Insulated gate bipolar transistor (IGBT) device

Abstract

The invention discloses an insulated gate bipolar transistor (IGBT) device. The IGBT device comprises at least two first groove gates and at least one flotation region, wherein a channel region is formed on at least one side surface of each first groove gate, two sides of the flotation region are limited by side surfaces of the two corresponding first groove gates, at least one second groove gateis formed in the flotation region and penetrates through the floating region, a first well region oppositely doped is formed on a surface of the flotation region, an emission region is formed on a surface of the channel region, a surface of the emission region is connected to an emitter via a contact hole, a surface of the first well region is also connected to the emitter via the contact hole, the second groove gate is connected to a control signal, the channel on the side surface of the second groove gate is switched off by the control signal when the IGBT device is conducted so that carriers are accumulated in the flotation region, and the channel on the side surface of the second groove gate is switched on by the control signal when the IGBT device is switched off so that the accumulated carriers are released. By the IGBT device, the on-state voltage drop of the device can be simultaneously reduced, and the switch-off loss of the device is reduced.

Description

technical field [0001] The present invention relates to a semiconductor integrated circuit, in particular to an insulated gate bipolar transistor (Insulated gate bipolar transistor, IGBT) device. Background technique [0002] The IGBT has both the voltage control of the insulated gate field effect transistor (MOSFET) and the low on-resistance and high withstand voltage characteristics of the bipolar transistor (BJT). , Low switching loss and many other excellent characteristics, are widely used in medium and high power power electronic systems. [0003] Such as figure 1 Shown is a schematic structural diagram of an existing IGBT device. Taking an N-type device as an example, the existing IGBT device includes: [0004] A collector region 103 composed of a P+ region formed on the back of the silicon wafer, an N-type doped buffer layer (Buffer) 102 formed above the collector region 103, a drift region 101 composed of an N-doped region, The doping concentration of the buffer ...

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Problems solved by technology

[0011] 1. Due to the large lateral area of ​​the P-float104a, the Miller capacitance Cgc increases, which affects the turn-on characteristics of the device and the stability of the gate overshoot voltage

[0012] 2. When the device is turned off, the holes accumulated under the P-float 104a region, that is, the holes in the hole accumulation layer 202 cannot be swept out in time, which will increase the turn-off loss of the device

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