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A Method for Optimizing Magnetic Tunnel Junction

A magnetic tunnel junction and chemical technology, applied in the field of optimization of magnetic tunnel junction by chemically assisted ion beam etching, can solve the short circuit of the memory layer, the influence of anisotropic etching performance, and the selection of poor etching. ratio and other issues, to achieve the effect of improving electrical performance, being beneficial to magnetics, and improving yield.

Active Publication Date: 2021-04-27
SHANGHAI CIYU INFORMATION TECH CO LTD
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

The two etching processes have their own advantages and disadvantages, for example: IBE has very good anisotropic etching performance, but, due to the ion beam (Ar + etc.) itself does not chemically react with the etched material, it will have a very poor etching selectivity and more physical sputtering deposition; RIE has a very good etching selectivity, however, anisotropic etching performance will suffer
In the current manufacturing process, due to the re-deposition of physical sputtering or chemical etching by-products, usually, after the magnetic tunnel junction is etched, a damaged layer / deposition layer will be formed on the sidewall, which will affect the magnetic tunnel junction. The magnetic and electrical properties, what's more, will directly lead to a short circuit from the reference layer to the memory layer, which is not conducive to the improvement of the yield of the magnetic memory

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  • A Method for Optimizing Magnetic Tunnel Junction
  • A Method for Optimizing Magnetic Tunnel Junction
  • A Method for Optimizing Magnetic Tunnel Junction

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Embodiment Construction

[0032] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings. It should be noted that all the drawings of the present invention are in simplified form and use inaccurate scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0033] The present invention provides a chemically assisted ion beam etching (CAIBE) process for optimizing the sidewall of the magnetic tunnel junction after etching, by using He, Ne, Ar, Kr or Xe as the ion source, and using PF3 , NO and gases with carbonyl or hydroxyl functional groups (such as: HCOOH, CH 3 OH, CH 3 COOH, C 2 h 5 OH, COF 2 or CO / NH 3 etc.) etc., etc., as the reactive gas to perform small-angle ion beam trimming on the sidewall of the magnetic tunnel junction after etching. Due t...

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Abstract

The invention provides a method for chemically assisted ion beam etching to optimize the magnetic tunnel junction after etching, and relates to the technical field of magnetic random access memory manufacturing. Since the chemically active gas in the method can react with the damaged / deposited layer to form an easy Volatile metal complexes, at the same time, the small-angle inert gas ion beam radiation can enhance the complexation reaction, which can effectively remove the damage / deposition layer covering the side wall, which is very beneficial to the magnetic and electrical performance of the magnetic random access memory. Lift and yield improvement.

Description

technical field [0001] The present invention relates to the technical field of magnetic random access memory (MRAM), in particular to a method for optimizing a magnetic tunnel junction, in particular to a method for optimizing a magnetic tunnel junction by chemically assisted ion beam etching (CAIBE, Chemically Assisted Ion Beam Etching). Background technique [0002] In recent years, Magnetic Random Access Memory (MRAM, Magnetic Radom Access Memory) using Magnetic Tunnel Junction (MTJ, Magnetic Tunnel Junction) is considered to be the future solid-state non-volatile memory, which has high-speed reading and writing, large capacity and low energy consumption. consumption characteristics. Ferromagnetic MTJ is usually a sandwich structure, which has a magnetic memory layer, which can change the magnetization direction to record different data; an insulating tunnel barrier layer in the middle; a magnetic reference layer, located on the other side of the tunnel barrier layer, whi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/12
CPCH10N50/01
Inventor 张云森肖荣福
Owner SHANGHAI CIYU INFORMATION TECH CO LTD
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