Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Capacitor device structure, capacitor and manufacturing method thereof

A technology of device structure and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, capacitors, electric solid-state devices, etc., can solve the problems of easily damaged electrical properties, poor fatigue resistance of devices, and low capacitance density of capacitors. Good performance, reduced bending resistance, and reduced sheet resistance

Pending Publication Date: 2018-07-27
无锡博硕精睿科技有限公司
View PDF6 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The object of the present invention is to provide a capacitor device structure, a capacitor and a capacitor for the deficiencies in the prior art that the capacitance density of the capacitor is low, the fatigue resistance of the device is not good, and the electrical performance is easily damaged and cannot be recovered after continuous bending for many times. Manufacturing method

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Capacitor device structure, capacitor and manufacturing method thereof
  • Capacitor device structure, capacitor and manufacturing method thereof
  • Capacitor device structure, capacitor and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0061] At 20°C, with O 2Plasma pre-treats plastic surfaces. At 150°C, use ALD method to deposit AZO conductive film as the bottom layer, then use spin coating method to lay nanowires on the bottom layer, and then use ALD method to deposit AZO conductive film on the bottom layer to cover the wire layer to obtain a layer of 100nm A thick AZO / AgNW / AZO composite film was used as the bottom electrode, on which a 10 nm thick layer of ZrO was deposited at 150 °C 2 (k value is about 22) thin film as dielectric layer 4, at 150 ℃, AZO conductive film is deposited on the dielectric layer 4 with the method of ALD as the bottom layer, and then the nano wire is laid on the bottom layer by the method of spin coating, and then ALD The method deposited AZO conductive film on the bottom layer to cover the wire layer, and prepared a layer of 100nm thick AZO / AgNW / AZO composite film as the top electrode. Perform photolithography and wet etching on the top electrode to form devices one by one, an...

Embodiment 2

[0063] For ease of description, the following method is referred to as the method of ALD plus spin coating: use ALD to deposit a conductive film as the bottom layer, then use the spin coating method to lay nanowires on the bottom layer, and then use the ALD method to deposit a conductive film on the bottom layer Cover the wire layer.

[0064] At 80°C, with O 2 The plastic surface is pretreated by plasma. At 100°C, a 60nm-thick AZO / CNT / AZO composite film is prepared by ALD and spin coating as the bottom electrode. At 100°C, a layer 10nm thick ZrO 2 (k value is about 22) film as the dielectric layer 4 . At 100°C, a 60nm-thick AZO / CNT / AZO composite film was prepared on the dielectric layer 4 by ALD and spin coating as the top electrode, and the top electrode was photolithographically and wet-etched to form individual devices. , the size of a single device is preferably 100 μm×100 μm.

Embodiment 3

[0066] At 20°C, a 20nm thick AZO film was deposited on the PEN surface by magnetron sputtering, and a 80nm thick AZO / AgNW / AZO composite film was prepared by ALD and spin coating at 80°C as Bottom electrode, at 80°C, deposit a layer of 20nm thick TiO on the bottom electrode 2 (k value is about 80) thin film is used as the dielectric layer 4, at 80 ℃, on the dielectric layer 4, prepare a layer of 80nm thick AZO / AgNW / AZO composite thin film with the method of ALD and spin coating as the top electrode, the top electrode Perform photolithography and wet etching to form devices one by one, and the size of a single device is preferably 100 μm×100 μm.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a capacitor device structure, a capacitor and a manufacturing method thereof, specific to the shortcomings of low capacitance density of the capacity, poor fatigue resistance ofthe device, easily damaged electrical performance and incapability of recovery after multiple times of continuous bending in the prior art. The capacitor device structure comprises a top electrode structure and a bottom electrode structure; the top electrode structure and the bottom electrode structure both adopt a composite electrode structure; the capacitor comprises the capacitor device structure; the top electrode is subjected to photoetching and wet corrosion to form a separated device array; by adoption of the capacitor device structure, the surface resistance of the bottom electrode and the top electrode is greatly lowered, thereby lowering high-frequency loss of the device, reducing cracks generated in the thin film bending process, and effectively improving the bending characteristic and the anti-fatigue characteristic of the device; and by adopting the transparent capacitor device structure, a totally transparent capacitor can be configured while the surface resistance and the anti-bending characteristic of the electrodes are greatly lowered.

Description

technical field [0001] The invention relates to a capacitor device structure, a capacitor, especially a transparent capacitor and a manufacturing method thereof. Background technique [0002] In recent years, transparent and flexible electronic devices have received increasing attention, such as bendable transparent displays, thin-film solar cells based on plastic substrates, and various wearable devices. In these devices, transparent flexible capacitors play an important role, such as a charge-discharge element in the pixel drive circuit of liquid crystal display (LCD) and organic light-emitting diode display (OLED), and a storage device in the transparent window of solar cells. Functional components, as basic logic components in transparent digital circuits, etc. The traditional flat panel capacitor has a metal-insulator-metal sandwich structure. Due to the presence of metal, the capacitor with this structure is opaque. Applying it to the drive system of the display devic...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/64H01L21/02
CPCH01L23/64H01L28/56H01L21/02
Inventor 张国祯刘昌
Owner 无锡博硕精睿科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com