactplug area between the two overlapping areas; (b) forming contact plug patterns on the contact plug areas respectively, wherein the contact plug patterns comprise a parallelogram shape, the inner angleof the parallelogram shape is not equal to 90 degrees, the contact plug patterns overlap parts of buried gate patterns in all active areas respectively, and the step (a) and step (b) are conducted inone computer device.

Description

technical field [0001] The invention relates to a manufacturing method of a contact plug layout, in particular to a manufacturing method of a bit line contact plug layout of a semiconductor memory element. Background technique [0002] Dynamic random access memory (DRAM for short hereinafter) is a main volatile memory, and is an indispensable key component in many electronic products. DRAM is composed of a large number of memory cells to form an array area for storing data, and each memory cell is composed of a metal oxide semiconductor (MOS) transistor and a capacitor. Composed in series. [0003] The capacitor is electrically connected to the conductive structure formed in the electrode contact hole (node ​​contact) through the storage electrode (storage node), and forms a one-bit access path with the drain of the MOS transistor to achieve the purpose of storing or outputting data . With the improvement of the DRAM integration level, it is necessary to reduce the area o...

AI Technical Summary

Problems solved by technology

However, as the integration of DRAM memory cells increases, the storage electrode contact plug SC and the bit line contact plug BC in the COB may be electrically connected through the active area AA, resulting in a short circuit, such as figure 1 circled in

The storage electrode contact plug-bit line contact plug short circuit (SC-BC short) will cause serious manufacturing process yield and product problems

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