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Low-power resistive switching memory cell based on doped strontium titanate film and its preparation method and application

A technology of resistive switch and storage unit, applied in the field of information storage, can solve the problems of no major breakthrough in reducing power consumption, large set/reset voltage, small on/off current ratio, etc., so as to reduce power consumption and reduce set /Reset voltage, effect of increasing ON/OFF current ratio

Inactive Publication Date: 2020-01-31
SOUTHWEST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although it has been reported in the literature that strontium titanate films doped with Fe, Cr, Nb and other metals have a resistance switching effect, but from the current research results, the strontium titanate films doped with metals are amorphous or polycrystalline films. In the application of switching memory, there are still problems such as high set / reset voltage and small on / off current ratio, and there is still no major breakthrough in reducing power consumption

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  • Low-power resistive switching memory cell based on doped strontium titanate film and its preparation method and application
  • Low-power resistive switching memory cell based on doped strontium titanate film and its preparation method and application
  • Low-power resistive switching memory cell based on doped strontium titanate film and its preparation method and application

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Embodiment 1

[0036] Embodiment 1, a method for preparing a low power consumption resistive switch memory cell based on a doped strontium titanate thin film, which includes the following steps:

[0037] Step 1: Select a conventional semiconductor Si single crystal substrate as the substrate, and prepare the lower electrode layer by DC magnetron sputtering in an argon atmosphere. The process conditions are: metal Pt is used as the sputtering target, and the sputtering gas is Argon gas, the sputtering pressure is 2.7Pa, the sputtering temperature is 350°C, the sputtering power is 35W, a bias voltage of -100V is applied, and the growth rate is 10-15nm / min;

[0038] In step 2, the substrate with the lower electrode layer is preheated at a temperature of 600° C., and then the Fe / strontium titanate thin film resistive layer is prepared on the lower electrode layer by radio frequency magnetron sputtering. The process conditions are: : Strontium titanate ceramic target with a purity of 99.9% and a ...

Embodiment 2

[0041] Embodiment 2, a method for preparing a low power consumption resistive switch memory cell based on a doped strontium titanate thin film, which includes the following steps:

[0042] Step 1: Select a conventional semiconductor Si single crystal substrate as the substrate, and prepare the lower electrode layer by DC magnetron sputtering in an argon atmosphere. The process conditions are: metal Pt is used as the sputtering target, and the sputtering gas is Argon gas, the sputtering pressure is 2Pa, the sputtering temperature is 300°C, the sputtering power is 25W, a bias voltage of -100V is applied, and the growth rate is 10-15nm / min;

[0043] In step 2, the substrate with the lower electrode layer is preheated at a temperature of 800° C., and then the Fe / strontium titanate thin film resistive layer is prepared on the lower electrode layer by radio frequency magnetron sputtering. The process conditions are: : Strontium titanate ceramic target with a purity of 99.9% and a Fe...

Embodiment 3

[0046] Embodiment 3, a method for preparing a low power consumption resistive switch memory cell based on a doped strontium titanate thin film, which includes the following steps:

[0047] Step 1: Select a conventional semiconductor Si single crystal substrate as the substrate, and prepare the lower electrode layer by DC magnetron sputtering in an argon atmosphere. The process conditions are: metal Pt is used as the sputtering target, and the sputtering gas is Argon gas, the sputtering pressure is 1Pa, the sputtering temperature is 400°C, the sputtering power is 45W, a bias voltage of -100V is applied, and the growth rate is 10-15nm / min;

[0048] In step 2, the substrate with the lower electrode layer is preheated at a temperature of 300° C., and then the Fe / strontium titanate thin film resistive layer is prepared on the lower electrode layer by radio frequency magnetron sputtering. The process conditions are: : Strontium titanate ceramic target with a purity of 99.9% and a Fe...

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Abstract

The invention discloses a low-power consumption resistance switch memory unit based on a doped strontium titanate thin film and its preparation method and application, including a substrate layer, a lower electrode layer, a resistive switch layer and an upper electrode layer arranged sequentially from bottom to top , the resistive variable layer is a Fe / strontium titanate thin film resistive layer in which Fe is doped in the strontium titanate thin film, and the doping amount of Fe is 1-10 at%. It features low set / reset voltage, high on / off current ratio, and good resistive switching stability.

Description

technical field [0001] The invention relates to the technical field of information storage, in particular to a low-power consumption resistance switch memory unit based on a doped strontium titanate thin film and its preparation method and application. Background technique: [0002] Resistive switch memory has become one of the most promising new-generation memories because of its advantages of fast read and write speed, low power consumption, high integration and good compatibility with today's semiconductor technology. The commonly used materials for the resistive switch layer in existing resistive switch memory cells mainly include perovskite-type multi-component inorganic oxides and organic oxides, such as SrZrO 3 , SrTiO 3 、CH 3 NH 3 PB 3 , binary transition metal oxides with simple structures, such as NiO, TiO 2 , V x o y , ZrO 2 , HfO 2 And graphene, etc., these materials have the disadvantages of high set / reset voltage or large ON state operating current, an...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
CPCH10N70/24H10N70/8836H10N70/043H10N70/026
Inventor 邱晓燕江雪魏明龙
Owner SOUTHWEST UNIV
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