Preparation method of flat barrier-type TFT anodic aluminum oxide insulation layer

An anodized aluminum and insulating layer technology, applied in anodizing, coating, metal material coating processes, etc., can solve the problems of affecting performance, short oxidation time, aluminum film peeling, etc., to avoid instantaneous peeling and improve purity The effect of smoothness and increased success rate

Inactive Publication Date: 2018-09-07
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

The disadvantages of this method are: (1) the pretreatment process of the aluminum sheet is difficult to finely control, and it is not suitable for the semiconductor process of preparing barrier aluminum oxide films, such as the preparation process of TFT; (2) the time for aluminum to oxidize in air is extremely For a short time, after the natural oxide film of aluminum is dissolved in the alkaline solution during the above experiment, it is easy to oxidize again in the air and re-form the oxide film
[0006] In addition, in the traditional preparation process of barrier-type anodic aluminum oxide film, the aluminum film that has been plated is placed in the electrolyte and the voltage is applied. If the voltage is unstable, the aluminum film is prone to fall off, which seriously affects the aluminum oxide film. The anodic oxidation process, which in turn affects the performance of the final prepared TFT

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  • Preparation method of flat barrier-type TFT anodic aluminum oxide insulation layer

Examples

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Embodiment 1

[0031] This embodiment provides a method for preparing a barrier-type anodic oxide aluminum TFT insulating layer, comprising the following steps:

[0032] Step (1) pretreat the glass substrate, including cutting, cleaning, and drying:

[0033] First, select a glass substrate of 25.4mm×75.2mm and a thickness of 12mm, cut it into a rectangular substrate of 25.4×60mm (adapted to the ratio of the oxidation tank), use deionized water for the first step of cleaning, and then use detergent Do the second cleaning with deionized water, then put the substrate into acetone for cleaning, and finally put the substrate into alcohol and clean it with ultrasonic for 5min~10min. Put the sonicated substrate into a dry petri dish, then put it into a drying oven with a constant temperature of 120°C, and dry it with hot air. Take out the glass substrate after about 15 minutes;

[0034] Step (2) adopts DC magnetron sputtering method to prepare high-purity aluminum film:

[0035] Put the dried gla...

Embodiment 2

[0043] This embodiment provides a preparation method for a barrier-type anodic oxide aluminum TFT insulating layer, the basic process flow of which is the same as that of Embodiment 1, the difference is that:

[0044] Put the aluminum target in the target 1 position in the vacuum chamber, and put the magnesium sulfide target in the target 2 position;

[0045] After the aluminum film is plated by DC magnetron sputtering, do not open the hatch, wait for 5-10 minutes for the substrate to cool down, and then turn on the revolution switch to make the substrate rotate to the top of the target 2; vacuumize to make the vacuum degree reach 1.1× 10 -4 Pa, open the valve to feed argon gas, the ventilation rate is 30sccm, after stabilization, adjust the sputtering mode to radio frequency sputtering, set the sputtering power to 120w, perform pre-sputtering for 5min, then open the target 2 baffle, and carry out For radio frequency sputtering of magnesium sulfide, the effective sputtering t...

Embodiment 3

[0047] This embodiment provides a preparation method for a barrier-type anodic oxide aluminum TFT insulating layer, the basic process flow of which is the same as that of Embodiment 1, the difference is that:

[0048] Put the aluminum target in the target 1 position in the vacuum chamber, and put the magnesium oxide target in the target 2 position;

[0049] After the aluminum film is plated by DC magnetron sputtering, do not open the hatch, wait for 5-10 minutes for the substrate to cool down, and then turn on the revolution switch to make the substrate rotate to the top of the target 2; vacuumize to make the vacuum degree reach 1.1× 10 -4 Pa, open the valve to feed argon gas, the ventilation rate is 25 sccm, after stabilization, adjust the sputtering mode to radio frequency sputtering, set the sputtering power to 120w, perform pre-sputtering for 5min, then open the target 2 baffle, and carry out For radio frequency sputtering of magnesium oxide, the effective sputtering time...

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Abstract

The invention belongs to the field of nano structure materials, particularly provides a preparation method of a flat barrier-type TFT anodic aluminum oxide insulation layer. After an aluminum membraneis plated in a magnetron sputtering manner, the secondary sputtering is performed directly under a vacuum condition, a thin layer of magnesium nitride, magnesium sulfide, magnesium oxide, calcium oxide, calcium peroxide, calcium nitride or calcium sulfide film is continuously plated on the surface of pure aluminum, so that the contact between the pure aluminum surface which is just plated and aircan be effectively prevented from rapidly forming an amorphous natural aluminum oxide film; and moreover, the secondarily-sputtered magnesium nitride, magnesium sulfide, magnesium oxide, calcium oxide, calcium peroxide, calcium nitride or calcium sulfide film contacts weak-acidic electrolyte, the film is hydrolyzed to generate trace alkaline substance dissolved in the weak-acidic electrolyte, sothat the subsequent anode oxidation process of the aluminum is not influenced; and not only can the highly-flat barrier-type anode aluminum oxide film be obtained, but also the instantaneous strippingrisk in the anode oxidation process can be avoided, the process is simple, and the cost is low.

Description

technical field [0001] The invention belongs to the field of nanostructure materials, and in particular relates to a preparation method of a barrier type TFT anodized aluminum oxide insulating layer. Background technique [0002] Aluminum is a relatively active metal. It only takes a few seconds in the air to form an oxide film naturally. This oxide film is amorphous, thin and porous, and has low mechanical strength. It cannot meet the requirements of high-precision semiconductor materials and thin-film transistors. (TFT) insulation application requirements. In order to obtain excellent flatness, corrosion resistance and some mechanically required properties, aluminum oxide films can be artificially produced, and the most widely used method for artificially producing oxide films is electrochemical oxidation-anodic oxidation. [0003] Generally speaking, a thin film transistor (TFT) is composed of a source-drain electrode, an active layer, a gate insulating layer, and a gate...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23F17/00C23C14/18C23C14/35C23C14/58C25D11/06H01L21/28
CPCC23C14/185C23C14/352C23C14/584C23F17/00C25D11/06H01L21/28008
Inventor 陈文彬陈赞
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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