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Vapor deposition method for silicon-doped graphene

A vapor deposition method and graphene technology, applied in the field of graphene, can solve problems such as unstable existence and changes in graphene properties, and achieve the effects of high efficiency and stability, simple process, and strong controllability of silicon doping rate

Active Publication Date: 2018-07-06
SHAOXING UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantage of this type of doping method is that the properties of graphene after doping will change over time and cannot exist stably
In contrast, the substitutional doping method in which silicon atoms replace carbon atoms in graphene can keep the properties of doped graphene more stable, and silicon-doped graphene has not yet been obtained.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] A gas phase deposition method of silicon-doped graphene, said gas phase deposition method according to the following steps:

[0034] Step 1, add graphene powder into absolute ethanol, seal and ultrasonically react for 30 minutes, and obtain graphene suspension after cooling;

[0035] Step 2, adding polyethylene glycol to the graphene suspension, mechanically stirring until completely dissolved, to obtain a graphene dispersion alcohol solution;

[0036] Step 3, putting the graphene dispersed alcohol solution into a vacuum distillation reactor for 2 hours of vacuum distillation reaction to obtain a viscous liquid, and drying to obtain a fluffy graphene block;

[0037] Step 4, adding the graphene block into the reaction kettle, heating and standing for 20 minutes, then passing silane gas to react for 3-8 hours, and obtaining the graphene adsorption block after natural cooling;

[0038] Step 5, adding the graphene adsorption block into absolute ethanol for 30 minutes of ul...

Embodiment 2

[0049] A gas phase deposition method of silicon-doped graphene, said gas phase deposition method according to the following steps:

[0050] Step 1, adding graphene powder into absolute ethanol, sealing and ultrasonically reacting for 60 minutes, and obtaining graphene suspension after cooling;

[0051] Step 2, adding polyethylene glycol to the graphene suspension, mechanically stirring until completely dissolved, to obtain a graphene dispersion alcohol solution;

[0052] Step 3, putting the graphene dispersed alcohol solution into a vacuum distillation reactor for 5 hours of vacuum distillation reaction to obtain a viscous liquid, and drying to obtain a fluffy graphene block;

[0053] Step 4, adding the graphene block into the reaction kettle, heating and standing for 40 minutes, then passing silane gas to react for 3-8 hours, and obtaining the graphene adsorption block after natural cooling;

[0054] Step 5, adding the graphene adsorption block into absolute ethanol for 60 m...

Embodiment 3

[0065] A gas phase deposition method of silicon-doped graphene, said gas phase deposition method according to the following steps:

[0066] Step 1, adding graphene powder into absolute ethanol, sealing and ultrasonically reacting for 50 minutes, and obtaining graphene suspension after cooling;

[0067] Step 2, adding polyethylene glycol to the graphene suspension, mechanically stirring until completely dissolved, to obtain a graphene dispersion alcohol solution;

[0068] Step 3, putting the graphene dispersed alcohol solution into a vacuum distillation reactor for 4 hours of vacuum distillation reaction to obtain a viscous liquid, and drying to obtain a fluffy graphene block;

[0069] Step 4, adding the graphene block into the reaction kettle, heating and standing for 30 minutes, then passing silane gas to react for 3-8 hours, and obtaining the graphene adsorption block after natural cooling;

[0070] Step 5, adding the graphene adsorption block into absolute ethanol for 45 m...

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Abstract

The invention discloses a vapor deposition method for silicon-doped graphene, which comprises the steps: S1, adding graphene powder into absolute ethyl alcohol, performing a sealed ultrasonic reactionfor 30 to 60min, and after cooling, obtaining graphene suspension; S2, adding polyethylene glycol into the graphene suspension, mechanically stirring to a completely dissolved state to obtain graphene dispersed alcohol solution; S3, placing the graphene dispersed alcohol solution into a reduced pressure distillation reaction kettle to perform a reduced pressure distillation reaction for 2 to 5h to obtain viscous fluid, and drying to obtain fluffy graphene blocks; S4, adding the graphene blocks into a reaction kettle, heating and standing for 20 to 40min, then filling silane gas to perform a reaction for 3 to 8h, and naturally cooling to obtain graphene adsorption blocks; S5, adding the graphene adsorption blocks into the absolute ethyl alcohol to perform an ultrasonic reaction for 30 to 60min, and after filtering, obtaining silicon-doped precipitates; S6, performing a heating and pressurizing reaction on the silicon-doped precipitates in a hydrogen reaction kettle for 3 to 6h, and after cooling, obtaining the silicon-doped graphene. The vapor deposition method is simple in process, high in controllability of a silicon doping rate and applicable to extensive production.

Description

technical field [0001] The invention belongs to the technical field of graphene, in particular to a vapor phase deposition method of silicon-doped graphene. Background technique [0002] The discovery of graphene confirmed the stable existence of two-dimensional materials and opened up a new stage of research on two-dimensional materials. The carrier mobility can reach 200,000cm 2 / V.s, which provides the basis for its ability to manufacture high-frequency electrons, and the absorption of light by single-layer graphene is 2.3%, which makes it an important material for optoelectronic device research. However, while graphene has excellent photoelectric properties, it has a very serious defect, that is, the band gap is zero, which limits its application in micro-nano optoelectronic devices. In current experiments, methods such as preparing graphene nanobelts are usually used to open the energy bands of graphene, but the energy band sizes are all below 300meV. In addition, sc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/194
Inventor 刘伟
Owner SHAOXING UNIVERSITY
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