Nano microstructure silicon negative electrode material preparation method
A silicon negative electrode, nano-micro technology, applied in electrode manufacturing, nanotechnology for materials and surface science, structural parts, etc., can solve the problem that the pore size distribution of porous silicon negative electrode materials is difficult to control, and high volume specific capacity batteries are difficult to achieve. For the first time, The problem of low coulombic efficiency in charge and discharge can achieve excellent cycle performance, inhibit volume expansion, and improve cycle performance.
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Embodiment 1
[0042] A kind of preparation method of nanostructure silicon negative electrode material of the present invention, comprises the steps:
[0043] (1) Disperse metallurgical-grade micro-silicon in a 5% ethanol dispersion and disperse it ultrasonically for 10 minutes to obtain a silicon pre-dispersion;
[0044] (2) Take HF-AgNO 3 solution system. HF concentration is 5mol / L, AgNO 3 The concentration is 0.01mol / L, and the etchant is slowly added into the silicon pre-dispersion liquid through a peristaltic pump at 10ml / min, and the reaction is carried out for 5 minutes, and then suction filtered to obtain micron silicon with Ag particles deposited on the surface;
[0045] (3) redispersing the micron silicon with Ag particles deposited on the surface obtained in step (2) in a 5% ethanol dispersion, and stirring to obtain a silicon dispersion;
[0046] (4) HF-H 2 o 2 The solution is added into the silicon dispersion obtained in step (3) by a peristaltic pump at a speed of 10ml / mi...
Embodiment 2
[0053] A kind of preparation method of nanostructure silicon negative electrode material of the present invention, comprises the steps:
[0054] (1) Disperse metallurgical-grade micro-silicon in a 5% ethanol dispersion and disperse it ultrasonically for 10 minutes to obtain a silicon pre-dispersion;
[0055] (2) Take HF-AgNO 3 Solution system, HF concentration is 5mol / L, AgNO 3 The concentration is 0.005mol / L, and the etchant is slowly added to the silicon pre-dispersion liquid through a peristaltic pump at 10ml / min, and the reaction is carried out for 5 minutes, and then suction filtered to obtain micron silicon with Ag particles deposited on the surface;
[0056] (3) redispersing the micron silicon with Ag particles deposited on the surface obtained in step (2) in a 5% ethanol dispersion, and stirring to obtain a silicon dispersion;
[0057] (4) HF-H 2 o 2 The solution is added into the silicon dispersion obtained in step (3) by a peristaltic pump at a speed of 10ml / min,...
Embodiment 3
[0062] A kind of preparation method of nanostructure silicon negative electrode material of the present invention, comprises the steps:
[0063] (1) Disperse metallurgical-grade micro-silicon in a 5% ethanol dispersion and disperse it ultrasonically for 10 minutes to obtain a silicon pre-dispersion;
[0064] (2) Take HF-AgNO 3 Solution system, HF concentration is 5mol / L, AgNO 3 The concentration is 0.02mol / L, and the etchant is slowly added into the silicon pre-dispersion liquid through a peristaltic pump at 10ml / min, and the reaction is carried out for 5 minutes, and then suction filtered to obtain micron silicon with Ag particles deposited on the surface;
[0065] (3) Redisperse the micron silicon with Ag particles deposited on the surface in 5% ethanol dispersion, and obtain the dispersion of silicon after stirring;
[0066] (4) HF-H 2 o 2 The solution is added into the silicon dispersion obtained in step (3) by a peristaltic pump at a speed of 10ml / min, the HF concentr...
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